離子注入損傷 的英文怎麼說
中文拼音 [lízizhùrùsǔnshāng]
離子注入損傷
英文
ion implantation damage- 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
- 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
- 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
- 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
- 損 : Ⅰ動詞1 （減少） decrease; lose 2 （損害） harm; damage 3 [方言] （用尖刻的話挖苦人） speak sarcas...
- 傷 : Ⅰ名詞1 （人體或其他物體受到的損害） wound ; injury 2 （姓氏） a surname Ⅱ動詞1 （傷害） injure; h...
- 離子 : [物理學] ion
- 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
- 損傷 : 1. （傷害） harm; damage; injure; lesion; scuff; hurt; damnify; impair 2. （損失） loss; cause loss to
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Again, because the ion influx technique have a little damnification on the skin - deep structure for the cdte thin films, among the experiment, we have let the doped cdte thin films be annealed a hour with n2 atmosphere at 500, and then slowly cooled until the room temperature. via the test and analyse, heat treatment has very important effect on the comeback of crystallattice surface disfigurements. finally, the films were characterized by x - ray diffraction ( xrd ), scanning electron microscopy ( sem ), ultraviolet visible ( uv ) and the hall effect measurement
再次，由於離子注入會對薄膜表面的結構造成損傷，本實驗把被注入離子的cdte薄膜在n2氣氛中500下退火1個小時，然後緩慢冷卻至室溫。經測試分析，熱處理對晶格表面缺陷的恢復有很重要的作用。最後，利用xrd 、 sem 、紫外可見分光光度計及hall測試系統研究其結構，表面形貌和光電性能。Aimed at the helium damages in plutonium caused by a decay, he + ions were implanted in aluminum and the behaviors of helium in aluminum were investigated both theoretically and experimentally to simulate those effects in plutonium. at the same time, the diffusion of helium - 3 produced by tritium decay in stainless steels, which were served as the structural materials in tritium and fusion technologies, was also investigated in this thesis
針對放射性元素鈈的衰變引起的氦損傷問題，選擇模擬材料鋁進行了he的離子注入和其中氦行為的理論和實驗研究，同時，也研究了氚工藝及聚變堆技術結構材料不銹鋼中氚衰變~ 3he的擴散行為，從而對兩種金屬中he的行為有了較深入的認識。Experimental results revealed that the carrier mobility increased with increasing of the annealing temperature, in the range of the annealing temperature from 650 ? to 850 ?, which implied that the crystal lattice structure was damaged by ion implantation and restored after annealing. furthermore, the square carrier concentration decreased, and the square resistance of the samples implanted by mn + and c increased with the raising of annealing temperature. these results indicated that the second phase such as mnga, mnas ferromagnets was formed by more mn + ions with increasing of the ( gaas ) annealing temperature, so the mn + ions which can provide carriers decreased
由實驗結果可以知道在退火溫度為650 850范圍內，樣品的載流子遷移率隨著退火溫度的提高呈上升趨勢，說明雜質元素的注入對樣品造成晶格損傷，但退火對這些損傷具有修復作用；此外，隨著退火溫度的上升，樣品的方塊載流子濃度不斷下降，加c樣品的方塊電阻不斷上升，這都是因為隨著退火溫度的提高，摻入的mn ~ +離子不再提供載流子，而是形成了mnga 、 mnas等磁性第二相。At first, we investigated the photoluminescence characterization of theion - implanted samples by spectroanalysis, found that the ion implantation would damage the crystal lattice structure and affect the optical radiation of characteristic. moreover, the crystal lattice structure will be restored after annealing, which can be determined by the change of fluorescence peak intensity and blue migration of wavelength
發現mn ~ +離子、 c離子的注入都會損傷樣品的晶格結構，從而影響樣品的發光特性，而退火處理對這些損傷有一定的修復作用，這可以從發光峰強度的變化及波長的藍移來判定。分享友人