鐵電性晶體的英文怎麼說

中文拼音 [tiědiànxìngjīng]
鐵電性晶體英文
ferroelectric crystal

  • : Ⅰ名詞1 (金屬元素) iron (fe) 2 (指刀槍等) arms; weapon 3 (姓氏) a surname Ⅱ形容詞1 (形容...
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ名詞1 (性格) nature; character; disposition 2 (性能; 性質) property; quality 3 (性別) sex ...
  • : Ⅰ形容詞(光亮) brilliant; glittering Ⅱ名詞1. (水晶) quartz; (rock) crystal 2. (晶體) any crystalline substance
  • : 體構詞成分。
  • 晶體: [晶體學] crystal; vitrella; crystal body; crystalloid; x-tal

※中文詞彙鐵電性晶體在字典百科國語字典中的解釋。

  1. We have developed the theory of boundary shielding approximation of electric polarization, from which the values of spontaneous polarization of some typical ferroelectric materials can be derived. the shielded charges in ferroelectricity are in the state of surface bound polaron - dipole whose creation and annihilation must span a potential barrier. by introducing statistical method, four types of typical electric hysteresis loops of some common crystals and ceramics have been given, which are well consistent with the experimental results

    利用極化的邊界屏蔽近似,可計算出一些典型的自發極化強度.屏蔽荷處于表面束縛極化子偶狀態,其產生和湮沒要跨越位壘.由統計方法給出的一些常見和陶瓷的四種典型滯回線形狀,和實驗觀察到的結果一致
  2. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多硅/二氧化硅夾心深槽場限制環新結構來提高管的擊穿壓.模擬結果顯示,該結構可以使射頻功率雙極管的擊穿壓幾乎100達到平行平面結的理想值
  3. According to faraday law on electromagnetic induction and the difference of the magnetic energy of ferromagnetic materials in their magnetization and demagnetization, it is clarified that the swing, vibration and periodic translational reciprocation of any object made of ferromagnetic material in geomagnetic field must cause spontaneous magnetization of the object itself

    摘要依據法拉第磁感應定律和物質在磁化一退磁過程中的能量差異,闡明了在地磁場中的擺動、振動和周期往復平動都會引起該物的自發磁化。
  4. But its high leakage current and poor retention is the main obstacle to its application. improving the quality of ferroelectric thin films and avoiding the reaction and diffusion between f - s interfaces is one of the crucial keys to overcome this problem. that is to say that the preparation and properties of ferroelectric thin films is compatible with the semiconductor integrated circuit

    但是其漏流過大和保持力差成為制約其實用化的最大障礙,攻克這一難題的關鍵之一就在於薄膜質量的進一步提高,盡量減少或者避免f - s界面的互擴散,也就是說薄膜的制備工藝和各項能必須與半導集成工藝兼容。
  5. Growth techniques for lead - based relaxor ferroelectric crystals

    鉛基弛豫的生長技術
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