離散電晶體 的英文怎麼說

中文拼音 [lísǎndiànjīngtǐ]
離散電晶體 英文
discrete transistor
  • 離 : Ⅰ動詞1 （離開） leave; part from; be away from; separate 2 （背離） go against 3 （缺少） dispens...
  • 散 : 散動詞1. （由聚集而分離） break up; disperse 2. （散布） distribute; disseminate; give out 3. （排除） dispel; let out
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 離散 : dispersed; scattered about; separated from one another; spread; debunching; straggling; fringing;...
  • 電晶體 : bjt
  1. Eddy - current sensor conversion circuit consist amplification circuit, band - pass filter circuit, demodulation circuit, differentiation phase and data sampling circuit. these circuits are used to convert the test signal of eddy - current sensor to discrete signal tend to process. the microprocessor system that formed of dsp chip is used to data fitting of test system, data displaying and data communicating with personal computer, etc. the interference questions of hardware design and the measure of eliminating interference signal in the subject are introduced in the last of this chapter

    硬體電路的設計主要分三大部分來實現：激勵源電路部分，由分頻電路和頻率合成電路組成，產生頻率穩定的激勵信號以確保檢測任務的正常進行；傳感器變換電路部分，由放大電路、濾波電路、檢波電路、鑒相電路和數據採集電路組成，主要將電渦流傳感器檢測線圈檢測到的信號變換成只含有被測信息的離散信號，易於后續電路處理；由dsp晶元構成的微處理系統，主要完成檢測系統的數據擬合、顯示及與主機通信等功能。
  2. The effects of the fabrication conditions on the crystal structure, grain size, micromorphology and electrochemical performance of these materials have been studied in depth. the reaction mechanism of the low - heating solid - state reaction method has also been investigated. in addition, a novel electrochemical method ( rpg method ) based on the concept of " ratio of potentio - galvano - charge capacity " has been for the first time developed to determine the diffusion coefficient of lithium - ion within insertion - host materials on the basis of the spherical diffusion model

    本論文較系統地考察了低熱固相反應法合成鋰離子電池正極材料的可行性問題，研究了工藝條件對材料的晶體結構、晶粒尺寸、微觀形貌及電化學性能等的影響，探討了低熱固相反應的機理，並通過引進「恆壓-恆流充電容量比」的概念，給出了一種測定鋰離子嵌入脫出固相擴散系數的新方法。
  3. The result of transmission electron microscope ( tem ) showed that layers of layered silicates were exfoliated and dispersed in matrix homogeneously. according to statistical data, average thickness of layers was lonm, and the thickness of the biggest layers was less than 40nm, only a few layers were exfoliated in monolayer whose thickness was about inm

    透射電子顯微鏡（ tem ）照片顯示：層狀硅酸鹽片層發生剝離，片層均勻分散在nbr基體中，統計表明片層的平均厚度約為10nm ，最大的聚集體的片層厚度達到40nm ，推斷有一小部分片層剝離成單晶層的形式，厚度為1nm 。
  4. The voltage of lithium - intercalation reaction, impedance and structural stability of intercalation - type cathode material were analysed and calculated. theoritical results show that the reaction voltage depends on the content of lithium and the bond energy, and that the key ways to lower the electrode impedance are to increase the electronic conductivity of the electrode and the diffusion coefficient of lithium ion in the host and to decrease the size of powder. in addition, the thermal stability of lithium - insertion structure can be improved by using crystallographic co - lattice theory and doping treatment

    本文從嵌入式陰極材料的嵌鋰反應的電壓、阻抗及結構穩定性的分析和理論計算著手，得到了電壓取決于基體中各種離子間的鍵能及鋰含量、降低電極阻抗的關鍵是提高電子型導電性和li ~ +在基體中的擴散系數及減小粉末粒度的理論依據及其利用晶體的共格原理和摻雜改性的方式來提高材料嵌鋰結構的熱穩定性的設計思路。
  5. The performances of multicrystalline silicon solar cells were improved after porous silicon heavy phosphorous diffusion passivation and low frequency plasma hydrogen passivation

    通過多孔硅重磷擴散鈍化及低頻等離子體氫鈍化等多晶硅太陽電池晶界鈍化，改善了太陽電池性能。
  6. We have many industry automize instruments such as temperature transmitter ( integrate temperature transmitter module ( double temperature transmitter module ), integrate temperature transmitter, track isolation temperature transmitter, hanging temperature transmitter, pressure transmitter ( expanding silicon pressure transmitter, sapphire pressure transmitter, spraying ( metal slim film ) pressure transmitter, strain pressure transmitter, ceramic resistor, capacitance pressure transmitter, 1151 and 3151 series pressure transmitter, fluid location transmitter module ( specializing for fluid location meter ), collocated electricity meter ( sigle round, double round ), signal isolation ( single round, double round ), transducer ( temperature, pressure ), display head ( showing 100 % scale, lcd fluid crystal, led digital display ), numerical instrument and so on

    產品有溫度變送器（一體化溫度變送器模塊（雙支溫變模塊） 、一體化溫度變送器、導軌式隔離溫度變送器、壁掛式溫度變送器、架裝式溫度變送器） 、壓力變送器（擴散硅壓力變送器、藍寶石壓力變送器、濺射式（金屬薄膜）壓力變送器、應變式壓力變送器、陶瓷電阻、電容壓力變送器、 1151 、 3151系列壓力變送器） 、液位變送器模塊（專為液位計廠配套） 、配電器（單迴路、雙迴路） 、信號隔離器（單迴路、雙迴路） 、傳感器（溫度、壓力） 、配變送器的顯示表頭（ 100刻度顯示、 lcd液晶顯示、 led數碼顯示） 、數字儀表等工業自動化儀器儀表。
  7. After finished the cyclic voltammetry experiments, the results showed that iron steel grid can act as good current collector in the aqueous electrolyte. while the scan rate was fall in the range of 0. 5 - 4. 0mv / s, electrochemical reaction of the lithium insertion / extraction in the solid phase was kinetically limited by the diffusion of lithium ions. after 40 cycles in aqueous electrolyte the discharge capacities of sample of s13 reached 77mah / g, and showed good cycle performance

    在水溶液中不銹鋼網可以作為電極的集流體，在0 . 5 - 4 . 0mv / s的掃描速度范圍內，鋰離子在尖晶石鋰錳氧化物的嵌入和脫嵌的電化學反應在動力學上是受鋰離子在固相中的擴散所控制，充放電實驗顯示樣品s13在水電解液中經過40個循環后達到77mah / g的放電容量，具有很好的循環穩定性。
  8. The company mainly produces high - tension and low - tension electric equipment, thyristors electrical machinery soft starter, automatic regulating silicon piles etc. it developed the technology with own patent adopting sun shape heat tube radiators with steam and water separated, and developed the integrated power module unit including thyristors and rectifiers with the technology. the products organization is novel, and it conducts heat rapidly and has solved the difficult problems of heat dissipation in generator excitation and exchange power

    公司主要生產高低壓成套電器低壓動態無功補償裝置晶閘管電機軟啟動自動調壓硅堆等產品。研製開發出了「日」字形汽水分離式熱管散熱，並利用該技術開發了晶閘管整流管一體化功率組件，結構新穎，傳熱迅速，為發電機勵磁交流調功等領域解決了器件散熱難題，產品的各項性能均處于國內外領先水平。
  9. A solid - state shear compounding technology based on pan - milling ( s3c ) has established, by which the graphite with weakly combined structure are exfoliated and then compounded with pp at nanoscale. the obtained pp / graphite nanocomposites have greatly enhanced electrical and thermal conductivity. their structures and properties were characterized by analysis of particle size and distribution, sem, tem, xrd, the electrical conductivity, the thermal conductivity and heat - decomposition temperature etc. by taking advantages of the layered inorganic fillers with a weak interaction between layers ( e. g

    磨盤碾磨剪切力場使pp分子鏈斷裂，相對分子質量減小，石墨的導熱和潤滑性能抑制pp的降解和粉碎，使pp / yep250 （膨脹石墨250倍）復合粉磨盤碾磨固相剪切復合技術及導電導熱pp /石墨納米復合材料的制備與性能體中， pp分子運動活性提高，結晶能力增強，為pp在熔融加工中進一步向己剝離的石墨片層間擴散，形成納米復合結構創造了條件。
  10. In the course of design, we fully consider the actual conditions on the railway and take a series of corresponding measures to the concrete problem. such as we select high - accuracy microconvertor and have the converted function in succession data collecting system chip aduc812, design v / f circuit and external a / d circuit. in anti - interference of the hardware, we try to disperse each function module to avoid interfering each other, adopt photoelectric isolated technology to dispel the circuit connection of input and output. in controlling we import arithmetic mean into strain wave algorithm and real computing technology of virtual value for sample treatment of data, that is using the software to smooth away interfere error and to calculate actual value, thus it makes the precision of the data improve greatly

    在設計過程中，根據系統要求，充分考慮鐵路上的實際情況，針對具體問題採取了一系列的相應措施，如在器件選擇方面選用高精度microconvertor系列、具有adcdma連續轉換功能的數據採集微控制器晶元aduc812 ，設計了v f變換電路和外部a d轉換電路；在硬體抗干擾方面，將每個功能模塊盡量分散獨立開來以避免相互干擾、採用光電隔離技術消除輸入輸出通道上的電路聯系；在控制方面對于采樣數據的處理引入了算術平均值濾波演算法和真有效值的計算方法，即通過使用軟體來濾除系統中有干擾造成的誤差並計算真值，從而使數據的準確性得到極大地提高。
  11. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
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