離子刻蝕 的英文怎麼說
中文拼音 [lízikèshí]
離子刻蝕
英文
ion etching-
Plasma cyro - etching of high aspect ratio silicon crystal structures
等離子體低溫刻蝕單晶硅高深寬比結構Yak hairs were treated by the microwave electron cyclotron resonance plasma reactive ion etching ( ecr - rie ) equipment to improve its property of weave
摘要採用微波電子迴旋共振等離子體反應離子刻蝕（ ecr - rie ）裝置對氂牛毛纖維進行表面改性，從而改善氂牛毛的可紡性。Influence of process parameters on the etching rate in inductively coupled plasma etcher
等離子體刻蝕中工藝參數對刻蝕速率影響的研究Lin h, li l and zeng l., " in - situ end - point detection during ion - beam etching of multilayer dielectric gratings ", chin. opt. lett., 3 ( 2 ), 63 ( 2005 )
林華， "介質膜光柵:光刻膠掩模占寬比和離子束刻蝕槽深的監控" ，博士論文，導師:李立峰（ 2006 ）Magnetization magneto - microwave plasma etching system
磁場微波型等離子體蝕刻系統Magnetron enhanced reactive ion etaching system
磁控管增強型反應性離子蝕刻系統This paper mainly discusses the designing and testing method to the dds acousto - optic mode locking. it also makes some further analysis on the critical technology - - - - - - the transducer acoustical membrane matching and transducer thinning, which can directly affect the performance of acousto - optic elements. it then analyses the heat effect of acousto - optic elements and the technology of transducer thinning by developing ion - beam sputtering of high frequency acousto - optic elements
本文重點討論了dds聲光鎖模器的設計及測試方法，討論和分析了影響聲光器件性能的關鍵工藝換能器聲學膜層匹配和換能器減薄工藝，對聲光器件的熱效應進行了測試分析，對離子刻蝕法聲光換能器減薄新工藝作了一定的探討。When the two layers of sio2 with different refractive index are finished, the designed mask pattern is printed on the film by photolithography. after that, icp is performed for dry etching, then, the waveguide structures are obtained. at present, the rudimental graph of edg has been obtained
兩層不同折射率的sio _ 2薄膜制備好之後，經過光刻、等離子體刻蝕（ icp ）的工藝步驟之後，形成了波導結構，初步製作出了器件的圖形。Generic specification of ion beam etching system
離子束蝕刻機通用技術條件Reactive ion beam etching system ribe system
反應性離子束蝕刻系統Compared with the conventional chemical etching, laser assisted wet chemical etching can eliminate the effect of crystal orientation efficiently and fabricate more diversified etched pattern ; compared with the laser assisted gas chemical etching, the required condition for laser wet etching can be realized more easily and the operation can be simplified ; compared with the ion etching, it has advantages of no ion damage to substrate, avoiding over - etching and cost - effective
半導體的激光誘導液相腐蝕與普通化學腐蝕相比，可以有效地消除晶體取向影響，製作出更加多樣化的腐蝕圖形;與激光誘導氣相腐蝕相比，其工藝條件更加容易實現，操作更加簡單;與干法離子刻蝕相比，對基片無離子損傷，過度腐蝕容易控制，成本低。By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes
研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。The theory of ion etching and the parameter of ion source designing are discussed in detail
並且詳細介紹了離子刻蝕和離子源的原理。Fabrication of ultra deep electrical isolation trenches with high aspect ratio using drie and dielectric refill
用深反應離子刻蝕和介質填充技術製造具有高深寬比的超深電隔離槽The reactor is capable of working in the rie ( reactive ion etching ) mode and also in the plasma etching mode
反應腔擁有在rie （反應離子刻蝕）模式和等離子刻蝕模式下工作的能力。The typical rie fault was illustrated to build up the fault tree and qualitatively analyze rie fault by resolving the minimum practical fault
以反應離子刻蝕（ rie ）設備的典型故障為例，建立故障樹，通過求解最小實際故障來進行定性分析。In the plasma - etching mode the passivation layer that is formed on the surface is likely to be thicker than in the case of rie
在等離子刻蝕模式下，表面形成了比使用rie情況下更厚的鈍化層。Inductively coupled plasma etching system
感應耦合型等離子體蝕刻系統Barrel type plasma etching system
圓筒型等離子體蝕刻系統Ion beam etching system
離子束蝕刻系統分享友人