電壓上升 的英文怎麼說

中文拼音 [diànyāshàngshēng]
電壓上升 英文
voltage build up
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 壓 : 壓構詞成分。
  • 上 : 上名詞[語言學] （指上聲） falling-rising tone
  • 升 : Ⅰ動詞1 （由低往高移動） rise; hoist; go up; ascend 2 （等級提高） promote Ⅱ量詞1 （容量單位） lit...
  • 電壓 : voltage; electric tension; electric voltage
  1. Helicopters in action " is about to take you on an adventure around the world from sierra leone, where you ll participate in delivering humanitarian aid in the largest helicopter in the world, to miami for a wild ride in a black hawk helicopter intercepting drug runners. hold on while you swing through the air with five marines dangling from a rope attached to a ch - 46 flying over the atlantic and swoon as a cobra swoops low over enemy territory. try not to slip as you traverse 500, 000 - volt high wires

    全天域電影直升機行動組將會帶你參與周遊列國的歷險旅程：在非洲獅子山你會乘坐全球最大型的直升機協助人道救援工作在美國邁阿密，你會登上黑鷹直升機截擊毒販又或者與五名美國海軍陸戰隊隊員一起乘坐ch - 46直升機，飛越大西洋上空，並在半空游繩而下或乘坐眼鏡蛇直升機在敵方領空低飛或登上直升機，跳上500 ， 000伏特高壓電纜上進行維修工程或屏息靜氣，緊隨獸醫在南非乘坐直升機在離地面3米的高度，向黑犀牛發射麻醉槍或乘坐直升機跳入驚濤駭浪中參與海難救援工作。
  2. With the aid of baffle movement, a technique named masking pretreatment and the method of vacuum deposition have been used to fabricate the ag - o - cs photoemissive thin films with internal field - assisted structure for the first time. the internal field - assisted photoemission characteristics of ag - o - cs thin films show that the photoelectric sensitivity is increased when the internal electric field is applied to the thin films, which indicates that the electric field has been effectively provided to the thin films by the above - mentioned internal field - assisted structure. such an enhanced photoemission is attributed to the variations in energy - band structure of ag - o - cs thin films, and which are considered to induce the lower - energy electrons to participate in the photoemission

    通過掩膜預處理和擋板轉移技術的配合，利用真空沉積方法首次制備了內場助結構ag - o - cs光電發射薄膜。 ag - o - cs薄膜內場助光電發射特性測試結果表明，該方法能夠有效地實現ag - o - cs薄膜體內電場的加載與表面電極的引出，薄膜光電靈敏度隨內場偏壓的增大而上升。 ag - o - cs薄膜在內場作用下的光電發射增強現象與薄膜體內能帶結構變化低能電子參與光電發射等物理機制有關。
  3. In view of this situation this article has conducted research to the design of metallurgy auxiliary biography with the frequency conversion table electrical machinery first multianalysis to the frequency changer and the frequency conversion table electrical machinery movement characteristic is carried out, the voltage waveform harmonious which the frequency changer outputs is big, attacks in a big way, and the voltage climbing rate reaches as high as 6600v / mu s which is 20 times ordinary sine alternating voltage, the rolling mill auxiliary biography table set the extremely strict request to the electrical machinery ; its movement frequency is very low, rate frequency in 8 - 20hz ; the velocity modulation scope is wide, the lowest movement frequency lowers to 1hz, and the starting number of times is quite frequently, each hour reaches as high as 600 - 800 time, the impact shoulders in a big way, the overload capacity request is high

    針對這一情況本文對冶金輔傳用變頻輥道電機的設計進行了系統研究。首先對變頻器和變頻輥道電機的運行特性進行詳細分析，變頻器輸出的電壓波形諧波大，沖擊大，電壓上升率高達6600v / s ，是普通正弦交流電壓的20倍;軋機輔傳輥道對電機提出了十分嚴格的要求:其運行頻率很低，額定頻率在8 - 20hz ;調速范圍寬，最低運行頻率低到0 . 5hz ，起動次數相當頻繁，每小時高達600 - 800次，沖擊負荷大，過載能力要求較高。
  4. After which, the battery will be charged by large constant current to allow the fast charging. finally, the constant voltage charging is adopted to guarantee the battery was charged to its full capacity. under the condition that the temperature has raised to a certain threshold at the constant current charging stage, the over temperature circuit is performing and it provides a compensation current which switches the system to constant temperature charging mode with the intention of protecting the ic

    即在充電初期採用較小的電流對電池進行預處理，對出現過放電的電池進行修復和保護;然後採用較大的恆定電流對電池充電，實現快速充電的目的;最後採用恆定壓充電，確保電池充滿;在恆流充電階段，當晶元溫度上升到一定程度時，晶元過熱保護電路開始工作，該電路以提供充電補償電流的形式使充電進入恆溫充電模式，對晶元進行保護。
  5. Legislator eric li, convenor of the breakfast group and representative of the accounting sector in the legco, warned that the linked exchange rate would be under pressure in the next five years. moreover, the recent rise in the long - dated forwards was a signal of banks hedging their risks on hong kong assets. if the budget deficit continued and the fiscal reserves kept decreasing, the long - term pressure on the hong kong dollar would become short term

    早餐派召集人、代表會計界的議員李家祥（見圖）警告，這5年內聯系匯率會有壓力，而最近遠期美電扯高，是銀行把資產轉移以避險的訊號，若果香港財赤繼續，儲備不斷下降未能止血，港元的壓力便會由遠期變成近期，到時不單令信貸評級上升，令投資成本增加外，更令港元成狙擊對象。
  6. This paper focuses on ir drop analysis, and the principle of ground bounce analysis is almost the same as it

    本文以irdrop分析為主，接地點電勢上升分析的原理和電壓降分析基本一樣。
  7. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  8. By recharging voltage recharge current vary, and as for the recharge gradually increases, not because of battery heating period and declined slightly

    充電電壓因充電電流不同而異，並隨充電的進行而逐漸上升，到未期因電池發熱而略有下降。
  9. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高
  10. An md 500 helicopter hovers above 500, 000 - volt power lines as a lineman wire walks

    Md 500直升機在五十萬伏特的高壓電纜上空盤旋，接載維修人員檢查電纜。
  11. It ' s high - frequence noise absorption, absorption of noise caused by rapid rise of front and self - reset function have widespread application in imput of supply, for absorption of inductive load switching surge voltage and for protection of two - way thyristor switching device, bypass capacitors, micro - machines and the others

    它所具有的吸收高頻噪聲、前沿快脈沖上升噪聲及自復位功能，使其在電源輸入端、吸收電感性負載開關浪涌電壓、保護雙向可控開關器件、旁路電容器、微型電機等方面有著廣泛的用途。
  12. The chemiosmotic hypothesis describes the stomatal opening as a process in which the osmotic materials, mainly potassium, accumulate in guard cells, and as a result of the increase of osmotic pressure and the absorption of water into guard cells the stomata are driven to open. the energy for trans - membrane transport of k + is the hyperpolarized potential across plasmalemma, which is established by the proton extrusion

    化學滲透假說認為氣孔開放是由外來滲透物質（主要是k ~ + ）等在保衛細胞中的累積造成的滲透壓上升所致，而離子跨膜運輸的動力是誘導氣孔開放的因子引發的保衛細胞向胞外泵出質子所造成的超極化膜電位。
  13. Then these separated interferograms can be recorded by ccd camera the experiments with the multi - frame interferometer was carried out on a small gas - puff z - pinch device with 23 kv working voltage and 210 ka peak current and about 2 risetime, and good results were obtained

    該套干涉儀在小型噴氣式z箍縮裝置上進行了實驗， z裝置的工作電壓23kv 、峰值電流210ka 、電流上升時間約2 。根據干涉圖條紋的移動數，可以計算出等離子體的電子密度和運動速度。
  14. The ramp - type sustain waveform is featured with the longer rise - time than the conventional waveform and it is a compromise to let gas discharge with lower cell voltage but still helps accumulate enough wall charges to sustain discharge sequence in cells

    斜緩維持波形的特徵為其電壓上升時間較傳統波形增加了三倍左右，其有助於降低氣體放電時的空間電壓差和累積足量的壁電荷以維持腔體中氣體放電作用得以連續產生的效果。
  15. The buildup of the opposing voltage to its full value requires a longer time.

    反向電壓上升到它的滿值需要較長的時間。
  16. In order to drive a high impedance load such as hpm sources, it is necessary to commutate fcg ' s long pulse width, high - current and low voltage pulse to a short pulse with high voltage

    為用fcg驅動象hpm源這樣較高阻抗的負載，必須使用脈沖功率調制電路把fcg產生的低電壓、大電流、上升時間長的電壓脈沖轉化為高電壓、上升時間短的脈沖。
  17. Secondary voltage rise time

    次級電壓上升時間
  18. A power supply which uses capacitors to store and transfer energy to the output, often stepping the voltage up or down

    用電容器將能量存儲和傳輸到輸出端的電源，通常是使電壓上升或下降。
  19. Maxim offers both regulated and non - regulated charge pumps, as well as ics with on - board charge pumps to boost internal voltages

    用電容器將能量存儲和傳輸到輸出端的電源，通常是使電壓上升或下降。在開關電路和調整器的控制下，電荷從一個電容傳輸到另一個電容。
  20. Voltage build - up rate

    電壓上升率
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