電勢阱 的英文怎麼說
中文拼音 [diànshìjǐng]
電勢阱
英文
potential energy well-
To analysis the principle of degradation and destruction, a reasonable relationship between the electrostatic potential and 1 - v characteristic parameters is raised ; a computation model for electron trap effect is originally proposed, which leads to a conception of critical trap electron density
本文首次建立了晶界勢壘高度與伏安特性參數之間的關系，提出了陷阱效應在沖擊老化過程的作用模型，引入了「臨界陷阱電荷密度」的概念。Gaas / algaas quantum well photodetectors ( qwips ) are new type devices and progressed rapidly in recent 20 years. qwips utilizing intersubband absorption between gallium arsenide ( gaas ) well and aluminum gallium arsenide ( alxga1 _ xas ) barriers were perfected. therefore, the ability to accurately control the band structure and hence the spectral response, as well as both established technology for growing and processing gaas optical devices and commercially available large area vlsi gaas ic ' s, makes gaas / algaas qwips attractive devices for use in very large focal plane arrays ( fpas ), especially available in the range of long wavelength 8 - 12 urn
Gaas algaas量子阱紅外探測器（ qwips ）是近二十年來迅速發展起來的一種新型紅外探測器，它成功地利用了gaas勢阱和al _ xga _ （ 1 - x ） as勢壘之間的子帶間吸收，使之具有能帶結構可精確設計從而獲得指定光譜響應的特點，加之成熟的材料生長技術、器件工藝，以及商業上可獲得大面積的vlsigaas集成電路，使得gaas algaasqwips尤其適宜製作8 12 m長波范圍的大面陣探測器。However, it becomes independent on channel depth in strong inversion region, which is in accordance with numerical analysis
結果進一步顯示，只考慮方形勢阱的量子力學結果，略高估計了閾電壓，且低估了電子密度。( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased
（ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。Carrier will be capture by trap, the number of electric carrier will decrease. the trap hold back carrier to move from crystal to other crystal. it influences the electrical properties of tft
陷阱在浮獲載流子之前是電中性的，但是在俘獲載流子之後就帶電了，在其周圍形成一個多子勢區，阻擋載流子從一個晶粒向另一個晶粒運動，導致載流子遷移率下降，導致tft的電學性能下降。The effect of an applied electric field on the binding energy of shallow donor impurities in rectangular cross section gaas qwws was presented by montes et al, by considering an infinite confinement potential and using a variational scheme
外加電場對矩形量子阱線中淺施主雜質束縛能的效應是由montes等人提出的，他們採用變分法討論了無限深勢阱的量子線結構。Under a unified model of carrier transport over trap state established potential barrier at drain side, device degradation behavior such as asymmetric on - current recovery and threshold voltage degradation can be understood
我們通過載流子在漏極附加陷阱態勢壘的輸運模型，解釋了器件在應力后出現的閾值電壓的退化現象和非對稱性開態電流恢復現象。The performance of modulators employing mqw is governed by the quantum confined stark effect. in order to simplify the analysis of mqw, we obtain an explicit formula concerning the correlations between the gaas / gaalas quantum well widths of finite potential barrier structure and those of infinite potential barrier structure under the condition that the ground state energies are equal at zero bias states. then the transfer matrix method is used to investigate the optical field distribution in the mqw waveguide based on five - step asymmetric coupled quantum well structure that is really used in the modulator
本論文首先根據量子限制stark效應，發展了等效寬度思想，提出了把單量子阱結構的有限深勢阱的分析轉化為無限深勢阱模型的顯式公式，從而大大簡化了電場下量子阱結構的分析；接著利用轉移矩陣，把周期性的量子阱結構簡化為三層結構，得到了實際採用的非對稱三阱結構量子阱的場分佈，並討論了量子阱結構的偏振特性。( 3 ) the electric field breaks the energy degeneracy for symmetrical impurity position in the well, the results show that the redshift and blueshift of the impurity stark energy shift as the impurity position. ( 4 ) under the same external electric field, the impurity stark energy shift is obviously different with the different aspect ratio of the quantum well wires
（ 3 ）當施主離子位於勢阱中不同位置時，零電場下量子阱線中的雜質態是關于施主離子位置中心對稱的簡並態，在外加電場作用下發生能級分裂，這種簡並不再存在;雜質的stark能移由於施主離子位置的不同表現為紅移或藍移。Abstract : we conduct a theoretical study on the properties of a bound polaron in a quantum well under an electric field using linear combination operator and unitary transformation methods, which are valid in the whole range of electron - lo phonon coupling. the changing relations between the ground - state energy of the bound polaron in the quantum well and the coulomb bound potential, the electric field strength, and the well width are derived. the numerical results show that the ground - state energy increases with the increase of the electric field strength and the coulomb bound potential and decreases as the well width increases
文摘:採用線性組合算符及幺正變換方法研究了電場對量子阱弱耦合束縛極化子的性質的影響.推導出量子阱中束縛極化子的基態能量和庫侖束縛勢、電場和阱寬的變化關系.數值計算結果表明，基態能量因電場和庫侖束縛勢的不同而不同，隨電場和庫侖束縛勢的增大而增大，隨阱寬的增大而迅速減小Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps
通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。It has two following important properties : one is optical storage, that is, optical signals can be stored in trap electron form for long time, the other is infrared up - conversion, that is, it can convert infrared to visible light at room temperature
其具有以下兩個重要特性： 1 ）光存儲：能將光信號以陷阱電子形勢長期穩定存儲； 2 ）紅外上轉換：室溫下可將紅外光轉換為可見光。In the effective mass approximation, using the two - dimensional equivalent potential model and a simple two - parameter wave function, we calculate variationally the ground state binding energy and correlation energy of positively and negatively charged excitons in finite deep gaas - al0. 33ga0. 67as quantum wells. the results show fair agreement with the previous experimental results
在有效質量近似下，我們採用二維等效勢模型，並且選取了數學形式簡單、物理意義明確的兩參數變分波函數，利用變分法數值計算了有限深gaas ? al _ （ 0 . 33 ） ga _ （ 0 . 67 ） as量子阱中帶電激子的基態束縛能及相關能，所得結果與實驗結果符合得很好。The changing relations between the ground - state energy of the bound polaron in the quantum well and the coulomb bound potential, the electric field strength, and the well width are derived
推導出量子阱中束縛極化子的基態能量和庫侖束縛勢、電場和阱寬的變化關系。The numerical results show that the ground - state energy increases with the increase of the electric field strength and the coulomb bound potential and decreases as the well width increases
數值計算結果表明，基態能量因電場和庫侖束縛勢的不同而不同，隨電場和庫侖束縛勢的增大而增大，隨阱寬的增大而迅速減小。分享友人