離子摻雜技術 的英文怎麼說

中文拼音 [lízichānzájìshù]
離子摻雜技術 英文
ion doping technique
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 摻 : 摻動詞[書面語] （持; 握） hold
  • 雜 : Ⅰ形容詞（多種多樣的; 混雜的） miscellaneous; varied; sundry; mixed Ⅱ動詞（混合在一起; 攙雜） mix; blend; mingle
  • 技 : 名詞（技能; 本領） skill; ability; trick; technique
  • 術 : 術名詞1. （技藝; 技術; 學術） art; skill; technique 2. （方法; 策略） method; tactics 3. （姓氏） a surname
  • 離子 : [物理學] ion
  • 摻雜 : 1. mix; mingle2. doping; inclusion; addition; adulteration
  1. In this paper, pure and doped ktp crystals were grown from the flux using a top - seeded method, and special technique have been used to lower the electrical conductivity to three orders of magnitude than common flux ktp, the values is up to 10 - 10 ( cm ) - 1, this overcame the shortcoming that common flux ktp cannot be used in e - o application field because of having higher electrical conductivity. the growth condition, doped elements and annealing technology were investigated. single crystals of ktp with high quality and big z - cut cross section were obtained by optimizing the parameter of crystal growth

    本實驗採用頂部籽晶熔劑法生長了純的以及不同摻雜的ktp晶體，用特殊工藝處理技術將普通熔劑法ktp的電導率降低了三個數量級，達到了10 ~ （ - 10 ） （ cm ） ~ （ - 1 ） ，解決了普通熔劑法ktp晶體由於離子電導率太大而無法用於電光應用領域的困難；對ktp晶體的生長條件、摻雜元素以及退火工藝等進行了研究，通過優化生長工藝技術參數，突破了工藝技術生長難關，得到了高光學均勻性、具有大z切面的ktp單晶。
  2. The preparation of optically active composite is a promising alternative to obtain a kind of new and competitive sensing membrane for fiber optic sensors, and has attracted the global attention. in this thesis, the modified sol - gel sensing membranes based on fluorescence quenching have been prepared by using tetraethoxysilane ( teos ) and dimthyldimethoxysilane ( dds ) as the main material, formamide as the drying control chemical additive ( dcca ), ru ( phen ) 3cl2 and ru ( bpy ) 3cl2 as the indicator. this kind of membranes is crack - free and has low indicator - leaking rate

    本文以四乙氧基硅烷（ teos ） 、二甲基二乙氧基硅烷（ dds ）為主要原料，以甲酰胺為控制乾燥劑，二價釕離子絡合物釕（ ） ?聯吡啶（ ru （ bpy ） _ 3cl _ 2 ）和釕（ ） ?菲咯啉（ ru （ phen ） _ 3cl _ 2 ）為熒光指示劑，採用改進的溶膠凝膠技術，通過添加控制乾燥劑和有機摻雜兩種手段，制備了基於熒光猝滅原理的光纖氧敏感膜。
  3. The development of research on perovskite materials doped with ions and particles, sol - gel technique and sol - gel processing of pbtio3 ( pt ) based materials were intensively reviewed. the luminescence theory of rare earth ions and the properties of carbon nanotube ( cnt ) were introduced briefly

    本文全面回顧了離子和微粒摻雜改性鈣鈦礦相鐵電材料的研究進展，總結了溶膠凝膠技術在制備此類材料中的應用，並簡要介紹了稀土離子發光機理和納米碳管的性能。
  4. A study on the synthesis, structure and performance of linio2 - based compounds as cathode materials for lithium ion batteries was carried out systemically and in detail in this dissertation. as the first step of this study, a sol - gel method using citric acid as a chelating agent was developed. the reaction conditions in sol - gel process, pre - calcination process and calcination process, especially sintering temperature and sintering time in calcinations process, were analyzed and optimized carefully

    本文採用多種結構分析、表面分析、熱分析和電化學研究方法和實驗手段，從合成方法、結構特徵、電化學性能、熱穩定性和貯存性能等多方面對鋰鎳氧系列電極材料進行了系統深入的研究，制備出性能良好的鋰鎳氧系列電極材料，解釋了鈦的摻雜對電極材料的作用機理，揭示了鋰鎳氧系列電極材料的貯存失效機理，並借鑒和發展了rietveld結構精修方法和tpd - ms技術在鋰離子電池電極材料研究中的應用。
  5. The ion implantation is used to optimize the material. we have discussed effects of the varing doses of er ions on the structural, optical and electrical properties of the cdte films deposited on si substrate

    利用這種技術實現了cdte多晶薄膜稀土離子鉺（ er ） 、鏑（ dy ）的高濃度摻雜改性。
  6. In order to otain high quality zno thin films, we, for the first time, employ the plasma enhanced chemical vapor deposition ( pecvd ) to prepare high quality zno thin film at low temperature using a zinc organic source ( zn ( c2h5 ) 2 ) and carbon dioxide ( co2 ) gas mixtures. the effects of the growing condiction and the native oxide layer of si substrate on the quality of zno thin films was studied in detail. to prepare p - zno and overcome the dufficulty of reverse due to the interaction between the n atomic, we obtain high qulaity p - zno by a easy way of thermal zn3n2

    為了在低溫下制備高質量的氧化鋅薄膜，我們採用金屬有機源和二氧化碳氣源，首次利用等離子體增強化學氣相沉積的技術在低溫下制備了高質量的氧化鋅薄膜，系統地研究了生長條件以及襯底表面氧化層對薄膜質量的影響，確定了生長高質量氧化鋅薄膜的優化條件；為獲得p - zno材料，克服在zno中摻n雜質間相互作用影響摻雜效率不易獲得p - zno的困難，我們通過熱氧化zn3n2的方法制備了p - zno ，獲得了一系列研究結果： 1 、詳細研究了氣體流速比，襯底溫度和射頻功率實驗參數對氧化鋅薄膜特性的影響。
  7. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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