陷阱電荷 的英文怎麼說

中文拼音 [xiànjǐngdiànhé]
陷阱電荷 英文
trapped charge
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 荷 : 荷名詞（蓮） lotus
  • 陷阱 : pitfall; pit; trap; gin; deadfall; snare
  1. Space charges is often created by trapping or preventing their movement due to various traps, as a result trap properties decide the store and transport of the charge

    空間電荷往往是各類陷阱俘獲和阻止電荷運動造成的，陷阱的性質決定著電荷的存貯和輸運。
  2. To analysis the principle of degradation and destruction, a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed, which leads to a conception of critical trap electron density

    本文首次建立了晶界勢壘高度與伏安特性參數之間的關系，提出了陷阱效應在沖擊老化過程的作用模型，引入了「臨界陷阱電荷密度」的概念。
  3. The main points include : the bias electric field and the charges in the traps are the main reasons to generating hot electrons, the number and the kinetic energy of hot electrons are determinative for damage degree of ga ? s bands, relaxation degree of ga ? s network reflects the degree of breakdown, and the number of the detrapping of trapped electrons reflects the degree of restoration

    其主要作用機制為:偏置電場和陷阱電荷電場可產生大量熱電子，熱電子的數量和動能決定ga一as鍵的損壞程度， ga一as的斷裂程度反映pcss 』 s的擊穿類型，而退陷電荷的數量則反映了pcss ， s可恢復損傷的程度。
  4. The results show that hh silc is attributed to oxide hole detrapping and the annihilation of positive charge - assisted tunneling centers

    研究結果表明：熱空穴silc機制是由於氧化層空穴的退陷阱效應和正電荷輔助遂穿中心的湮滅。
  5. A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically

    在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。
  6. Due to different trap depths, physical reactions and chemical reactions, space charge in frp rod materials had different polarities and densities is influenced by temperature evidently, especially between 20 and 40 and between 100 and 120

    由於陷阱深度的不同和物理、化學變化的作用，不同溫度下芯棒材料內空間電荷的積聚極性和積聚量不同，特別是在20和40之間以及100和120之間存在明顯變化。
  7. It is shown in mechanism analysis that 1 / f noise originating from border traps is ~ sensitive to both of the oxide charges and interface traps induced by esd and hci and the similarity coefficient can express the local characterization more thoroughly, while the changes of electrical parameters usually lie on one of the defects

    機理分析表明，起源於邊界陷阱的1 / f噪聲對于靜電和熱載流子誘發的氧化層電荷和界面陷阱兩類缺陷都同時敏感，而相似系數更能反映1 / f信號的局域特性，但電參數的變化通常主要取決于其中一類缺陷。
  8. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
  9. Important results are derived in measuring and calculating trap density in this dissertation

    本文在陷阱電荷密度的測量和計算方面取得重要結果。
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