金屬互化物 的英文怎麼說
中文拼音 [jīnzhǔhùhuàwù]
金屬互化物
英文
interllics-
The imported transparent glaze fired at lower temperature was analysed semi - quantitatively by adopting emission spectroscope. the stripping of lead and cadmium from this transparent glaze fired at lower temperature in ceramic product was determined by atomic absorption spectroscope. the effect of chemical composition on the stripping of lead and cadmium was analysed. upon the author s opinion, the overproof lead stripping from the imported transparent glaze fired at lower temperature can only be settled by adopting lead - free glaze instead of adopting low - lead prescription. the author succeeded in developing an excellent lead - free transparent glaze fired at the lower temperature of 1000 1050. the success is based on an inquiry into the feasibility of using such new agents of fusion as li2o and sro in replacement of pbo ; and on a study of the effects of the contents of sio2 ， al2o3 ， b2o3and other metallic oxides on such performances of glaze as coefficient of linear expansion, fusion temperature and transparency. it is also based on an analysis of coefficient of linear expansion of blank and glaze on an analysis of coefficient of linear expansion of blank and glaze on their correlation ; and on a study of technology for preparing glaze
採用發射光譜儀對進口低溫透明釉進行半定量分析，並用原子吸收光譜儀測定其陶瓷製品的鉛、鎘的溶出量，分析化學成分對鉛、鎘溶出量的影響.結果表明，進口低溫透明釉採用低鉛配方不能解決鉛溶出量的超標問題，只有採用無鉛釉才能解決.探討用氧化鋰和氧化鍶等新型熔劑完全代替氧化鉛的工藝，研究釉料中氧化硅、氧化鋁、氧化硼和各種金屬氧化物的含量，對釉的線膨脹系數、熔融溫度和透明度等性能的影響.分析坯料、釉料的線膨脹系數及其相互關系和釉料制備的工藝，研製出優質的1000 1050低溫無鉛透明釉This paper gives a brief review of four stabilization mechanisms of soc : ( 1 ) recalcitrance of organic carbon compounds, ( 2 ) interactions with metal oxides and soil mineral surfaces, ( 3 ) spatial inaccessibility against decomposers because of micro - aggregate ' s physical protection, and ( 4 ) biological mechanisms, mainly the direct contributions of soil organisms themselves
土壤有機碳的穩定機制主要包括： （ 1 ）有機碳的難降解性； （ 2 ）金屬氧化物和粘土礦物與有機碳的相互作用； （ 3 ）土壤團聚體的物理保護導致的生物與有機碳空間隔離； （ 4 ）土壤生物學機制，主要指土壤生物自身對有機碳穩定性的直接貢獻。Complementary mos integrated circuit comos - ic
互補金屬氧化物半導體集成電路Complementary mos integrated circuit comos - i
互補金屬氧化物半導體集成電路The simplest way of making intermetallic compounds ? by just melting the elements together ? was not possible in this case, because the two elements have very different melting points : 650 degrees c for magnesium and higher than 2, 000 degrees c for boron
製造金屬互化物最簡單的方法，就是將組成元素一起熔化，但是這種方法在這里卻不適用，因為這兩種元素的熔點相差太多：鎂的熔點是650 ，而硼的熔點則超過2000 。Complementary symmetry metal oxide semiconductor
互補對稱金屬氧化物半導體Complementary metaloxide semiconductor random access memory
計算機的互補金屬氧化物半導體隨機存取存儲器Because there are many kinds of matrixes in titanium matrix composite, we select some typical ones as investigated subject in many titanium alloys or titanium aluminide intermetallics, and then simulate the distribution of thermal residual stresses under the appropriate composites fabrication and heat treatment parameter. we not only hope to seek better titanium matrix, but also discover the relationship between the material properties and the thermal residual stresses, and then provide some theoretical guidance for the selection of the matrix in titanium matrix composites
鑒于當前鈦基復合材料中鈦基體的多樣性，我們將在各種類型的鈦合金和鈦鋁金屬間化合物中，挑選出較為典型的作為研究對象，利用本文得到的較為理想的復合材料加工和熱處理工藝參數，逐一模擬它們的殘余熱應力，找到殘余熱應力分佈較為理想的鈦基體，並且，希望能夠尋找到材料性能與熱殘余應力的相互關系，為鈦基復合材料基體的選擇提供一定的理論指導。This thesis studies the interaction of dna with some metal schiff - base complexes with fluorescence spectra, the model of the interaction were investigated in details, and two specific anticancer drugs were obtained. the detailed materials are shown as follows : this first part : renewable amperometric imn ~ iunosensors have been developed with paraffin as carrier
在本論文中，我們採用熒光光譜法研究了一些席夫堿類金屬配合物傳感載體與dna的相互作用，對其相互作用模式作了詳細的探討，篩選出二種與dna有強烈相互作用的化合物。Since the copper red glaze material contained other oxidised metal materials, changes occurred in the kiln, and various glaze colours, merged to form accidental suffused glazing
因銅紅釉料中混雜其他金屬氧化物，在窯內發生變化，多種釉色相互交融，形成窯變花釉。Complementary metal oxide semiconductor random access memory
互補金屬氧化物半導體隨機存儲器The entire process of building a sound chip is fully compatible with the standard industry process for semiconductor manufacturing, called complementary metal oxide semiconductor, or cmos
聲音晶片的全部製程，是完全相容於互補式金屬氧化物半導體（ cmos ）的工業標準製程。It was found that the interfacial bonding of 93w - ofc was both the joining action of ofc / w grains and that of ofc / ni - fe binders, whereas the joining of ofc to tc4 could be seen as the mutual intense diffusion effect between ofc / tc4 and as a result cu - ti intermetallic compounds were formed at the joint. the joining of tc4 - a1 and a1 - mb2 were also attributed to the result of diffusion between elements ti - al and al - mg respectively. on the other hand, residual thermal stress and stress - induced distortion were produced at the joint simultaneously due to the difference in thermal expansion coefficient of different welding " materials
研究表明， 93w與ofc的界面連接是ofc與93w中w晶粒的連接以及ofc與93w中ni - fe粘接劑的連接共同作用的結果； ofc與tc _ 4連接界面的形成是由於ofc與tc _ 4之間發生反應擴散，並由此在二者接頭處生成了cu - ti金屬間化合物的中間相； tc _ 4 - al的連接與al - mb _ 2的連接則分別是其基體元素ti 、 al之間和al 、 mg之間元素互擴散的結果，另外，由於熱膨脹系數的差異，擴散焊接后在不同焊件的接頭處存在殘余熱應力並由此引起接頭的形變。Cmos delay and power calculation standards - part 2 : pre - layout delay calculation specification for cmos asic libraries
延遲計算和功率計算標準.第2部分:互補金屬氧化物半導體Hcmos specification for harmonized system of quality assessment for electronic components - semiconductor devices - integrated circuits - blank detail specification - hcmos digital integrated circuits series 54 74 hc, 54 74 hct, 54 74 hcu
電子元器件質量評估協調體系.半導體器件.集成電路.空白詳細規范. 54 74hc 54 74hct 54 74hcu系列的高密度互補金屬氧化物半導體The agreement includes complementary metal oxide semiconductor ( cmos ) and silicon - on - insulator ( soi ) technologies as well as advanced semiconductor research and design enablement transitioning at the 45 - nanometer generation
該協議包括互補金屬氧化物半導體（ cmos ）以及絕緣矽片（ soi ）技術以及轉向45納米級別高端半導體的研究和設計。Well, cmos complementary metal - oxide semiconductor chips use metal - oxide semiconductor field effect transistors mosfets. these are fundamentally different from bipolar transistors
哦， cmos （互補金屬氧化物半導體）晶元使用金屬氧化物半導體場效應晶體管（ mosfet ） ，顯然它是一種fei （場效應晶體管） 。Complementary symmetry mos array
互補對稱金屬氧化物半導體陣列Cmos complemeruary metoll oxide semiconductor
互補金屬氧化物半導體Cmos : complementary metal oxide semiconductor
互補金屬氧化物半導體分享友人