電子自旋密度 的英文怎麼說

中文拼音 [diànzizìxuánmìdù]
電子自旋密度 英文
electron spin density
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 自 : Ⅰ代詞（自己） self; oneself; one s own Ⅱ副詞（自然;當然） certainly; of course; naturally; willin...
  • 旋 : 旋Ⅰ動詞1 （旋轉） whirl 2 （用車床切削或用刀子轉著圈地削） turn sth on a lathe; lathe; pare Ⅱ名詞...
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電子 : [物理學] [電學] electron
  1. The drives rely on a spintronic effect, giant magnetoresistance ( gmr ), to read such dense data

    這種硬碟是利用一種巨磁阻的自旋電子效應來讀取這些高密度的資料。
  2. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  3. Using above method with theories, we have computed the magnetic exchange coupling constants j values about ( vivo ) cr [ 1 ( cn ) 6 ] 2 / 3. 10 / 3h2o compound and [ mo2 ( cn ) 11 ] 5 compound, respectively. the j values are equal to - 42. 36cm - 1 and - 111. 46cm - 1, respectively

    然後，分別對這兩種配合物自旋密度分佈加以分析，兩種配合物中金屬離子上的成單電子幾乎是定域的，其自旋極化佔主導作用。
  4. As the representation of the electron spin angular momentum is two - dimensional or three - dimensional, the electron energy is calculated simplier by the theory of density matrix and average value

    當電子在磁場中的自旋角動量的表示為二維和三維時，應用密度矩陣原理求解其能量更為簡便。
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