電子束阱 的英文怎麼說

中文拼音 [diànzishùjǐng]
電子束阱 英文
beam trap
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 束 : Ⅰ動詞1 （捆; 系） bind; tie 2 （控制; 約束）control; restrain Ⅱ量詞（用於捆在一起的東西） bundle;...
  • 阱 : 名詞（捕野獸用的陷坑） trap; pitfall; pit
  • 電子 : [物理學] [電學] electron
  1. We creatively apply this way to the bounded polaron in the parabolic quantum well and get the analytical expressions of the ground state energy of an electron bound to a hydrogenic impurity in a parabolic quantum well in an electric field

    我們開創性的把它應用到處理有拋物線量子阱中的束縛極化子，得到了有外電場的量子阱中，類氫雜質中的電子基態能量的解析結果。
  2. The thesis concerns mainly about the bounded polaronic effect in the parabolic quantum well in an electric field

    本論文主要討論了在有外電場時拋物線量子阱中的束縛極化子效應。
  3. We conduct a theoretical study on the properties of a bound polaron in a quantum well under an electric field using linear combination operator and unitary transformation methods, which are valid in the whole range of electron - lo phonon coupling

    摘要採用線性組合算符及幺正變換方法研究了電場對量子阱弱耦合束縛極化子的性質的影響。
  4. ( 2 ) when the impurity in the center of the well, the binding energy of the impurity is decreased as the strength of applied electric field increased

    （ 2 ）當施主離子位於勢阱中心時，雜質的束縛能隨著電場強度的增大而減小。
  5. In the second part, we discuss the binding energy of the impurity in finite gaas / gai. xalxas quantum wire in the first place, in which the dismatch of effective mass and dielectric constant between the well and the barrier is taken into account

    在第二部分，首先討論了有限深gaas ga _ （ 1 - x ） al _ xas量子阱線中雜質態的束縛能，其中考慮到了阱壘中電子有效質量及材料中介電常數的失配性。
  6. In 1985, takeshi kodama et al. [ 12 ] expressed the wavefunction as the combination of the function of the single electron in a one - dimensional square well with the finite barrier to calculate the binding energies of the exciton. this form does n ' t satisfy the continuity of the function and of its derivative divided by the band - mass

    1985年， takeshikodama等人在計算激子的束縛能時把單電子的波函數（ x ， y ）取為一維有限深方形量子阱中波函數的乘積，這種取法在邊界上不滿足波函數的連續性條件及粒子流（ 1 / m ~ * ） ' （ x ， y ）的守恆條件。
  7. The effect of an applied electric field on the binding energy of shallow donor impurities in rectangular cross section gaas qwws was presented by montes et al, by considering an infinite confinement potential and using a variational scheme

    外加電場對矩形量子阱線中淺施主雜質束縛能的效應是由montes等人提出的，他們採用變分法討論了無限深勢阱的量子線結構。
  8. The schemes which are puted forward at ' present have mainly made use of the interaction of atoms and optical - cavity, cold trapped ion, electronics spin or nuclear magnetic resonance, quantum dots manipulation and superconducting quantum interference etc.

    目前已經提出的方案主要利用了原子和光腔相互作用、冷阱束縛離子、電子或核自旋共振、量子點操縱、超導量子干涉等。
  9. Abstract : we conduct a theoretical study on the properties of a bound polaron in a quantum well under an electric field using linear combination operator and unitary transformation methods, which are valid in the whole range of electron - lo phonon coupling. the changing relations between the ground - state energy of the bound polaron in the quantum well and the coulomb bound potential, the electric field strength, and the well width are derived. the numerical results show that the ground - state energy increases with the increase of the electric field strength and the coulomb bound potential and decreases as the well width increases

    文摘:採用線性組合算符及幺正變換方法研究了電場對量子阱弱耦合束縛極化子的性質的影響.推導出量子阱中束縛極化子的基態能量和庫侖束縛勢、電場和阱寬的變化關系.數值計算結果表明，基態能量因電場和庫侖束縛勢的不同而不同，隨電場和庫侖束縛勢的增大而增大，隨阱寬的增大而迅速減小
  10. In this paper, based on the previous works, we study the quality of a hydrogenic impurity in gaas / gai - xalxas rectangular quantum wires in detail. using variational approach, we calculate the binding energy and the photoionization cross - section of the impurity in the system

    本文在前人工作的基礎上，詳細研究了矩形截面gaas ga _ （ 1 - x ） al _ xas （ x = 0 . 3 ）量子阱線中的類氫雜質體系的性質，採用變分技術計算了此體系的束縛能及其光致電離截面。
  11. In the first part, following ref [ 27 ], the expression of the envelop function is obtained. then, considering the dismatch of effective mass between the well and the barrier, using the variational approach, we calculate the binding energy of hydrogenic impurity

    在第一部分，我們按照文獻[ 27 ]中的方法，得到了包絡函數的表達式，並利用變分法計算了類氫雜質的束縛能，其中考慮了阱壘中電子有效質量的失配性。
  12. There were troubles in the continuity of the function and of its - derivative divided by band - mass on the boundary. in the theoretical calculation, the wave function is relative to the physical properties of the impurity greatly, the envelop function f ( x, y ) is expanded in terms of the one - dimensional linear harmonic oscillator function in this paper. it satisfies the continuity of the function and of its - derivative divided by the band - mass, so it improves the precision of the function and binding energy

    與以往工作不同的是，以前選用的x ， y方向電子的包絡函數f （ x ， y ）是一維有限深量子阱中波函數的乘積，在邊界上波函數的連續性和粒子流的守恆條件存在問題；而在理論計算中，波函數的選取與雜質的物理性質有密切關系，本文選取的電子的包絡函數是用一維線性諧振子的波函數展開而成的，在邊界上能夠同時滿足波函數的連續性及粒子流（ 1 / m ~ * ） f ' （ x ， y ）的守恆條件，從而使得波函數和束縛能的精確度得到了改進。
  13. The patent covers the use of a computer - designed diffraction grating, a type of hologram that takes a single beam and breaks it up into an array of beams, each one of which forms an optical trap for particles of micron or nanometer dimensions

    此專利涵蓋了電腦設計的繞射光柵，以及可將單一光束分散成陣列光束的雷射全像術，其中每道光束都會形成光阱，可捕捉微米或奈米大小的粒子。
  14. On choosing the variational wave function, we have considered the correlation between the confined and non - confined directions of the wires in order to make our results more exact. the whole paper is divided into two parts mainly

    在選取變分波函數時考慮到了電子運動在量子線的限制方向與非限制方向的相關性，從而使得在寬阱時波函數和束縛能的精確度得到改進，全文主要由兩部分組成。
  15. By the complicated mathematical calculating, we obtain the energy equation of charged excitons, from which we can determine the variational parameters a and, thus the complex energy of charged excitons can be calculated, and the binding energy and correlation energy of charged excitons can be obtained versus the quantum well width

    通過復雜的數學推導得到帶電激子體系能量的數學表達式，對變分參數和變分可確定出變分參數和，從而得到體系能，進而計算出體系的束縛能和相關能隨阱寬的變化。
  16. In the effective mass approximation, using the two - dimensional equivalent potential model and a simple two - parameter wave function, we calculate variationally the ground state binding energy and correlation energy of positively and negatively charged excitons in finite deep gaas - al0. 33ga0. 67as quantum wells. the results show fair agreement with the previous experimental results

    在有效質量近似下，我們採用二維等效勢模型，並且選取了數學形式簡單、物理意義明確的兩參數變分波函數，利用變分法數值計算了有限深gaas ? al _ （ 0 . 33 ） ga _ （ 0 . 67 ） as量子阱中帶電激子的基態束縛能及相關能，所得結果與實驗結果符合得很好。
  17. The changing relations between the ground - state energy of the bound polaron in the quantum well and the coulomb bound potential, the electric field strength, and the well width are derived

    推導出量子阱中束縛極化子的基態能量和庫侖束縛勢、電場和阱寬的變化關系。
  18. Firstly, we calculate variationally the binding energy and correlation energy of excitons in finite deep gaas - al0. 33ga0. 67as quantum wells. in the calculation, we consider the effect of effective mass and dielectric constant mismatch in the two materials. the results we obtained are basically conformed to the ones obtained from the previous theory and experiment

    首先，我們計算了有限深gaas - al _ （ 0 . 33 ） ga _ （ 0 . 67 ） as量子阱中激子的束縛能，其中考慮到了阱和壘兩種材料中電子和空穴的有效質量以及介電常數的失配影響，我們計算得到的激子的束縛能及相關能與前人的理論結果和實驗結果基本上相符合。
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