雜質態 的英文怎麼說

中文拼音 [zázhítài]
雜質態 英文
impurity state
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 質 : Ⅰ名詞1 （性質; 本質） nature; character; essence 2 （質量） quality 3 （物質） matter; substance;...
  • 態 : 名詞1. （形狀; 狀態） form; condition; appearance 2. [物理學] （物質結構的狀態或階段） state 3. [語言學] （一種語法范疇） voice
  • 雜質 : [固體物理] impurity; foreign substance; impurity substance; inclusion; foreign matter
  1. The isoelectronic system of gap : n has been investigated extensively in the dilute limit since 1965. thomas et al identified that a series of sharp emission lines in gap : n were due to the recombinations of excitons bound to either isolated nitrogen centers or various nitrogen pair centers

    這些譜線來自於等電子雜質n形成的束縛激子態（孤立n中心和nn _ i對）輻射復合產生的零聲子線及其聲子伴線。
  2. Also, the different temperature dependence between the sidebands of nni and the zero phonon line indicates there might exist other n impurity states

    或許正是這些雜質態的存在，降低了樣品的熱激活能。在組分從x = 0 . 24 %到x紹
  3. Ground state energy of a pollution state in polyatomic polar crystals

    多原子極性晶體系統中雜質態的基態能量
  4. The investigation of the exciton - phonon coupling of nn3 center offers a direct proof that all the phonon replicas are the phonon sidebands governed by the huang - rhys " multiphonon optical transition theory, and clarifies the speculations that the replicas associated with optical phonons are independent bound states of exciton - phonon complexes or due to other alternative mechanisms

    對其變溫pl譜的研究還發現，在nn :的聲子伴線區域呈現出的異于多聲子光躍遷理論的現象，說明在該區域可能存在著其它的n雜質態。
  5. We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field

    我們開創性的把它應用到處理有拋物線量子阱中的束縛極化子，得到了有外電場的量子阱中，類氫雜質中的電子基態能量的解析結果。
  6. China sesameseed : moisture ( max ) 8 %, admixture ( max ) 2 %, oil content ( wet basis ethyl ether extract ) 52 % basis, should the oilcontent of the goods actually shipped be 1 % higher or lower, the price will be accordingly increased or decreased by 1 % and any fraction will be proportionally calculated

    例如：中國芝麻：水分（最高） 8 % ，雜質（最高） 2 % ，含油量（濕態乙醚浸出物） 52 %基礎，如實際裝運貨物的含油量高或低1 % ，價格相應增減1 % ，不足整數部分按比例計算。
  7. The binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field using effective mass approximation and variation method have been discussed

    利用有效質量近似、變分法，研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能。
  8. Firstly the binding energies and the ground state energies of hydrogen impurity in a lens - shaped quantum dot ( gaas / inl - xgaxas ) under vertical magnetic field will be displayed. then how to use the nuclear spin as the quantum bit will be given

    首先研究了垂直磁場下透鏡型量子點（ gaas / in1 - xgaxas ）摻入類氫雜質后基態能和結合能，然後討論了如何利用量子點中雜質核自旋構造量子位。
  9. Donor states in semiconductor quantum wells

    半導體量子阱中施主雜質態研究
  10. That machine passes to stab the nail primarily to the seed cotton in line up miscellaneous the stroke on the net, tie the seed cotton loose and threw away seed cotton small impurities and dust, to change the external appearance condition, in order to spend in the stranding

    三輥清花機該機主要通過刺釘對籽棉在排雜網上的打擊，將籽棉打松並去掉籽棉中細小雜質和塵土，以改變外觀狀態，以便於軋花。
  11. Asset appraisal, as a part of neutral activity which tightly accompanied with asset business, put forward a new theme on how to conform to the transformation trend of appraisal research and build up more perfect and integrated appraisal theory under comprehensive, mobile and uncertain conditions which may be helpful to select a proper method in order to promote the quality of appraisal in the activity traditional appraisal theory is built on neo - classical value theory

    作為伴隨資產業務、能提供資產現時價值的資產評估中介性活動，如何適應資產評估研究範式的轉化趨勢，在復雜、動態與不確定的環境背景條件下構築完善的資產評估理論，進而選擇適用的資產評估方法以提高資產評估質量是資產評估界面臨的新議題。傳統資產評估理論構建於新古典綜合價值理論基礎之上。
  12. Based on the hydrodynamics energy transport model, the degradation induced by donor interface state is analyzed for deep - sub - micron grooved - gate and conventional planar pmosfet with different channel doping density. the simulation results indicate that the degradation induced by the same interface state density in grooved - gate pmosfet is larger than that in planar pmosfet, and for both devices of different structure, the impact of n type accepted interface state on device performance is far larger than that of p type. it also manifests that the degradation is different for the device with different channel doping density. the shift of drain current induced by same interface states density increases with the increase of channel do - ping density

    基於流體動力學能量輸運模型，對溝道雜質濃度不同的深亞微米槽柵和平面pmosfet中施主型界面態引起的器件特性的退化進行了研究.研究結果表明同樣濃度的界面態密度在槽柵器件中引起的器件特性的漂移遠大於平面器件，且電子施主界面態密度對器件特性的影響遠大於空穴界面態.特別是溝道雜質濃度不同，界面態引起的器件特性的退化不同.溝道摻雜濃度提高，同樣的界面態密度造成的漏極特性漂移增大
  13. In the second part, we discuss the binding energy of the impurity in finite gaas / gai. xalxas quantum wire in the first place, in which the dismatch of effective mass and dielectric constant between the well and the barrier is taken into account

    在第二部分，首先討論了有限深gaas ga _ （ 1 - x ） al _ xas量子阱線中雜質態的束縛能，其中考慮到了阱壘中電子有效質量及材料中介電常數的失配性。
  14. Secondly, density of states for metallic carbon nanotubes with a magnetic impurity is studied based on a single orbital anderson model

    其次，引入anderson模型和快速收斂的微擾展開方法研究了單個磁性雜質對碳納米管態密度的影響。
  15. 2. in this paper, the continuity of the wavefunction and of its derivative divided by the band - mass can be satisfied and the number of the terms is small when calculating the energies of the single electron in a square quantum wire with finite barriers, then this wavefunction can also be selected as the envelope function in studying the impurity states and the excitons in the square quantum wires with finite barriers

    2 .由於本文所取波函數滿足波函數的連續性條件和粒子流的守恆條件，並且計算有限深方形量子線中單電子的能量時需要展開的項數較少，故此波函數也可選為有限深方形量子線中雜質態、激子等問題的包絡函數。
  16. ( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires

    （ 3 ）當施主離子位於勢阱中不同位置時，零電場下量子阱線中的雜質態是關于施主離子位置中心對稱的簡並態，在外加電場作用下發生能級分裂，這種簡並不再存在;雜質的stark能移由於施主離子位置的不同表現為紅移或藍移。
  17. Though they discuss the impurity in the qwws under the electric field in more ditail, they localized the square gaas / ga _ ( 0. 63 ) al _ ( 0. 37 ) as qwws with the infinite potential barrier case

    前人雖然對外加電場下量子阱線中的雜質態做了較為詳細的討論，但是他們所選取的矩形量子阱線僅僅局限在無限深的情況。
  18. In the past 20 years, impurity state in low dimensional semiconductor structures have been studied extensively. impurites play an important role in the transport properties and optical properties of these structures

    自80年代以來，低維半導體材料中雜質態的各種性質引起人們的廣泛關注，雜質對于材料中的電子輸運及光學性質都有重要影響。
  19. In the past 20 years, hydrogenic impurities in low dimensional semiconductor structures have been studied extensively. impurities play an important role in the transport properties and optical properties of these structures

    自80年代以來，低維半導體材料中雜質態的各種性質引起了人們的廣泛關注，雜質對于材料中的電子輸運及光學性質都有重要影響。
  20. We discuss the qcse of the impurity in the finite square qwws considering impurity position, and raise a point of the qcse under the influence of the masses mismatch and the aspect ratio of the quantum well wires. without considersion of the mismatch of the effective masses between the well and barrier, we obtain the conclusion as follows : ( l ) the first band energy of the electron is decreased under the electric field

    在前人工作的基礎上，我們在有效質量近似下討論了外加電場下有限深方形gaas ga _ （ 0 . 63 ） al _ （ 0 . 37 ） as量子阱線的雜質態和雜質的stark能移，並把我們的結果與前人的結果進行了比較。
分享友人
分享到 Line

分享到臉書