間隙缺陷 的英文怎麼說

中文拼音 [jiānxìquēxiàn]
間隙缺陷 英文
interstitial defect
  • 間 : 間Ⅰ名詞1 （中間） between; among 2 （一定的空間或時間里） with a definite time or space 3 （一間...
  • 隙 : 名詞1 （縫隙; 裂縫） crack; chink; crevice 2 （空閑） gap; interval 3 （漏洞; 機會） loophole; op...
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 間隙 : （空隙） interval; gap; freedom; space; [機械工程] clearance; separation; stricture; clear; inter...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. The annihilation of the octahedron voids at the tips of fpds was divided two processes : ( 1 ) the oxide on the void was removed by the out - diffusion of oi in the shallow region, especially the oi aroud the void and by the entry of the interstitial si atomics. ( 2 ) the void without oxide shrinked by emitting vacances and the migration of silicon atoms from edge to the bottom of void

    Fpds端部八面體空洞的消失分為兩個階段： （一）覆蓋在空洞各個內壁上的氧化膜由於高溫下矽片表面區域的間隙氧原子，尤其是空洞型缺陷周圍的間隙氧原子的外擴散及自間隙硅原子的進入，而逐漸變薄直至最終消失。 （二）無氧化膜的空洞，在高溫下發出一個個空位，同時八面體空洞周圍的自間隙硅原子不斷的從空洞的邊緣遷移至空洞的底部，使空洞逐漸變淺直至最後消失。
  2. Moreover, the octahedron voids would change to shallow orbicular pits and vanished at last if the etching time was prolonged. our results were contrasted to the result that the fpds are interstitial type defects concluded by takeno et al and support the views that the fpds are vacancy - type defects

    本次的實驗結果與takenold等人對fpds的研究結果大大相反，他們認為fpds的端部是一些間隙型的位錯環，而本實驗的實驗結果卻支持了fpd缺陷屬空位型缺陷的觀點。
  3. Slight displacements of atoms relative to their normal lattice positions, normally imposed by crystalline defects such as dislocations, and interstitial and impurity atoms

    原子相對於它們正常點陣位置的輕微位移，通常是由晶體的缺陷，如位錯、間隙原子、雜質原子存在引起的。
  4. The main results are : grinding is favorable to improve surface smooth degree, while nitrided and slow deposition makes sic granules fine ; the width of coatings gap increased in order of grinding, nitrided and vacuum heat treatment, but gap defects in multilayer coatings could be removed by slow deposition ; temperature of maximum weight loss could be decrease to 600 by grinding, vacuum heat treatment or slow deposition, but it will increased to 800 after nitrided ; oxidation kinetics curves all varied with the coating modifications

    主要有：磨削改性有利於提高塗層表面平整度，氮化和慢沉積使塗層表面顆粒細化。塗層間隙寬度按磨削改性、高溫氮化、真空熱處理依次增大，而慢沉積可獲得無面缺陷的多層塗層。磨削改性、真空熱處理及慢沉積均使最大氧化失重溫度點提前至600 ，而高溫氮化則使最大失重點后移至800 。
  5. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  6. But its biggest deficiency lies in the existence of cracks between different billboards

    Billboardclouds方法最大的缺陷是不同billboard之間縫隙的存在。
  7. In te - rich cdte crystals, at high temperature cd vacancies were the dominant point defects, while at low temperature the concentrations of te anti - sites, te interstitials and cd vacancies were all very high

    富te的cdte晶體中，高溫下，晶內多餘te形成的原子缺陷主要是cd空位。低溫下，則晶內te反位原子、 te間隙原子和cd空位的濃度都很高。
  8. In the theoretical simulation on the behavior of single helium atom in aluminum, the varieties of energy data including the formation, migration, binding, and dissociation energies for single helium atom at the interstitial, vacancy, grain boundary, and dislocation sites in aluminum lattice were calculated, based on the density functional theories, general gradient approximation and pseudopotential plane wave method. results showed that the most fittable sites for containing helium atoms inside the cell are vacancies. but in the view of the whole lattice, grain boundaries are the best

    計算結果表明，晶內he原子擇優佔位區是空位，而在整個晶體范圍，最有利於容納he原子的區域是晶界，位錯容納he原子的能力次於晶界和空位；在fcc -鋁的間隙位中， he原子優先充填四面體間隙位；晶內間隙he原子是可動的，通過間隙he原子的運動，可在晶內聚集，或被空位、晶界、位錯等缺陷束縛。
  9. A new type of double - acting contactless sliding - vane pump was put forward to the defect analyzed on sliding - vane, which uses roller to control the locus of sliding vane to insure the minute gap between the stator and sliding vane

    摘要通過分析滑片泵存在的缺陷，提出了一種利用滾柱控制滑片運動軌跡，使滑片與定子內表面保持微小間隙的新型雙作用無接觸滑片泵。
  10. When two same defects are introduced into the structure, the defect modes, no matter in the bragg gap or the zari gap, reveal degeneracy and split as the interval between the two defects decrease, due to the coupling of the two defects. the split of defect mode doesn ’ t appear when two different kinds of defects are introduced. furtherlly, the transmission of 1d ternary photonic crystal containing lhm is also investigated with the help of tmm

    引入兩個缺陷之後，當缺陷相同時，缺陷間的相互作用與它們的間隔成反比，當缺陷間隔比較大時，相互作用比較小，其缺陷模是簡並的;隨著間隔的減小，相互作用變大，簡並的缺陷模將發生分裂，間隔越小分裂越明顯，而且這種現象與缺陷模所處帶隙以及結構本身的構成無關。
  11. After annealing at 600, because of formation of multi - vacancy - type defects that have long positron lifetime, positron annihilation average lifetime increased. when the average positron lifetime increased to maximum value ( 360ps ), the interstitial oxygen concentration decreased to minimum value ( 4 1017atoms / cm3 ). this result suggested that oxygen was involved in the formation of multi - vacancy - type defects

    正電子湮沒技術測試證明，快中子輻照直拉硅中在大約600退火時產生的多空位缺陷具有較長正電子壽命，可以使正電子平均壽命增加，當樣品的正電子平均壽命達到最大時（ 360ps ） ，其間隙氧含量降到一個極小值（ 4 10 ~ （ 17 ） atoms / cm ~ 3 ） ，這說明氧參與了這些缺陷的形成。
  12. At temperature lower than 1300k, atomic defects formed by excess cd mainly existed as ionized cd interstitials

    溫度低於1300k時，多餘cd形成的原子缺陷則主要是電離的cd間隙原子。
  13. It was showed that, in cd - rich cdte crystals, atomic defects formed by the excess cd mainly existed as cd interstitials

    計算結果表明，富cd的cdte晶體內，多餘cd原子缺陷主要以cd間隙原子的形式存在。
  14. The analyses of the microstructures as well as the characterizations of microcracks, deposition defects and residual pores of 3d c / sic composites have been done to determine the main diffusion channels of oxygen into the composites at different temperature domains. 2

    對3dc sic復合材料的顯微結構進行了表徵，對材料中的各種微裂紋、缺陷和孔隙進行了分析，研究了不同溫度區間內氧化性氣體在復合材料中的主要氣相擴散通道。
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