離子束薄化 的英文怎麼說

中文拼音 [zishùhuà]
離子束薄化 英文
ion-beam thinning
  • : Ⅰ動詞1 (離開) leave; part from; be away from; separate 2 (背離) go against 3 (缺少) dispens...
  • : 子Ⅰ名詞1 (兒子) son 2 (人的通稱) person 3 (古代特指有學問的男人) ancient title of respect f...
  • : Ⅰ動詞1 (捆; 系) bind; tie 2 (控制; 約束)control; restrain Ⅱ量詞(用於捆在一起的東西) bundle;...
  • : 名詞[方言] (浮萍) duckweed
  • 離子 : [物理學] ion
  1. J. r. stevens et al., “ electrochromism of wo3 - based films in contact with a solid li - doped siloxane elastomer electrolyte, ” applied optics, 26, pp. 3489 - 3490, 1987

    鄭耀爵, 「以濺鍍法制備氧銦錫膜之光學、電學及可靠性質之研究, 」國立成功大學,碩士論文, 2003 。
  2. The feasibility that kaufman ion source is applied in reactive ion beam etching is discussed. etching characteristics of materials, including pr, cr, quartz, are investigated. the etch rate and mechanisms of such materials are measured and analyzed as a function of ion energy, ion beam density and ion incidence angle in pure ar and chf3, respectively. the etch rate has shown a square root dependence on variation versus

    深入研究了光刻膠、鉻膜、石英等光學材料刻蝕特性,分別以ar氣和chf3為工作氣體,研究光刻膠、鉻膜、石英等的刻蝕速率隨能量,流密度和入射角度的變關系,得到刻蝕速率與影響因素的擬合方程,為掩模的製作工藝路線提供了實驗依據和理論指導。
  3. The volatile oil of a. thaliana transferred with mint total dna was analyzed by means of gc - ms. two transgenic plants were measured to contain menthol component in 250 plants of tl generation and one plant in then * 267 progenies, which provided explicit evidence for ion beam - mediated polygenic character transmission between distant species. two conclusions were drawn : one was that multiple genes controlling the same trait could be transformed into the receipt and efficiently expressed, the other was that the transferred new character was hereditary, i. e., the genes controlling the new character could inherit

    用gc - ms分析了介導荷全dna轉的擬南芥菜個體的揮發油成分,在250個轉當代植株中有兩株被測出含有荷醇,在這兩株的267個t2代植株中仍有1株被測出含有荷醇,該實驗為介導外源全dna轉實現物種間多基因復雜性狀的轉移提供了明確的證據。
  4. A hydrogen and argon ions mixing beam was implanted into the deposited vanadium oxide film. after annealing, vo2 film with tcr ( temperature coefficient of resistance ) as high as 4 % was obtained. the bombardment of ar + could break v - o bond of v2o5 molecule in deposited film and implanted h + resulting in the deoxidization of v2o5, so the vo2 thin film could be prepared by proper control of the dose of ar + / h + implantation

    利用增強沉積設備,在ar ~ +對v _ 2o _ 5靶濺射沉積的同時,用氬、氫混合對沉積膜作高劑量的轟擊,使得被氬轟擊后斷鍵的氧釩分,再被注入氫降價,然後經適當的退火,成功地制備了熱電阻溫度系數高達4的vo _ 2膜(國外報道值為2 - 3 ) ,並研製了單元懸空結構探測器和8 1 , 16 1線性陣列。
  5. With the development of thin film science and technology, various thin film preparation techniques developed rapidly, as a result, conventional so - called filming has developed from single vacuum evaporation to many new film preparation techniques, such as ion plating, sputtering, laser deposition, cvd, pecvd, mocvd, mbe, liquid growth, microwave and mtwecr, etc., of which vacuum evaporation is the common technology for thin film preparation, because it has the distinct advantage of high quality of film deposition, good control - ability of deposition rate and high versatility

    隨著膜科學與技術的發展,各種膜制備方法得到了迅速發展,傳統的所謂鍍膜,已從單一的真空蒸發發展到包括蒸鍍、鍍、濺射鍍膜、學氣相沉積( cvd ) 、 pecvd 、 mocvd 、分外延( mbe ) 、液相生長、微波法及微波電共旋( mwecr )等在內的成膜技術。其中電蒸發技術是一種常用的膜制備技術,它具有成膜質量高,速率可控性好,通用性強等優點。
  6. Thermal coefficient of resistance of vanadium oxide film formed by lon - beam - enhanced deposition

    增強沉積氧膜的溫度系數
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