電化蝕刻 的英文怎麼說
中文拼音 [diànhuàshíkè]
電化蝕刻
英文
electrochemical etching-
The silicon plates are formed reverse four wimble array in koh solution by wet - etching technology. then the electrochemical etching experiments are done in three poles electrobath. and some technology questions such as heat oxygenation, light etching, wet etching and electrochemical etching have been analyzed. at the same time sample appearances are analyzed by scanning electron microscope. according to current burst model theory, the electrochemical deep holes etching mechanism are analyzed
在三極電解槽中，進行了電化學深刻蝕的探索性實驗。對氧化、光刻、濕法刻蝕和電化學刻蝕中的工藝問題進行了初步的理論和實驗研究，同時，採用sem對實驗樣品進行了形貌分析，並採用電流突破模型對電化學深孔刻蝕機理進行了理論分析。A large number of attempt and painstaking experiment have been done in this paper according to existing project. we also do lots of chemical and electrochemical etching research in material of lab6, and find out three kind of methods to produce the field emitting cold cathode including reactive ion etching ( rie ) with oxygen, wet process etching and electrochemical etching. through produce some field emitting cold cathode single tip including lab6 field emitting cold cathode, molybdenum field emitting cold cathode, tungsten field emitting cold cathode, tungsten rhenium field emitting cold cathode, molybdenum covered with lab6 film field emitting cold cathode
而且，目前可借鑒的參考文獻較少，圍繞著前人做過的方案，本文做了大量工作，在已有文獻介紹的基礎上，結合原有的理論和實踐基礎，摸索出了包括高溫氧作用反應離子（ rie ）刻蝕法、濕法腐蝕法和電化學腐蝕法在內的三種制備工藝，運用電化學腐蝕工藝成功制備了單尖的六硼化鑭場發射冷陰極尖錐、鉬場發射冷陰極尖錐、鎢場發射冷陰極尖錐、鎢錸合金場發射冷陰極尖錐以及有六硼化鑭薄膜覆蓋的鉬場發射冷陰極尖錐。The studies expressed that the tensile - strength declined with the growth of dose rate after the radiation treatment, and at the same time, the gel content had extreme value with the change of the dose rate. the surface of uhmwpe fibers showed some irregular micro - pits and dents after radiation treatment, narnely rough degree increasing. their number and deepness increased with increase of dose. and this phenomenon is the most obvious when the dose rate was 8. 5kgy / s and the dose was 400kgy. at the same time some containing oxygen groups, including hydroxyl group, carbonyl group and carboxyl group, were introduced into the fiber surface which was exposed to the air
研究表明， uhmwpe纖維經電子束輻照處理后，纖維的拉伸斷裂強度隨劑量率的增加呈下降趨勢，凝膠含量隨著劑量率的變化存在極值。纖維表面出現了不規則的微裂紋和凹痕，隨著劑量的增大，電子束對纖維表面的刻蝕程度增加，在本研究中以劑量為400kgy劑量率為8 . 5kgy s時刻蝕效應最為明顯。同時，在空氣中進行輻照時，纖維表面被引入了一些含氧基團，包括羥基、羰基和羧基。A different approach, named " two step growth approach " has been applied to fabricate an 8x8 photodiode array in the first time. the micro - processing procedures of this photodiode array including standard photolithography, a number of metallisation, wet - chemical etching and sic2 deposition for insulation were developed in this study
首次採用「兩步法」制備出了新穎的8 8zns肖特基光電二極體陣列，詳細研究並確定了制備該器件的標準光刻、金屬沉積、濕化學腐蝕、 sio _ 2絕緣層沉積等一系列微電子處理工藝。Rf plasma system 9200 is a barrel - type batch stripping system with optional high temperature capabilities for photoresist removal, nitride etch, and other cleaning applications in semiconductor and mems fabs
射頻等離子體9200是桶式爐脫模體，擁有可控制的高溫系統可去除光阻材料、氮化物蝕刻和半導體與微型機電系統等方面的清洗功能I understand the circuits are etched into the wafer by repeating the photolithographic process of light exposure and chemical treatment
我知道這些電路是通過照相平板印刷法的曝光和化學處理蝕刻到晶元上的。In a word, the two type of voa both have valuable applicability and potential market. the author have done numerous processing to work out new processing such as polymer coating and cure and triple - layer - metal film vaporing. other new processing, polymer ultra - violet ( uv ) cure and inductively - coupled plasma ( icp ) etching were studied
作者經過反復的工藝實驗，確定了聚合物波導塗膜和固化、三層金屬電極蒸發和腐蝕等新工藝的參數，並得到了聚合物紫外固化、等離子體刻蝕等新工藝的初步數據。Corundum mullite product adoprs electrocast refractories. through high pressure formation and high temperature burning, this product has comparatively high refractoriness, mechanical strength and slftening temperature under load. it can be widely used as inner lining. of various industrial furnace under such hard working conditions as high temperature, flushing and erosion
剛玉莫來石製品是採用電熔合成原料，高壓成型，高溫燒成的具有較高耐火度及機械強度，較高荷重軟化濁的可廣泛應用於各類工業爐高溫、沖刷、侵蝕條件較苛刻的窯爐內襯的耐火製品。Then based on the principle for pcr, 20 - cycle continuous - flow pcr is designed using cad software. to the designed 20 - cycle continuous - flow pcr chip, a krf excimer laser ( direct write method ) is adopted as the fabrication technology, and the polymethyl methacrylate ( pmma ) is selected as the substrate. so the appearances of pmma surface etched before and after by 248nm excimer laser under different incident fluences are analyzed using sem
為此在應用掃描電鏡和三維形貌分析儀對pmma表面被準分子激光刻蝕前後的形貌、刻蝕粗糙度以及單脈沖刻蝕率等進行詳細分析的基礎之上，總結出了準分子激光刻蝕pmma的宏觀規律和微觀刻蝕機制，提出了一種準分子激光刻蝕pmma的是光熱光化學以及羽輝共同作用的理論解釋。Etching time has been extended in wet etching course
在電化學刻蝕過程中，需增加循環裝置。Finally, according to the technique of plasma etching, an evolution model describing the spatio - temporal profiles of the micro - trench is established. and that we simulated the effects of collisions and the source parameters on the etching profiles
最後，針對等離子體刻蝕工藝，建立了微結構區剖面的時空演化模型，並模擬了碰撞效應和電源參數對刻蝕剖面演化的影響。The oxidizing parameters of the anodization in the following experiments were preferred on the basis of measuring the dependence of pl properties ( peak position, and max intensity, etc. ) on anodization conditions, such as the anodizing current density, the time of the anodization, the concentration of the solution ( mainly of hf ), and on the doping level of the substrate
刻蝕時間、刻蝕液配比及襯底電阻率對pl發光強度、峰值波長等性質的影響。在此基礎上優化出制備多孔硅的具體參數。對不摻sb與摻sb的snci 。Device processing : etching. surface passivation ; dielectric films
元件製程：蝕刻，表面鈍化，介電材料薄膜。Micro - channel electrophoresis chip ( mce chip ) system is a newly developed research field. the micro - channel network on the chip is manufactured by the technology of micro opto electro mechanical system ( moems ) on the substrate of glass, fused silica, pdms etc. sample separation is performed in the micro - channel and detected by opticcal or chemical methods
微通道電泳晶元（ micro - channelelectrophoresischip ， mcechip ）系統是利用微光機電系統（ moems ）技術在玻璃、石英、有機聚合物等基片上刻蝕出預設計好的微通道網路，並在其中進行樣品的電泳分離，利用光學或化學等方法進行檢測。分享友人