阻容器件 的英文怎麼說

中文拼音 [zǔróngqìjiàn]
阻容器件 英文
rescaparts
  • 阻 : 動詞（阻擋; 阻礙） block; hinder; impede; obstruct
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  1. The combined toy as right request 3 stated, whose character is : the electronic components electrically or electromagnetically connected with the iron stick or the magnet stick can be resistor, capacitor, inductor, battery, switch, diode, audion, ic ( integrated circuit ), motor, led ( light - emitting diode ), infrared ray receiver, sound circuit and instrument

    如權利要求3所述的組合玩具，其特徵是：和鐵棒或磁鐵棒電連接的電子元器件是可以是電阻、電容、電感、電池、開關、二極體、三極體、集成電路、馬達、發光二極體、紅外線接受器、發聲電路、儀表。
  2. In this paper, the design of a practical sort of high performance biquadrates elliptic active band - pass filters is emphasized, and then the design techniques and how to calculate the resistors and capacitances, how to make computer simulation and tolerance analysis with computer are described in detail

    摘要本文我們重點介紹了一種實用的雙二次型高性能橢圓函數有源帶通濾波器的設計方法，詳細介紹了該濾波器的設計步驟及阻容元件的參數計算，並對設計出的電路用計算機進行模擬模擬和容差分析。
  3. This paper presents a method that chopping wave is done by switch devices which consist of three - level resistance regulating module and intelligence power module ipm, and which realizes constant - current discharge of storage battery. to achieve the intelligence control of the drive protection and the discharge process of ipm, the paper designs circuit formed by igbt threshold drive pulse pwm signals. ipm fault - blocking protection circuit and microcomputer 80c196. the devices can accurately control the 0 ~ 150a discharge current and the discharge time of the storage battery and calculate the releasing power

    實現蓄電池恆流放電過程智能控制是蓄電池放電裝置發展的必然趨，本文提出了一種通過三極電阻調節模塊和由智能功率模塊ipm為開關器件進行斬波從而實現蓄電池恆流放電的方法。為達到對ipm的驅動保護和放電過程的智能控制，文中設計了igbt門極驅動脈沖pwm信號形成電路和ipm故障封鎖保護電路及由單片機80c196為核心的微機控制器。本裝置能夠對蓄電池進行0 150a放電電流及放電時間的精確控制及釋放容量的計算。
  4. The goal is to prevent leakage of the waste for many millennia through a combination of engineered barriers ( for example, the waste containers ) and geologic ones ( the natural rock structure where the chamber has been excavated and the favorable characteristics of the hydrogeologic basin )

    這麼做的目標是在數千年內避免廢棄物外? ，辦法是結合工程上特別處理過的圍阻體（例如廢棄物容器）以及地質上的圍阻體（地下開挖出來的空間周圍的自然巖石結構，以及水文地質盆地等一些較有利的條件） 。
  5. We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions

    通過理論和試驗探討，選用鎳鉻合金電阻絲作為加熱元件，配以陶瓷質埋入式爐膛；選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器；選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶（ k ）作為測溫元件；熱電偶對稱安置在樣品支持器容器的中部；選用硅酸鋁耐火纖維作保溫材料；合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體；採用升溫曲線來控制爐膛供熱過程；採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法，進行圖形處理。
  6. In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models

    對于橫向運動的體微機械器件，其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型，通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數，研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。
  7. " electronic 1c chip drawing system " provides many functions such as " modify the position of the component ' s diagram " " modify the color of the component ' s diagram " " magnify and minify the component ' s diagram without distortion " " change the type of drawing line " " edit some physical properties of the component " " copy and paste diagram of one component " " delete one or more component diagrams " " move more than one components " positions " " change the z _ order of the diagram, set it to back or bring it to front " " save the drawing of the electronic components to one file and the file extension name is *. brd " " print the drawing ". users can finish all these functions easily by clicking and dragging the mouse

    電路板元器件繪制系統主要完成了使用鼠標拖拽、鼠標點按的方式繪制電路板上各種常見的元器件圖形；編輯電路板上元器件圖形的位置；編輯元器件圖形的顏色；不失真的對器件圖形進行放大和縮小；編輯元器件圖形的線型；編輯電路板上各個器件的物理屬性（比如電阻的阻值大小、電容的容量大小、額定電壓等） ；復制已經繪制出的電路板上的器件；粘貼剪貼板上的器件；刪除單個或多個已經繪制出的器件圖形；同時改變多個器件圖形的位置；改變繪制區內各個元器件的zorder順序，也就是可以將層疊在一起的圖形置前或置后；把繪制的電路板器件圖保存到指定文件中；能打開、查看和修改保存的電路板器件圖；列印電路板器件圖。
  8. Bai shi new development over the years, the company ' s products are mainly trade sales world - renowned brands ; has formed a production and supply of quartz crystal and ceramic capacitors, thick film resistors based serial production lines. main products include : plug posted quartz crystal surface, the surface of quartz crystals and crystal oscillators, posted plug surface, quartz oscillator vco, stickers and vco plug - round version of ceramic capacitors and vertical and horizontal layer ceramic capacitors, chip resistors and resistor ranked / exclusion order and capacitance / second polar body / mixed network

    新佰仕經過多年的發展，公司貿易的產品主要銷售世界知名品牌電子元器件；現已形成了以生產及供應石英晶體?陶瓷電容器?厚膜電阻器為主的系列化產品生產線，主要產品包括：表面貼石英晶體?插件石英晶體?表面貼石英振蕩器?插件石英振蕩器?表面貼壓控振蕩器?插件壓控振蕩器?圓版型陶瓷電容?立式與臥式積層陶瓷電容?排列電阻器?晶元電阻/排阻?排列電容/二極體/混合網路。
  9. The shorter the interval between the two pulses of the current wave, the fewer strikes the varistors can endure. at the same time, the dc ljima changes fast - slowly - fast alone with the experiment continuing. microstructual disorder, such as variations in the height of the electrostatic potential at grain boundaries and electrode protrusions into the zinc oxide varistors, causes substantial temperature rise in a microscopic region around the defect and is the source for failure

    雷電的多重閃擊對雷電過電壓保護器件的影響更加嚴重，本文首次採用不同間歇時間雙脈沖電流沖擊對氧化鋅電阻進行了多次試驗，試驗表明：氧化鋅電阻在雙脈沖電流沖擊下更容易出現老化破壞現象，間歇時間越短，電阻能耐受的沖擊次數越少；此外，直流u _ （ 1ma ）值隨沖擊次數的增加具有快一慢一快的下降過程。
  10. Harmonized blank detail specification for lead screw actuated non - wirewound preset potentiometers - square form, container sealed, actuating device insulated from resistive element, slipping clutch at each end of travel, rigid terminations - assessment level s

    導螺桿傳動非線繞預調電位器協調空白詳細規范.正方形的容器密閉的與電阻元件絕緣的驅動裝置每個行程終止的滑動離合器剛性終端.評定級別s
  11. In the forth chapter, the performances of mr dampers designed and fabricated at chongqing university have been tested in national center for test and supervision of coach quality, including schematics of damping force vs. displacement of piston head, damping force vs. velocity of piston head, etc. for some given electric currents of the coil. the experimental results demonstrate that damping force offered by mr damper consists of background damping generated by resistance of mr fluid and damping caused by magnetic field

    對不同勵磁電流條件下的理論阻尼力與測試阻尼力進行了比較，分析了產生誤差的主要原因；對阻尼器產生溫度效應產生的主要原因進行了分析，提出了應該提高磁流變體的溫度穩定性；推導了磁流變體的感性和容性流動方程，從理論上分析了磁流變體的感性和容性對阻尼器特性的影響。
  12. First we measured s - parameter of the device and package shell. the package shell and bonding wire are expressed with equipment circuit composed of the resistance, capacitance and inductance then acquired the value of component by optimizing using microwave emulation software ( microwave office )

    首先，測量出管殼封裝器件和管殼的s參數，把管殼和鍵合線均表示為由電容、電感、電阻組成的等效電路，再用微波模擬軟體（ microwaveoffice ）優化出元件數值。
  13. Surface acoustic wave components, capacitors, emc filters, ntc thermistors, ptc thermistors, ferrites & accessories, inductors, microwave ceramics, arrestors, rf modules etc

    聲表面波元件，電容器，電源濾波器，熱敏電阻，壓敏電阻，鐵氧體磁心與附件，電感器件，微波陶瓷元件，氣件放電管，射頻前羰模塊等等
  14. By means of the theoretical analysis of the micromachined vibratory rate gyroscope, we get following conclusions : the microgyroscope can be driven by tangent electrostatic force produced by fence structure electrodes, and the normal electrostatic force can be neglected for the influence of the device property ; the parasitical capacitance and fringing effect can ’ t be neglected for the calculating of the detection capacitance ; the coefficient of damping force is comparatively little when the air damping in the driving mode and the sensing mode of the device is the couette flow damping

    主要內容如下: 1 .分析了微機械陀螺的運動特性、靜電驅動特性和在大氣下的阻尼特性，分析結果表明，可以運用切向靜電力驅動質量塊振動，法向靜電力對器件特性的影響可以忽略;在計算微結構電容時，電容的邊緣效應和寄生電容不可忽略;在器件所受阻尼主要為庫埃特流阻尼的情況下，阻尼力系數較小。
  15. Compared with the similar research results, the weighted control ic here has the following characteristics : ( 1 ) the circuit structure is simpler ; ( 2 ) the chip ' s fabrication is compatible with standard cmos process ; ( 3 ) n - mosfets with high w / l ratio and short channels are used for weighting and output to reduce the insertion loss ; ( 4 ) the weighting factor varies in a relatively wide range with the controlling signals ; ( 5 ) input and output impedance approach 50 in low frequency ( e. g. 50mhz ), while in higher frequency they slightly deviate from 50, hence the energy reflection lower than 0. 1 ; ( 6 ) it completes the functions of sampling, weighting, controlling and summing of high frequency analog signals

    它的加權控制電路與已報道的相關電路相比具有如下特點：電路結構簡單；製造工藝與普通cmos工藝兼容：短溝道，高寬長比的nmos晶體管具有低的通導電阻，將其作為加權、輸出器件可降低由電路引起的插入損耗；改變加權信號，可實現權值在較大范圍內的連續變化；輸入、輸出阻抗在低頻（如50mhz ）下接近50 ，而在高頻下略有偏離50 ，但反射系數均低於0 . 1 ；實現了對高頻信號的取樣、加權、控制、疊加功能的迭加。
  16. Cd1 - xznxte single crystal with good crystallinity has been grown by the descending ampoule with rotation method - before this, high - purity cd1 - xznxte polycrystal materials have been synthesized from 6n gd zn te in the same ampoule. on the basis of this, we deeply explore method of detector fabrication. and we also studied the level and density of traps in detector. gold, indium and c have been deposited as electrodes on polished and chemically etched surfaces of samples with the sizes from 5 5 1 to 10 10 1. 5mm to compare different contact technologies. the behavior of detector ' s leakage current with temperature and leakage current with time were studied as well as th current - voltage characteristics to deduce the level and density of trap in detectors

    我們利用熔體溫度振蕩法在石英安瓿中將6n的單質cd 、 zn 、 te合成多晶原料，用坩鍋旋轉下降法在同一安瓿中生長出尺寸為20 40mm的cd _ （ 1 - x ） zn _ xte晶體。在此基礎上對碲鋅鎘探測器的工藝進行了較深入的研究，製作了厚1 ? 1 . 5mm的探測器，測試了c 、 in 、 au等不同金屬的電極接觸性能，並在國內首次通過測試器件的i ? v 、 i ? t曲線、弛豫特性和電容特性對電阻率、陷阱能級、陷阱濃度進行了分析，同時測得的~ （ 241 ） am源的能譜。
  17. The ingredients limiting power capability and depress combining efficiency in the whole system have been discussed. the infection of the dimension of microstrip line to power capability of devices and the power capability of isolate resistor has been investigated in detail. a high efficiency adaptive power combining technique restraining great degradation in multi - way combining system has been introduced ; 2

    文章的主要內容是: 1 .討論了功率合成系統中限制功率容量、降低合成效率的因素;詳細研究了微帶線尺寸對器件功率容量的影響，以及大功率合成系統中隔離電阻功率容量的量值;針對多路合成系統中適度惡化現象合成提出高效率的自適應合成方法。
  18. Usually, the test program will first test the passive components, such as resistors, capacitors, and inductors

    通常，首先對無源器件測試，如電阻、電容和電感。
  19. Detail specification for lead - screw actuated wirewound or non - wirewound preset potentiometers - rectangular and square forms, container sealed, actuating device insulated from resistive element, slipping clutch at each end of travel - full assessment level

    導桿驅動線繞或非線繞預調電位計詳細規范.長方形和正方形密封容器與電阻元件絕緣的驅動裝置每個行程終止的滑動離合器.全面評估級
  20. 5 、 through the structural parameters of the sige hbt, associating the passive devices, the layout of the monolithic integrated circuit lna is obtained, and the technology of the circuit and the vital process process are introduced. through the analysis and the design of sige hbt, two solutions of the base

    重點是通過對sigehbt分析和研究，提出了解決基區外擴現象的兩種方案，同時在工藝上應用sigehit - kit0 . 35 mbicmos新工藝來製作平面電感、電容、電阻和有源器件。
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