鍵合硅 的英文怎麼說

中文拼音 [jiàngěguī]
鍵合硅 英文
bonded silica
  • 鍵 : 名詞1 [機械工程] （使軸與齒輪、皮帶輪等連接並固定在一起的零件） key 2 [書面語] （插門的金屬棍子）...
  • 合 : 合量詞（容量單位） ge, a unit of dry measure for grain （=1 decilitre）
  • 硅 : 名詞[化學] silicon （14號元素符號 si）
  1. By using laser light scattering ( lls ) and scanning electron microscopy ( sem ), the particle sizes of ultrafine silicon dioxide diminish and the congeries dispersibility were obviously improved, which shows that the hydrophobic property of ultrafine silicon dioxide after being modified has been much more strengthened, this surface modification provides wide market to reuse ultrafine silicon dioxide waste material

    表明超細二氧化硅顆粒表面鍵合了疏水性有機分子鏈，蔬水性增強，達到了改性目的，為超細二氧化硅廢料的回收利用提供了廣闊的市場。
  2. The results indicate that in niobate glasses, as the concentration of nb2o5 increases, the covalence becomes strong, the symmetry becomes low and the electron - phonon coupling becomes strong, thus the lifetimes become short, the nonradiative transition processes and the temperature - quenching become strong and the value of crystal field parameter b20 becomes small

    （ 6 ）研究了妮硅與妮磷系列玻璃發光特性與組份的關系，發現隨著nbzos濃度的增加， eu一o鍵共價性增強，局域環境對稱性降低，電一聲子禍合增強從而導致sd 。
  3. The pertinent siloxane compounds contain two silicon hydride bonds.

    所說的硅氧烷組合物中，含有兩類硅氧鍵。
  4. The secret of preparing mold spray seems to lie in the thorough incorporation of the dilute silicate solution in the granules of cork.

    制備脫模劑的關鍵似乎在於稀的硅酸鈉溶液與軟木粉的顆粒徹底混合。
  5. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  6. Then the key process parameters of laser bonding, including laser power, scanning velocity, and initial temperature, are obtained with the help of scanning experiments

    運用該模型計算了不同的工藝參數條件下硅玻璃的溫度場分佈，並由此得出鍵合線寬。
  7. Research advances in lasers bonded on silicon substrates

    硅基鍵合激光器的研究進展
  8. The three dimensional temperature distribution of laser bonding with a gaussian thermal source is modeled using the finite element method

    摘要在硅玻璃激光鍵合中，溫度場的分佈是影響晶片能否鍵合的關鍵因素。
  9. Performance for a piezoresistive transducer pressure sensor to thermal and pressure environments can be predicted by finite element method. a simplified 1 / 8 model, considering silicon dioxide and nitride process as well as stack anodic bonding and adhesive bonding processes, was developed. the fem results were found to be comparable to experimental data. case studies suggested that pyrex stack induces certain amount of non - linearity, while it isolates hard epoxy nonlinear effect. flexible epoxy bonding or soft adhesive bonding is preferred to the packaging process. the viscoelasticity and viscoplasticity of bonding material will result in hysteresis and drift errors to sensor output. however, soft adhesive s influence on sensor can be ignored under relative stable environments. more over, detailed design and process information will help to improve modeling application

    熱、壓環境下壓阻變換壓力傳感器的性能可以通過有限元方法預測.這里研究了簡化的1 / 8模型，模型考慮了二氧化硅和氮化硅生成過程及堆陽極鍵合和膠粘結合過程.結果發現有限元預測結果和實驗數據具有可比性.範例研究表明，硼硅堆導致產生一定的非線性，但它隔離了硬環氧樹脂的非線性.在包裝過程中最好使用柔性環氧黏合或軟黏膠性結合.黏合材料的黏彈性和黏塑性將會導致傳感器輸出的滯后和漂移誤差.然而，在相對穩定的環境下，軟黏合劑對傳感器的影響可以忽略.此外，詳細的設計和過程信息有助於提高模型的適用性
  10. Synthesis of dithiotricyanic acid immobilized silica gel and its application to the faas determination of gold after on - line preconcentration and separation

    二巰基取代三聚氰酸鍵合硅膠的合成及其在金的在線預濃集分離火焰原子吸收光譜分析中的應用
  11. Chromatographic column : the most commonly used filler of chromatographic column is chemically bonded silica gel

    色譜柱最常用的色譜柱填充劑為化學鍵合硅膠。
  12. Nonpolar filler are used in reversed phase chromatographic system, of which, octadecylsilane chemically bonded silica is most commonly used, sometimes, octyl chemically bonded silica and other types of chemically bonded silica ( such as cyano chemically bonded phase and amino chemically bonded phase, etc ) are also used as well

    反相色譜系統使用非極性填充劑，以十八烷基硅烷鍵合硅膠最為常用，辛基硅烷鍵合硅膠和其他類型的硅烷鍵合硅膠（如氰基硅烷鍵合相和氨基硅烷鍵合相等）也有使用。
  13. To hydrogenated amorphous silicon ( a - si : h ), however, it has much less defects than non - hydrogenated a - si, for the sake of much hydrogen which eliminate the defects by making a bond with non - connected si bond. with these virtue, a - si : h accord with device quality. the films of a - si : h have widely used in solar cell, film transistor and flat display

    對于氫化非晶硅（ a - si : h ） ，由於氫通過無連接端的硅原子鍵合來消除缺陷，使得氫化非晶硅的缺陷密度比未氫化的非晶硅大大降低了，從而使氫化非晶硅符合器件級質量材料的要求。
  14. The fourier transform infrared ( ftir ) spectrum is an effective technology for studying the hydrogen content ( ch ) and the silicon - hydrogen bonding configuration ( si - hn ) of hudrogenated amorphous silicon ( a - si : h ) films. in the paper, ch and si - hn of a - si : h films, fabricated at different ratio of h2 / sih4 by microwave electron cyclotron resonance plasma chemical vapor ( wmecr cvd ) method, have been obtained by analyzing their ftir spectra that are treated by baseline fitting and gaussian function fitting. the effects of ratio of h2 / sih4 on ch and si - hn are studied

    Fourier紅外透射（ ftir ）譜是研究氫化非晶硅（ a - si : h ）薄膜中氫含量（ c _ h ）及硅-氫鍵合模式（ si - h _ n ）最有效的手段，對于微波等離子體化學氣相沉積（ mwecrcvd ）方法在不同h _ 2 sih _ 4稀釋比下制備出的氫化非晶硅薄膜，我們通過紅外透射光譜的基線擬合、高斯擬合分析，得出了薄膜中的氫含量，硅氫鍵合方式及其組分，並分析了這些參數隨h _ 2 sih _ 4稀釋比變化的規律。
  15. For example, the silicon is etched anisotropically in the koh solution, the lucent al film is made with the magnetron sputtering system, the pressure hole is drilled by the supersonic stiletto machine and the silicon and the glass are bonded with electrostatic bonding setup

    例如， koh溶液對硅的各向異性腐蝕，磁控濺射臺製作光亮的鋁膜，超聲打孔機製作導壓孔，靜電鍵合裝置對硅島膜與玻璃極板的陽極封接等等。
  16. Ftir and xps proved that ptcda and tcpc were attached on the surface of silicon by covalent ; afm and uv - vis showed ptcda and tcpc arranged orderly on surface of silicon ; through raman spectrum, we found that macrocycle molecules stand on surface of silicon, while macrocycle molecules in film by vacuum deposition parallel to silicon surface

    紅外光譜和光電子能譜證明了?和酞菁成功的化學鍵合到單晶硅表面， afm和uv - vis吸收光譜表明了?和酞菁單層膜在硅基上呈有序排列。拉曼光譜的研究發現?酐分子大環以一定的角度立於硅基表面，而不是平行於基體表面，與蒸鍍手段得到的?酐膜的堆積形態完全不同。
  17. After optimizing the epitaixal condition, low temperature bonding, splitting and removing of porous silicon, soi material has been successfully fabricated for the first time in china with the epitaxial layer transfer of porous silicon ( eltran ) the eltran - soi has been characterized and the results indicate that the top si layer is perfect single crystal, and its thickness is uniform

    優化了外延條件，結合低溫鍵合與多孔硅的剝離技術，在國內首次用多孔硅外延層轉移技術成功地制備出了soi材料。分析表明， eltran - soi的頂層硅厚度均勻，單晶質量優良；界面清晰、陡直；電學特性優異。
  18. In the dissertation, a micromechanical comb capacitive accelerometer having u - shaped supporting beams is designed, simulated and fabricated on the base of the anodic bonding between the silicon and glass, and bulk silicon micromachining process

    而改用體硅微機械製作可以改善這些問題。本文設計、模擬並製作了一種基於硅一玻璃鍵合工藝的u型梁支撐的微機械電容式加速度計。
  19. In the model, the temperature distribution with different process parameters is simulated and the bondline width is obtained

    本文利用有限元法建立了移動高斯熱源作用下硅玻璃激光鍵合的三維溫度場數值分析模型。
  20. Based on silicon - piezoresistive method, the paper first gives the theory of array silicon piezoresistive pressure, acceleration sensor, and the design of its incorporated chip, microstructure and out - circuit. several key techniques of making array silicon piezoresistive pressure, acceleration sensor such as 1c technic, mems ( silicon - silicon direct bonding, anodic bonding, anisotropic etching ) is also studied. minuteness engine machining, anode bonding etc. in the paper there are three ways which are examine - form, curve simulanting, to carry out sensors non - linear self - emendating ; adopt the several curves approaching and curve simulating to achieve the aims of sensor error self compensation, fusion technology etc. therefore, it providing referenced values of ways and directions for sensor system directing on

    論文首先以硅壓阻效應原理為基礎，討論了陣列式硅壓力、加速度傳感器的設計原理，並對陣列式硅壓力、加速度傳感器中集成敏感晶元（壓力、加速度） 、總體結構和壓力陣列的信號處理電路進行了設計，在陣列式硅壓力、加速度傳感器的研製中，還研究了半導體平面工藝、大規模集成電路技術、微機械加工技術（硅硅鍵合、靜電封接、各向異性腐蝕）等關鍵技術的應用。
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