銅互連 的英文怎麼說

中文拼音 [tónglián]
銅互連 英文
copper interconnect
  • : 名詞(金屬元素) copper (cu)
  • : 代詞(相互;彼此) each other; mutual
  • : Ⅰ動詞1 (連接) link; join; connect 2 (連累) involve (in trouble); implicate 3 [方言] (縫) ...
  1. Materials for interconnection structures. part 7 : sectional specification set for restraining core materials. section 1 : copper invar coper

    結構用材料.第7部分:限制芯材料用分規范集.第1節:殷鋼
  2. The results indicate the stress of copper interconnects generates in the metallization and the thermal stress caused by thermal mismatch during the damascene process is the main stress. the thermal stress distribution in copper interconnects has been simulated by the finite element analysis software with the different trench structures

    對測量結果的分析得出金屬薄膜的淀積是造成銅互連線中應力的主要原因,熱應力在銅互連線應力中占較大比例,熱處理后銅互連線中應力減小。
  3. Materials for interconnection structures - sectional specification set for restraining core materials - copper invar copper

    接裝置用材料.第7部分:芯約束用材料分規范.第1節:殷鋼
  4. Materials for interconnection structures - part 7 : sectional specification set for restraining core materials - section 1 : copper invar copper

    接裝置用材料.第7部分:芯約束用材料分規范.第1節:殷鋼
  5. The snam results of local stress distribution are in close agreement with the results of computer simulation

    利用計算機模擬了溫度場變化引起的銅互連線中熱應力分佈。
  6. Studies on the stress of copper interconnects include the stress measurement by xrd, computer simulation and observation the local stress distribution with snam

    利用薄膜應力測試分佈儀和xrd測量硅基膜及銅互連線薄膜宏觀應力。
  7. Materials for printed boards and other interconnecting structures - reinforced base materials, clad and unclad - phenolic cellulose paper reinforced laminated sheets, economic grade, copper - clad

    印製板和其它結構用材料.包被和非包被增強基材.酚醛纖維素紙增強包被經濟級疊層板
  8. State - of - the - art of the on - chip copper interconnect technology for ulsi ' s

    集成電路片內銅互連技術的發展
  9. Copper interconnection system

    銅互連系統
  10. The main purpose of the article is to study the reliability of copper interconnection

    本論文研究了ulsi中銅互連的可靠性問題。
  11. Also, we simulated the electrical and mechanical characters of copper interconnection

    此外,還進行了銅互連的電學和力學模擬。
  12. In many issues of the reliability of copper interconnection, we place the emphasis on electromigration and stress migration

    銅互連可靠性的幾個主要問題中,重點針對中的電遷徙和應力遷徙進行了探討。
  13. The mechanical simulation compared the stress distribution in copper lines and pore, with the result that the maximum stress locates in the corner

    在力學模擬過程中,計算了銅互連線和通孔的熱應力的分佈。
  14. On the other hand, tddb experiments of copper interconnection have been taken to prove the performance improvement of interconnect by the use of low - k dielectric

    試驗方面則進行了銅互連線的tddb試驗,來驗證低k介質對性能的改善。
  15. In a word, this paper has made a common and deep analysis of interconnect delay and a whole depiction of improvement methods for interconnect delay

    總之,本文對ulsi銅互連延時進行了普遍和深入的分析,對改善延時的方法也進行了全面的闡述。
  16. Studies on the microstructure of copper interconnects include the determination of grain size by afm and sem, the measurement of texture by xrd and ebsd, the evaluation of barriers by xps and aes

    銅互連線的微觀結構的研究:通過afm 、 sem 、 tem等的分析方法對膜及銅互連線薄膜的晶粒尺寸進行了評價。
  17. Xrd analysis results reveal the electroplated copper film has strong cu { 111 } texture and cu { 111 } texture weakens after annealed. the cu { 111 } texture of copper film in trenches is obviously weaker than that of the blanket copper film

    在沉積態膜存在較強的{ 111 }織構,熱處理以後膜的織構減弱,銅互連線溝槽中{ 111 }織構要弱於膜的{ 111 }織構。
  18. The results show the grain size becomes larger along with elevated temperature and the grain size in interconnects does not change evidently after annealed at 200 ? because of the effect of the trench structure

    結果顯示熱處理后膜晶粒長大,但銅互連線薄膜由於溝槽結構對晶粒的長大有阻礙作用。利用xrd和ebsd測試方法對膜及銅互連線薄膜的織構進行評價。
  19. In this thesis, focusing on the copper diffusion failure of copper interconnects in the ulsi, such as electromigration, stressmigration and copper diffusing into silicon dioxide and silicon, the microstructure and the stress of copper interconnects in ulsi have been studied systemically

    本論文從ulsi銅互連技術可靠性研究中的擴散失效問題出發,針對電徙動失效、應力遷移失效、層間擴散失效問題,對銅互連線的微觀結構和應力進行了研究。
  20. Through the electromigration experiment, the electromigration resistance of copper interconnection with different width was compared, its mtf and activated energy was calculated, and the failure mechanism was explored. then, difference between copper interconnection and aluminum interconnection was studied

    通過電徙動試驗,研究比較了不同寬度的銅互連線的抗電遷徙能力,計算了其中值壽命和激活能,探討了其失效機理,並與鋁線進行了比較。
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