金剛石型構造 的英文怎麼說

中文拼音 [jīngāngdànxínggòuzào]
金剛石型構造 英文
diamond type structure
  • : Ⅰ名詞1 (金屬) metals 2 (錢) money 3 (古時金屬制的打擊樂器) ancient metal percussion instrum...
  • : 石量詞(容量單位, 十斗為一石) dan, a unit of dry measure for grain (= l00 sheng)
  • : Ⅰ動詞1 (構造; 組合) construct; form; compose 2 (結成) fabricate; make up 3 (建造; 架屋) bui...
  • : Ⅰ動詞1 (做; 製作) make; build; create; produce 2 (假編) cook up; fabricate; concoct 3 [書面語...
  • 金剛石 : diamond; adamas; carbite; adamant; spark金剛石材料 diamond; 金剛石產地 diamond field; 金剛石結構 ...
  • 金剛 : (佛的侍從力士) buddha's warrior attendant
  • 構造 : structure; construction; constructional detail; tectonic; structural; makeup; anatomy; constituti...
  1. Analyses for valence electron structures on the faces of synthetic diamond crystal and fe3c type carbides

    碳化物與人晶面價電子結分析
  2. Using the microwave selective heating property for materials, by setup equivalent equation, and first time inducing the electromagnetic field perturbation theory to the design of heating materials for substrate in mpcvd, three temperature distribution modes were established, including temperature distribution comprehensive mode of inhomogeneous plasma, temperature distribution composite mode of composite substrate materials, temperature distribution perturbation mode of composite materials, which ii provided an whole new technology route to the design of substrate heating system in mpcvd and guided the preparation of heating materials for substrate. and then the heating materials for substrate were designed and optimized to obtain large area homogeneous temperature distribution even larger than substrate holder ' s diameter. as an important part, this thesis researched the nucleation and growth of diamond films in mpcvd, systematically researched the effects of substrate pretreatment, methane concentration, deposition pressure and substrate temperature etc experimental technologic parameters on diamond films " quality on ( 100 ) single crystal silicon substrate in the process of mpcvd, characterized the films qualities in laser raman spectra ( raman ), x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), infrared transmission spectra ( ir ), atomic force microscopy ( afm ), determined the optimum parameters for mpcvd high quality diamond in the mpcvd - 4 mode system

    該系統可通過沉積參數的精確控制,以控制沉積過程,減少膜生長過程中的缺陷,並採用光纖光譜儀檢測分析等離子體的可見光光譜以監測微波等離體化學氣相沉積過程;利用微波對材料的選擇加熱特性,通過等效方程,並首次將電磁場攝動理論引入到mpcvd的基片加熱材料的設計中,建立了非均勻等離子體溫度場綜合模、復合介質基片材料的復合溫度場模及復合介質材料溫度場攝動模,為mpcvd的基片加熱系統設計提供了一條全新的技術路線以指導基片加熱材料的制備,並對基片加熱材料進行了設計和優選,以獲取大面積均勻的溫度場區,甚至獲得大於基片臺尺寸的均勻溫度區;作為研究重點之一,開展了微波等離體化學氣相沉積的成核與生長研究,系統地研究了在( 100 )單晶硅基片上mpcvd沉積膜的實驗過程中,基片預處理、甲烷濃度、沉積氣壓、基體溫度等不同實驗工藝參數對薄膜質量的影響,分別用raman光譜、 x射線衍射( xrd ) 、掃描電鏡( sem ) 、紅外透射光譜( ir ) 、原子力顯微鏡( afm )對薄膜進行了表徵,確立了該系統上mpcvd膜的最佳的實驗工藝參數。
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