閉管擴散 的英文怎麼說

中文拼音 [bìguǎnkuòsǎn]
閉管擴散 英文
closed ampoult difiusion
  • 閉 : Ⅰ動詞1. （關; 合） close; shut 2. （堵塞不通） block up; obstruct; stop up Ⅱ名詞（姓氏） a surname
  • 管 : Ⅰ名詞1 （管子） pipe; tube 2 （吹奏的樂器） wind musical instrument 3 （形狀似管的電器件） valve;...
  • 擴 : 動詞（擴大） expand; enlarge; extend
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  1. The carbon dioxide laser facilitates resection by providing a bloodless field and reduces the possibility of viral seeding of the conjunctiva by sterilizing the operative site and sealing the lymphatics

    二氧化碳雷射有良好的止血作用，並對手術區域內完全滅菌，可封閉淋巴管以阻止病毒擴散，以利乳頭狀瘤之完全切除和預防其復發。
  2. Closed ampoule vacuum diffusion

    閉管真空擴散
  3. Laser induced diffusion is performed within a non - homogenous 4 - d temperature field, which is different with the normal closed - ampoule diffusion in a homogenous and steady temperature field

    與常規閉管擴散的均勻恆定溫度場不同，激光誘導擴散是在四維（ x ， y ， z ， t ）非均勻溫度場中進行。
  4. With the development of doping technology, the formation of the base region in high - voltage transistor can be made by b diffusion technology, b - a1 paste - layer diffusion technology, close - tube ga - diffusion technology and open - tube gallium - diffusion technology

    隨著摻雜工藝的不斷發展，高反壓晶體管基區的形成經歷了擴硼工藝、硼鋁塗層擴散工藝、閉管擴鎵工藝到開管擴鎵工藝的發展。
  5. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  6. It must be the ideal operation apparatus in surgical stomatology and ophthalmological department, e. n. t dermatological, gynaecolagical and brain surgical department

    可用作手術中封閉腫瘤組織血管淋巴腺減少流血，可有效防止腫瘤擴散和引起新腫瘤的可能性。
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