雜質型 的英文怎麼說

中文拼音 [zázhíxíng]
雜質型 英文
impurity type
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. 14 species are edible plants, 37 species are medicinal plants, 11 species are ornamental plants and31 species are feeding plants, the major types of halophytic vegetation in hebei province include ptenothalophyta such as tamarix chinensis brush and siberian brush, and littoral halophytic vegetation such as succulent vegetation, poion, chomophyte and etc. epidermal cell exosporium of tamarix chinensis blade is papillous and capillaceous ; stoma and salt - secreting gland are under the epidermis ; differentiation level of mesophyll tissue is rather high ; porder camber is obvious ; and mechanical tissue is developed

    河北省鹽生植物的經濟價值較高，其中可食用的鹽生植物共計14種，可藥用的鹽生植物37種，可飼用的鹽生植物31種，具有觀賞價值的鹽生植物11種，可以作為纖維植物計約9種。河北省主要鹽生植被類型有檉柳灌叢、西伯利亞白刺灌叢等落葉灌叢和肉質型、禾草型、雜類草型鹽塵植被等濱海鹽生植被。
  2. All in all, ga dopant is superior to other p - type dopants

    總之， ca具有其它p型雜質所不可比擬的優越性。
  3. The structures and characteristics of several graphite samples are measured by means of powder x - ray diffraction ( xrd ), brunauer - emmer - teller ( bet ) surface area measurement, inductively coupled plasma ( icp ) spectroscopy, particle size analysis and electrochemical measurements. the effects of origin, structure, impurity, particle size, specific surface area of carbon materials on the electrochemical characteristics are studied. a synthetic graphite with abundant resources, low cost and favorable performance is determined as the raw material for modification of graphite

    採用xrd 、 bet 、 icp 、激光粒徑分析及電化學性能測試等方法，對國內外多種典型石墨樣品的結構與性能進行比較，研究石墨材料的來源、晶體結構、雜質含量、顆粒大小、比表面積等因素對其充放電性能的影響，確定一種性能較好、價格低廉、來源廣泛的普通人造石墨粉作為熱處理與摻雜改性、以及復合結構炭材料研究的原材料。
  4. Semiconductors containing such impurities are called p-type semiconductors.

    含有這類雜質的半導體叫做P型半導體。
  5. Adopted stainless steel cover and innocuous filtration medium, gl - r liquid oil purifier can filter impurities in rape oil, sesame oil and peanut oil, ect edible oils and beverage

    用不銹鋼外殼和對人體無害的濾芯製造的gl型液體過濾機，可作為去除菜油麻油花生油等食用油中和飲料中所含雜質的專用過濾設備。
  6. There are mainly three arguments on the physical origin of the new conduction band minimum of ganas ( or galnnas ). they are band anti - crossing model, gaas conduction band mixing model and impurity band model

    關于ganas的導帶帶邊的物理本質，目前主要有三種爭論較激烈的觀點，它們分別是能帶反交叉模型， gaas導帶混合模型，雜質帶模型。
  7. In this paper, the effect of interface properties of sio2 / sic on performances of n - channel sic mofet are studied systematically : incomplete ionization of impurity in sic is analyzed based on the crystal structure of sic materials. the effect of incomplete ionization of impurity on c - v characteristics of p - type 6h - sic mos is researched based on charge - sheet model for sic mos inversion layers

    本文就sio _ 2 / sic界面質量對n溝sicmosfet性能的影響做了深入的研究：從碳化硅材料的晶體結構出發分析了碳化硅材料中雜質的不完全離化，採用sicmos反型層薄層電荷數值模型，研究了雜質不完全離化對p型6h - sicmosc - v特性的影響。
  8. Some cubic perovskites are good cases in point such as srtio3 and ktao3. experimental results show that when ba2 + and li + are doped into the above materials respectively and at the same time the impurity content is higher than their critical concentration, the impurity induced ferroe lectric phase transition occurs

    Srtio _ 3和ktao _ 3是典型的量子順電體，實驗表明當兩者分別摻雜ba ~ （ 2 + ）和li ~ +且雜質濃度超過各自的臨界濃度時，順電相不再穩定，出現由雜質導致的鐵電相變。
  9. In the model of on - resistance, we have considered the lateral doping distribution in ldmos channel and vertical doping distribution in drift region. then we provide the explicit dependence between on - resistance and doping distribution parameter

    導通電阻模型考慮了ldmos的溝道橫向雜質分佈和漂移區雜質縱向分佈的結構特點，給出了導通電阻與雜質分佈參數的明確函數關系。
  10. The binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field using effective mass approximation and variation method have been discussed

    利用有效質量近似、變分法，研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能。
  11. Firstly the binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field will be displayed. then how to use the nuclear spin as the quantum bit will be given

    首先研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能，然後討論了如何利用量子點中雜質核自旋構造量子位。
  12. In the paper the structure and principle of the secondary ion mass spectrometry ( sims ) are reported, and its typical applications in the hgcdte material and devices processing, especially in the measurement of the junction depth and the quantity analysis of trace impurity are introduced

    摘要文章介紹了二次離子質譜儀的結構及其基本工作原理，並通過對典型應用的分析，介紹了二次離子質譜分析技術在高靈敏度碲鎘汞紅外焦平面探測器材料和器件制備工藝中的作用，特別是在結探監測和微量雜質監控方面所發揮的重要作用。
  13. In the framework of the transverse ising model ( tim ), landau phase transition theory and the electrostatic field theory, we study the physical properties of the ferroelectric thin film, bilayer, sandwich structure, multilayer with a non - polarization slab and a two - dimension polar lattice model with polar defects. the main work and results are as follows : first, the long - range interaction in ferroelectric material is sometimes neglected in the previous studies. we introduce the long - range interaction in the framework of the tim and the landau theory

    本文在橫場伊辛模型、朗道相變理論以及靜電場等理論的框架內，對鐵電薄膜、鐵電雙層膜、鐵電三明治結構以及含有雜質層的鐵電多層膜和含有偶極缺陷的二維偶極點陣系統等多層鐵電系統的相變、熱電、介電、電滯行為等物理性質進行了深入研究。
  14. By making use of the strong bound quantum dot model and neglecting the effects of impurity on electron wave function, this thesis is also reported how to use the spin of nuclear as the quantum bit

    利用強束縛量子點模型，忽略雜質對于電子波函數的影響，我們還討論了如何利用核自旋構造量子位。我們計算了垂直耦合量子點中電子和核子的超精細相互作用。
  15. At the initial stage of planar technique, b was employed as ideal diffusion impurity in base - region of npn si planar devices because of the match of its solid - solubility and diffusion coefficient in si with those of p in emission - region, and the good shield effect of sio2 film to b. but because of the relatively large solubility ( 5 1020 / cm3 at 1000 ) and the small diffusion coefficient, the linear slowly - changed distribution of acceptor b in pn junction can not be formed, which could not cater to the requirement of high - reversal - voltage devics. thereafter b - a1 paste - layer diffusion technology and close - tube ga - diffusion technology had been developed, while the former can lead to relatively large the base - region deviation and abruptly varied region in si, which caused severe decentralization of current amplification parameter, bad thermal stability and high tr ; the latter needed the relatively difficult pack technique, with poor repeatability, high rejection ratio, and poor diffusion quality and productio n efficiency

    在平面工藝初期，由於b在硅中的固溶度、擴散系數與n型發射區的磷相匹配， sio _ 2對其又有良好的掩蔽作用，早被選為npn硅平面器件的理想基區擴散源，但b在硅中的固溶度大（ 1000時達到5 10 ~ （ 20 ） ，擴散系數小， b在硅中的雜質分佈不易形成pn結中雜質的線性緩變分佈，導致器件不能滿足高反壓的要求，隨之又出現了硼鋁塗層擴散工藝和閉管擴鎵工藝，前者會引起較大的基區偏差，雜質在硅內存在突變區域，導致放大系數分散嚴重，下降時間t _ f值較高，熱穩定性差；後者需要難度較大的真空封管技術，工藝重復性差，報廢率高，在擴散質量、生產效率諸方面均不能令人滿意。
  16. Increasing production potentiality analysis of cross - vairiety maize

    玉米異質雜合型種植增產潛力分析
  17. Dsc, xrd, and edx analysis were adopted to explore the solid - state reaction processing parameters. the results showed that zrnisn - based compounds were synthesized at 1173k with holding for 96 ~ 168hrs, which were also under high purity ar shielding

    結果表明：通過固相反應， zrnisn基化合物可以在高純ar氣保護下於1173k保溫96 168小時獲得：各種組分的產物晶型完整且無雜質相出現。
  18. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  19. Abstract : this paper reports the observation and analysis results on three kinds of impurity in - al2o3 by using epma - eds. we studied the differences of electric conductivity between the area containing inmpurity and the normal area by ion transport method. the effects of impurity in - al2o3 on cycle life of the na - s cell were also discussed

    文摘:用epma - eds組合儀，對氧化鋁中的三種典型雜質進行了形貌觀察和成分分析，並用電子束誘導離子遷移法，研究了雜質區及正常區的離子電導差異，討論了不同雜質的特點及對氧化鋁作用中的危害。
  20. The theory of the hydrogen uptake on carbon nanotubes has been discussed. secondly, for the purpose of improving the activities of the carbon nanotubes " surface, mwnts were treated by oxygenation in the air and surface treatment. thirdly, mwnts were modified by mechanical grinding

    對多壁碳納米管氧化提純及表面處理的研究表明：空氣中焙燒多壁碳納米管可除去無定型碳等雜質，碳管的純度大為提高； naoh是良好的分散劑，可改善碳管的表面活性。
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