量子阱結構 的英文怎麼說

中文拼音 [liángzijǐngjiēgòu]
量子阱結構 英文
mqw
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 結 : 結動詞（長出果實或種子） bear （fruit）; form （seed）
  • 構 : Ⅰ動詞1 （構造; 組合） construct; form; compose 2 （結成） fabricate; make up 3 （建造; 架屋） bui...
  • 量子 : quantum; gion
  • 結構 : 1 （各組成部分的搭配形式） structure; composition; construction; formation; constitution; fabric;...
  1. Numerical study of voltage - current characteristics in a three - quantum - well superlattice unit

    三量子阱超晶格單元結構電流特性的數值研究
  2. Effect of structural parameters on current - voltage characteristics in a three - quantum - well superlattice unit

    結構參數對三量子阱超晶格單元結構伏安特性的影響
  3. We have grown ingaas / algaas strained quantum well laser by mbe. we studied the doped density in the cladding layer

    採用分子束外延設備mbe （ molecularbeamepitaxy ）對所設計的應變量子阱結構激光器進行晶體生長。
  4. The ingaas / gaas strained quantum well lasers are able to work with extremely low threshold current density, high characteristic temperature and high cod limit, which make ld lasers achieve higher output power and longer ufe. therefore, ingaas / gaas strained quartum wellstructures can be used for the fabrication of high power semiconductor lasers

    Ingaas / gaas應變量子阱激光器具有級低的閾值電流密度、較高的特性溫度和較高的光學災變損傷閾值，這使得激光器具有更高的輸出功率和更長的壽命。因此ingaas / gaas應變量子阱結構可以用於大功率半導體激光器的制備。
  5. 3. we have analyzed the single layer material, quantum well material and material comprise of superlattice by using kinematics and dynamics in a comparative way

    3 .對單外延層結構材料、量子阱結構材料、含超晶格結構材料等，分別應用動力學理論和運動學理論作了對比分析。
  6. The wavelength of pump light in white light mode is 400nm. 2. the excitonic tunneling from cdznse qw to cdse quantum dots under resonant excitation was investigated using femtosecond pump - probe technology on the cdznse quantum well / cdse quantum dots structure

    用飛秒脈沖泵浦-探測方法研究了cdse量子點znse cdznse量子阱結構在對cdznse量子阱的激子共振激發條件下激子在量子阱與量子點之間的隧穿。
  7. In the present thesis, znse, znte and their quantum well ( qw ) structures on si substrates with zno as buffer layer by low pressure metal - organic chemical vapor deposition ( lp - mocvd ) technique were prepared. zno is selected as the buffer layer for it has many similarities with the oxide layer on the surface of si wafer. all important experimental results and conclusions presented in this thesis are summarized as follows : 1

    本文中，我們利用zno與si襯底上氧化層? sio _ x有很好的浸潤性這一特點，採用zno作為緩沖層，用低壓-金屬有機物氣相沉積（ lp - mocvd ）設備在si襯底上生長znse和znte薄膜以及zncdse znse和zncdte znte量子阱結構，並對其發光特性進行了研究，獲得的主要研究結果如下： 1 、在si襯底上獲得了較高質量的zno薄膜。
  8. According to the raman selection rule and the pl measurement, it is reasonable to evaluate the quality of galnp / algalnp mqw by analyzing the relative intensity ratio of a1p - lo / to. ( 4 ) a new modified random element isodisplacement ( mrei ) model is set up to calculate the dependence between the long - wavelength optical phonon frequencies and the composition of iii - v - type ab1 - xcx mixed crystals. the second neighbor force constants are still assumed to be a linear variation with the composition, but the two first neighbor force constants can be evaluated to be a negative exponent variation with the composition, using the overlapped repulsive potential of the ion crystal combination

    通過實驗我們找到了在這些結構參數上生產gainp algainpmqw的較理想的結果； （ 3 ）首次用喇曼（ raman ）散射方法研究了常溫下的gainp algainp多量子阱結構，除了指認出喇曼光譜中各光學聲子模外，還結合樣品光致發光譜的測量結果，分析發現喇曼光譜中alp - lo to的相對強度比可以在一定程度上評定晶體gainp algainpmqw的生長質量； （ 4 ）在修正的隨機元素等位移? mrei模型的基礎上建立了一個新模型，計算了ab _ （ 1 - x ） c _ x型?族半導體混晶的長波長光學聲子模頻率的組分變化關系。
  9. 7. the effect of the mqw on the hb - led is analyzed

    全面分析多量子阱結構（ mqw ）在hb - led中的重要作用。
  10. The second - order nonlinear susceptibility in semiconductor asymmetric step quantum well structure

    半導體非對稱階梯量子阱結構的二階非線性極化率
  11. It demonstrates that this structure shows large birefringence that needs more consideration

    與此同時，本論文還分析了該量子阱結構的吸收特性。
  12. Research on energy level properties of symmetric coupled quantum well and optimization for quantum well structures

    對稱耦合量子阱能級特性研究與量子阱結構優化
  13. The surface of zncdse / znse qw grown on zno buffered si substrate is free of micro - cracks that is observed on the surface of the sample deposited directly on si substrate

    Zncdte znte量子阱結構的表面沒有微裂紋，其發光強度較直接在si襯底上生長的zncdte znte量子阱有很大提高。
  14. The lifetime and mechanics of pl are researched by fl920 time resolved measurement system. it indicated that pl lifetime of quantum dots is greater than those of bulk material and quantum well

    利用fl920時間分辨譜測試系統研究了量子點的發光緣由及壽命，發現量子點的發光壽命大於體材料及量子阱結構材料，並且受溫度影響較小
  15. In this dissertation, a novel m - z high speed modulator is proposed, analyzed, fabricated and measured, employing multiple quantum well ( mqw ) structures and traveling wave ( tw ) electrodes to meet the demand of low voltage and wide bandwidth

    本論文採用行波量子阱結構來設計40ghz的電光調制器。為實現高帶寬，低驅動的要求，本論文著重在量子阱的光學特性和器件的微波特性兩個方面進行了深入的研究。
  16. Hydrogenic impurities in low dimensional semiconductor structures have been studied extensively. electric field applied perpendicularly to the layer of quantum wells can change the optical properties ( abstraction, reflection and photoluminesce - nce ) of semiconductor quantum well structures

    而在垂直於量子阱平面的方向外加電場可以顯著的改變半導體量子阱結構的光學性質（如吸收、反射、光致發光等） 。
  17. The effect of an applied electric field on the binding energy of shallow donor impurities in rectangular cross section gaas qwws was presented by montes et al, by considering an infinite confinement potential and using a variational scheme

    外加電場對矩形量子阱線中淺施主雜質束縛能的效應是由montes等人提出的，他們採用變分法討論了無限深勢阱的量子線結構。
  18. The performance of modulators employing mqw is governed by the quantum confined stark effect. in order to simplify the analysis of mqw, we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states. then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator

    本論文首先根據量子限制stark效應，發展了等效寬度思想，提出了把單量子阱結構的有限深勢阱的分析轉化為無限深勢阱模型的顯式公式，從而大大簡化了電場下量子阱結構的分析；接著利用轉移矩陣，把周期性的量子阱結構簡化為三層結構，得到了實際採用的非對稱三阱結構量子阱的場分佈，並討論了量子阱結構的偏振特性。
  19. 4. photolumescence and micro - photoluminscence of cdznse qw / znse / cdse qds with different znse barrier thickness was studied to investigate the influence of tunneling on excitonic combination in quantum well and quantum dots. we studied the temperature dependent of the excitonic recombination

    通過cdse量子點znse cdznse量子阱結構在不同壘層厚度情況下的發射譜和變溫激子發射譜，研究了激子隧穿過程對量子點和量子阱中激子復合的影響。
  20. For being with many advantages, it has been an active subject in recent years and much progress has been made. on the basic of analysis of many kinds of led structures, a new kind of strained layer structure has been introduced into our designed hb - led which has been manufactured in our laboratory to demonstrate a even higher efficient light emission. through calculation of led external quantum efficiency, a method for design hb - led top layer was evaluated

    本論文分析了當前國內外各種led的結構及其製作工藝，在技術上較為成熟的雙異質結構基礎上，我們在器件的有源區引入應變多量子阱結構，並根據實際需求增加補償應變技術以保證發光層結構的穩定性；通過對器件外量子效率的計算，使得在器件設計有了定量的理論分析依據；並採用先進的渦輪lp - mocvd成功制備出galnp gaalinp應變多量子阱高亮度發光二極體器件。
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