集電極增益 的英文怎麼說
中文拼音 [jídiànjízēngyì]
集電極增益
英文
collector gain-
Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit
日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。A planar sige heterojunction bipolar transistor was fabricated using polysilicon emitter technology and sige base grown by molecular beam epitaxy. the sige hbt
室溫下該晶體管的直流電流增益為30到50 ，基極開路下，收集極-發射極反向擊穿電壓
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