除氣退火 的英文怎麼說
中文拼音 [chúqìtuìhuǒ]
除氣退火
英文
degassing anneal-
In this paper, the flow pattern defects ( fpds ) were revealed by secco etchant and their shape, distribution on wafer and tip structure were studied in details by optical microscope and atomic force microscope ( afm ). the relationship between etching time and the tip structure of fpds was also discussed. furthermore, by studying the effect of rapid thermal annealing ( rta ) on the density of fpds in ar, the annihilation mechanism of fpds was discussed in this paper
本文將cz硅單晶片在secco腐蝕液中擇優腐蝕后，用光學顯微鏡和原子力顯微鏡對流動圖形缺陷（ flowpatterndefects ， fpds ）在矽片中的形態、分佈及其端部的微觀結構進行了仔細地觀察和研究，並討論了腐蝕時間對fpds缺陷端部結構的影響；本文還通過研究ar氣氛下快速退火（ rapidthermalannealing ， rta ）對fpds缺陷密度的影響，初步探討了fpds的消除機理。Implantation damage can be removed by annealing, i. e. heating in flowing gas.
注入損傷可以通過退火，即在流動空氣中熱處理來消除。However, te - rich phases and point defects with high concentration were found locally. not only the vapor - solid equilibrium but also the vapor - liquid - solid equilibrium should be considered for the annealing of the crystals with te - rich phases. by analyzing the phase diagrams of cd - te and p - t plot of cd1 - xznxte ( x = 0. 04 ), it was concluded that for the purpose of rem
本文通過仔細分析cd . te二元相圖和cd卜龍znxte （ x = 0 . 04 ）的p一t相圖，認為為了去除富te相，獲得穩定的電學性能，退火時晶片溫度應小於115ok ，氣氛環境的總壓力應小於pcs （對cdte ， pc洶Bulk crystals of cd1 - xznxte with high quality are very difficult to obtain. commercial cd1 - xznxte crystals usually contain defects such as twins, sub - grain boundaries, dislocations, and te precipitates. these defects will seriously deteriorate the optical and electrical properties of the crystals
為了提高晶體性能、減少或消除晶體缺陷，尤其是te沉澱和te夾雜，必須將cd _ （ 1 - x ） zn _ xte晶體在一定的溫度和氣氛條件下進行退火處理。分享友人