離子注入法 的英文怎麼說

中文拼音 [lízizhùrùfǎ]
離子注入法 英文
ion implantation
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 注 : Ⅰ動詞1 （灌入） pour; irrigate 2 （集中） concentrate on; fix on; focus on 3 （用文字來解釋字句）...
  • 入 : Ⅰ動詞1 （進來或進去） enter 2 （參加） join; be admitted into; become a member of 3 （合乎） conf...
  • 法 : Ⅰ名詞1 （由國家制定或認可的行為規則的總稱） law 2 （方法; 方式） way; method; mode; means 3 （標...
  • 離子 : [物理學] ion
  • 注入 : pour into; empty into; inpouring; injection; infusion [拉丁語]; infunde [法國]; abouchement; influxion
  1. The effects of various mutagenic agents on the productivity of avermectin by slreplomyces avermilitis were evaluated in this work. three different mutagenic breeding methods were developed, such as ntg, uv, ion implatation

    在育種研究中應用了離子注入、亞硝基胍和紫外線誘變方法，並對這幾種誘變方法進行了比較，發現離子注入的誘變效果最好。
  2. In the current experimental parameter range, thin and / or ultra - thin soi with thickness of 50 - 150nm and box of 70 - 180nm thick were obtained. compared to the conventional simox - soi, the soi materials manufactured by water plasma ion implantation at the same implantation dosage and ion energy have much thicker box layers

    本論文一個重要發現是以水等離子體離子注入方式所形成埋層sio _ 2厚度得到了大幅度的展寬，相比傳統simox法，其展寬幅度高達50 ，這一重要發現為降低注入時間和soi制備成本提供了有效的途徑。
  3. The aim of the thesis was that the pure cdte thin films were adulterated by the influx technique with different metals, and then we have investigated its configuration and photoelectricity after the anneal treatment

    目前，用離子注入的方法在cdte薄膜中摻雜的文獻報道的很少。本工作目的就是採用離子束注入的方法對純cdte薄膜進行不同金屬元素的摻雜及熱處理，研究其結構和光電特性。
  4. By using arabidopsis thaliana as material, the study had been focused on the ion beam implantation - induced effects and the changes of the configuration. with the rapd method and the analysis of the pod, the mechanism in molecular biology and physiology were stated

    以擬南芥為對象做離子注入的物理誘變，觀測記載了離子束注入后供試材料的形態性狀變化，利用rapd方法探討了引起形態性狀誘變的分子機理，結合同工酶分析結果，分析了離子束輻照引起的生理誘變效應。
  5. Surface chemical analysis - secondary - ion mass spectrometry - determination of relative sensitivity factors from ion - implanted reference materials

    表面化學分析.次級離子質譜法.測定離子注入標樣的相對靈敏系數
  6. Moreover, we observed the concentration profiles of the ion - implanted samples and the diffused samples by c - v method, and discovered that the carrier concentration decreased with increasing of the diffusion depth. whereas, the peak concentration of the ion - implanted samples located at 0. 248151 u m beneath the surface and the peak concentration of the diffused samples located at the surface. furthermore, the carrier concentration of mnas source diffused sample as high as 102 % m3can be obtained, and the surface was much smoother compared with that of the pure mn source diffused sample

    發現兩種摻雜方法的載流子濃度大體上都是隨著擴散深度的增加而下降，不同的是離子注入樣品的載流子最高濃度處于離表面深度0 . 248151 m處，而擴散樣品的載流子最高濃度處于表面，並摻錳（ mn ）砷化鋅（ gaas ）材料性質的研究且還發現相對于純mn源擴散樣品來說， mnas源擴散樣品的表面較為光滑，且表面載流子濃度高達1020 cm 』數量級。
  7. It was reported that the secondary phase of mnas has been found in gaas substrate by mn - implanted and subsequent rapid thermal annealing

    有報道稱採用離子注入的方法將mn ~ +注入到gaas單晶襯底中，經過快速熱退火處理后，發現在晶體中生成了mnas第二相。
  8. Lastly, the rapd method make the effects of the ion beam irradiation induced the arabidopsis thaliana dna clear. and in the molecule level explain the results of the different doses act on the arabidopsis thaliana dna and the molecule mechanisms

    利用rapd方法揭示了離子注入對擬南芥dna多態性的影響，並在分子水平上揭示了輻照的不同劑量對擬南芥遺傳多態性的影響，闡明了離子誘變的分子機制。
  9. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  10. Mg ions were implanted on mg - doped gan grown by metalorganic chemical vapor deposition. the p - type gan was achieved with high hole concentration 8. 2810

    應用mg離子注入mocvd法生長摻雜mg的gan中，在經過800 ， 1h的退火后，獲得高空穴載流子濃度8 . 2810
  11. The c - bn thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system. the c - bn / si thin film heterojunctions have been fabricated with doping into n - type ( p - type ) semiconductor by implanting s ( be ) ions into them. i - v curves of bn / si heterojunctions were obtained by the high resistance meter, c - v curves of bn / si heterojunctions were obtained by the c - v meter

    使用rf射頻濺射系統，在si襯底上沉積氮化硼薄膜，用離子注入的方法在制備好的bn薄膜中分別注入s和be ，成功的制備了bn / sin - p和bn / sip - p薄膜異質結，用高阻儀測得bn薄膜表面電阻率和bn / si薄膜異質結的i - v曲線，用c - v儀測得bn / si薄膜異質結的c - v曲線。
  12. 3. to avoid the high temperature process in sige cmos technics, appropriate implantation energy and dose and rtp ( rapid thermal anneal ) are introduced into the the fabrication of sige cmos double - well and source

    3 .研究了離子注入法形成sigehcmos的雙阱及源漏工藝。確定了注入的離子類型、劑量、能量等關鍵參數。
  13. In this paper, we used different doping means to prepare the mn - doped gaas material. firstly, we incorporated mn of different dose into gaas by ion implantation, including the couple - ion implantation with mn + and c, then performed rapid thermal annealing in different temperature. furthermore, we incorporated mn into gaas using different mn sources ( pure mn and mnas ) by diffusion

    本論文利用不同摻雜方法進行了摻mngaas這種dms材料樣品的制備，首先利用離子注入法對砷化鎵（ gaas ）材料進行不同劑量的錳（ mn ~ + ）離子注入，其中包括加碳（ c ）的雙離子注入，然後在不同溫度下進行快速退火處理；此外還利用擴散法對gaas晶片進行不同mn擴散源（純mn 、及mnas ）的摻雜。
  14. ( 3 ) dlc films were prepared by combining psii method with pecvd method, the films got not only smooth surface morphology but also strong adhesion, in such a fashion that it was the best method

    （ 3 ）通過全方位離子注入和等離子體增強化學氣相沉積相結合，發現制備出的類金剛石薄膜既改善了表面形貌又增強了結合力，因此證明了這是一種較好的制備方法。
  15. Polycrystalline diamond films were deposited on n - type si substrates. in order to achieve a better distribution of the implanted element, boron ions were implanted by two steps. the i - v curves were studied, the p - n junction effect is very evident

    在n型引襯底上沉積一層連續的金剛石膜，通過二次離子注入的方法使b離子比較均勻的分佈在金剛石膜中，通過測量i - v曲線，可以明顯的看出p - n結效應的存在。
  16. We also studied pld derived ba0. 8sro0. 2tio3 thin film capacitor for the application of dram

    採用組合集成離子注入的方法摻bi提高了bst薄膜的介電性能。
  17. In this paper, we implanted mn + ion of different dose into undoped semi - insulating ( 100 ) gaas substrate then performed rapid thermal annealing in different temperature and time. studied the different annealing condition dependence of the samples " structure, electrical and magnetic properties and the relation of the mn + forms and these properties

    本課題採用離子注入的方法將不同劑量的mn ~ +注入到非摻雜半絕緣（ 100 ） gaas單晶襯底中，然後進行不同溫度和時間的快速熱退火處理，研究了不同的退火條件對樣品注入層的晶體結構、電特性和磁特性的影響以及mn ~ +在樣品中的存在狀態與這些性質之間的關系。
  18. Coating cracks and defects are main reasons for the limited oxidation resistance of sic - c / sic. in this thesis, surface modification of sic coating was carried out with physical vapor deposition ( pvd ) and ion implantation & deposition, using al, b and si. effects of the modified coatings on the oxidation resistance of sic - c / sic were studied with sem, xrd and aes and so on

    本文採用了物理氣相沉積方法和離子注入沉積方法，以al 、 b 、 si為改性元素，對sic塗層表面進行改性，封填裂紋和缺陷；結合掃描電鏡（ sem ） 、 x射線衍射（ xrd ）和俄歇能譜（ aes ）分析，研究了改性層對sic - c sic復合材料抗氧化性能的影響。
  19. We also investigated the effect of c on the samples formed by ion implantation of mn and c. we studied the samples " crystal structure and surface appearance by x - ray diffraction and afm, experimental results revealed that with increasing the annealing temperature, the crystal lattice reformed and defect in the surface reduced gradually

    還進行了mn ~ + 、 c雙離子注入，研究了c對樣品性質的影響。利用x -射線衍射法和原子力顯微鏡對樣品的晶體結構和表面形貌進行了研究。發現隨著退火溫度的升高，樣品的晶格質量得以恢復；注入表面形成的晶格缺陷逐漸減少。
  20. We have investigated the influence on the character of cdte thin films with different conditions and parameters. secondly, in normal temperature, cdte thin films are high resistance semiconductor, for improving its electricity capability, we commonly inject benefactor or acceptor impurities into the pure cdte thin films, the ion influx technique is a good method among many adulteration means. at present, the literatures on the doped cdte thin films by the ion influx technique have a fat lot reports

    本論文首先採用近距離升華法在不同基片上制備cdte薄膜，研究了不同工藝條件和參數對cdte薄膜性質的影響。其次，在常溫下，本徵cdte薄膜均為高阻半導體。為了改善其導電性能，通常向cdte薄膜中摻入施主或受主雜質，其中離子注入技術是摻雜方法之一。
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