電阻性器件 的英文怎麼說
中文拼音 [diànzǔxìngqìjiàn]
電阻性器件
英文
resistance unit- 電 : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
- 阻 : 動詞(阻擋; 阻礙) block; hinder; impede; obstruct
- 性 : Ⅰ名詞1 (性格) nature; character; disposition 2 (性能; 性質) property; quality 3 (性別) sex ...
- 器 : 名詞1. (器具) implement; utensil; ware 2. (器官) organ 3. (度量; 才能) capacity; talent 4. (姓氏) a surname
- 件 : Ⅰ量詞(用於個體事物) piece; article; item Ⅱ名詞1. (指可以一一計算的事物) 2. (文件) letter; correspondence; paper; document
- 電阻 : (物質阻礙電流通過的性質) resistance; electric resistance (電路中兩點間在一定壓力下決定電流強度...
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In this paper, the design of a practical sort of high performance biquadrates elliptic active band - pass filters is emphasized, and then the design techniques and how to calculate the resistors and capacitances, how to make computer simulation and tolerance analysis with computer are described in detail
摘要本文我們重點介紹了一種實用的雙二次型高性能橢圓函數有源帶通濾波器的設計方法,詳細介紹了該濾波器的設計步驟及阻容元件的參數計算,並對設計出的電路用計算機進行模擬模擬和容差分析。We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions
通過理論和試驗探討,選用鎳鉻合金電阻絲作為加熱元件,配以陶瓷質埋入式爐膛;選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器;選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶( k )作為測溫元件;熱電偶對稱安置在樣品支持器容器的中部;選用硅酸鋁耐火纖維作保溫材料;合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體;採用升溫曲線來控制爐膛供熱過程;採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法,進行圖形處理。In the dissertation, the effects of the air slide - film damping on the capacitive accelerometers having different slot structures which are completely or partly etched, and fabricated by the anodic bonding between silicon and glass and bulk silicon micromachining process are researched by changing the distance between the moving structure and substrate, the thickness of the structure, the width of the completely etched slot structure, the depth of the partly etched slot structure according to the two well known air slide - film damping models
對于橫向運動的體微機械器件,其周圍空氣表現為滑膜阻尼。本文基於滑膜阻尼的兩個模型,通過改變振子與襯底的間距、振子的厚度、刻透的柵槽的寬度、沒有刻透的柵槽的深度等參數,研究了這些參數對硅?玻璃鍵合工藝製作的體硅微機械電容式傳感器阻尼特性的影響。" electronic 1c chip drawing system " provides many functions such as " modify the position of the component ' s diagram " " modify the color of the component ' s diagram " " magnify and minify the component ' s diagram without distortion " " change the type of drawing line " " edit some physical properties of the component " " copy and paste diagram of one component " " delete one or more component diagrams " " move more than one components " positions " " change the z _ order of the diagram, set it to back or bring it to front " " save the drawing of the electronic components to one file and the file extension name is *. brd " " print the drawing ". users can finish all these functions easily by clicking and dragging the mouse
電路板元器件繪制系統主要完成了使用鼠標拖拽、鼠標點按的方式繪制電路板上各種常見的元器件圖形;編輯電路板上元器件圖形的位置;編輯元器件圖形的顏色;不失真的對器件圖形進行放大和縮小;編輯元器件圖形的線型;編輯電路板上各個器件的物理屬性(比如電阻的阻值大小、電容的容量大小、額定電壓等) ;復制已經繪制出的電路板上的器件;粘貼剪貼板上的器件;刪除單個或多個已經繪制出的器件圖形;同時改變多個器件圖形的位置;改變繪制區內各個元器件的zorder順序,也就是可以將層疊在一起的圖形置前或置后;把繪制的電路板器件圖保存到指定文件中;能打開、查看和修改保存的電路板器件圖;列印電路板器件圖。A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed
提出了一個價帶附近的界面態分佈模型,用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線;分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響;論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性,分別模擬了室溫下和300時sicpmos器件的輸出特性,分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。The reason to cause this phenomenon is due to the change of electric field in the blue oled to induce the probality of the carrier shifted and the hole - electron recombination zone changed, which was a possible alternative to achieve color display. 3 ) device with the structure of ito / npb / adn : balq3 / alq3 / mg : ag was fabricated. when the balq3 dopant concentration was about 25 mol %, a high performance devcie with luminous efficiency of 1. 0 lm / w, the peak of emission spectrum at 440 nm, the cie coordinate at ( 0. 18, 0. 15 ), and half lifetime of unencapsulated device about 950 hrs was achieved
導致本現象的原因是由於各有機層電場強度的變化影響了空穴和電子的隧穿幾率,從而導致載流子的復合區域發生改變而發出不同顏色的光; 3 )制備了結構為ito / npb / adn : balq3 / alq3 / mg : ag的藍光oled ,空穴阻擋材料balq3的摻入顯著影響了oled的光電性能,當balq3的摻雜濃度為25mol %時, oled的發光效率為1 . 0lm / w ,發光光譜的峰值為440nm ,色純度為( 0 . 18 , 0 . 15 ) ,未封裝器件的半衰期達到了950小時; 4 )在藍光材料adn中摻雜npb 、 balq3和tbp三種材料時,不僅改善了器件的發光亮度和色純度,而且提高了器件的發光效率和壽命。1 m 0. 5, the phase - shifted angle 6 is controlled in term of sine law which makes the magnitude of resonant voltage track a reference sine voltage, and the resonant voltage is rectified, filtered, inverted and then the better sine - voltage output is obtained, theoretical analysis and experimental results show that for the resistive load and inductive load, the switches of leading leg of the phase - shift - controlled circuit are always turned on at zvs, and ones of lagging leg are turned on at zvs ( < 0 ) or turned off at zcs ( ( > 0 ), moreover, all switches in the low - frequency inverter are always turned on and off at zvs, the measured circuit efficiency for rated load reaches up to 88 %
從功率單向流動角度出發,提出了一種lcc諧振型恆頻移相單相高頻鏈逆變電路拓撲,在調制系數0 . 1 m 0 . 5情況下,控制移相角按正弦規律變化,使諧振電壓脈沖列的幅值追蹤參考正弦電壓信號,經過整流、濾波、低頻逆變,從而獲得正弦度較好的輸出電壓。理論分析和實驗結果證明對于阻性負載或阻感性負載,移相全橋具有超前橋臂零電壓開通,滯后橋臂或者零電壓開通( _ 0 )或者零電流關斷( _ 0 )的軟開關特性,而低頻逆變器的各個開關均實現零電壓條件下的開通與關斷。The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future
首先介紹了器件建模的基本原理及相關模擬技術,然後利用工藝模擬軟體生成器件基本結構,並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法,隨后在模擬實驗的基礎上著重分析了dddmos的物理特性,在求解泊松方程、連續性方程等基本方程的基礎上,建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos ( level = 3 )模型而得到完整的dddmos模型,此模型與模擬數據符合得比較好,通過對不同工藝參數的器件進行模擬比較,該模型能夠覆蓋不同的工作偏壓范圍,具有較明確的物理意義,對今後的功率集成電路的研發有一定的參考意義。The safety of transmission line plays a important role in power system safety it is not only the requirement of ensure supply power reliability, but also the necessary precondition of enhance power system stabilization, to remove faulty line quickly and accurately, also keep non - faulty line continuous work when some transmission line faults current differential protection is a kind of simple, reliable and good - selective protection manner to any variety of transmission lines, power system development needs current differential protection apply to transmission lines, moreover the advancement of electric and communication technology enable current differential protection apply to transmission lines firstly, the paper discusses, analyses the research and application transmission line protection in detail, compare the principle and realistic presupposition of general line pilot protections secondly, because conventional current vector differential protection are influenced easily by load current and transitional resistance, in order to at the same time quicken protection act, the principle and criterion include work characteristic of differential protect based on fault component sampled values are studied, results shows that differential protect based on fault component sampled values excels general vector current differential protection in reliability, sensitivity and anti - saturation of current transformer in addition, synchronous current sampling methods at all terminals of line is analyzed and estimated lastly, the principle and criterion. also device design about current sampling values differential protection based on optical fiber communication, which apply to short transmission lines are concretely investigated,
基於基爾霍夫定律的電流差動保護無論對於何種形式的輸電線路都是一種簡單、可靠、選擇性強的保護形式,電力系統的發展使得電流差動保護應用於線路保護成為需要,而電子、通信技術的發展使得電流差動保護應用於輸電線路成為可能。首先,本文對目前線路保護的研究和實際應用情況進行了討論和分析,比較了常用線路縱聯保護的實現原理和實現條件及優缺點。其次,針對常規相量電流差動保護易受正常負荷電流和故障過渡電阻影響的缺點,同時為加快差動保護的動作速度,對基於故障分量瞬時采樣值電流差動保護的原理、判據、動作特性等作了討論和分析,結果表明基於故障分量瞬時采樣值電流差動保護在可靠性、靈敏度、抗電流互感器飽和方面明顯優于常規相量電流差動保護,對電流差動保護各端的同步采樣方法和數據通信也進行了分析和評價。And the results of calculation and numerical simulation indicate, without increasing the intrinsic collector - junction area of power devices, collector - combed structure helps to raise the intrinsic heat - dissipating area and base ' s perimeter, improve heat - dissipating method of each cell of the chip, enhance the distribution uniformity of junction temperature and current of each cell of the chip, reduce the thermal resistance and raise the dissipation power pd and output power p0, fairly well relax the contradiction among frequency, out - put power and dissipation power of the devices, and further improve the devices " property against second breakdown
而計算分析和二維數值模擬分析結果表明:梳狀集電結(基區)結構在不增加器件本徵集電結面積的條件下,增大了器件的本徵散熱面積和基區周長,改進了每個子器件單元內的散熱方式,提高了單元內結溫和電流分佈的均勻性,降低了器件的熱阻,增大了器件的耗散功率和輸出功率,較好地緩解了目前傳統結構中頻率與功率、功耗的矛盾,並有利於改善器件抗二次擊穿的性能。It has certain fight impact, endure electric arc and good endure leakage of electricity, it is mainly apply to make insulation structural of low voltage of electrical equipment as well as daily use utensil accessory etc. product appearance submits granular
通過阻燃性能認證。具有一定的抗沖擊性耐電弧性和良好的耐漏電性,適用於製造低壓電器絕緣結構件以及日用器皿配件等。產品形狀呈粒狀。Harmonized system of quality assessment for electronic components - sectional specification : fixed power resistors - capability approval
電子元器件質量評定協調體系.固定電源電阻器分規范.性能認可Of the currently available coolers for electronic products with a high heat flux, microchannel heat sinks have been proved to be able to provide the best heat transfer performance and are one of the most promising coolers. the manifold microchannel ( mmc ) heat sink has many advantages such as low thermal resistance, compact structure, little amount of coolant, low flow rate, uniform temperature distribution along the flow direction and many others, so it is able to provide the best heat transfer performance : lowering the maxmal temperature and the temperature difference
在目前高熱通量電子產品冷卻器中,微通道熱沉已被證實是傳熱性能最佳且最具應用潛力的冷卻方式之一,而歧管式微通道熱沉因具有低熱阻、結構緊湊、所需冷卻液量小、沿流動方向溫度分佈均勻等優點則成為減小電子元器件換熱表面最高溫度、降低溫度變化的一種有效方法。This paper mainly described the research on rheological property, high thermal stability, flame retardant, the influence of catalyst and insulating heat conduction of organic silicon encapsulating materials, which greatly apply on electronic equipment and large scale integrated circuit and so forth
摘要本文主要綜述了國內外用於電子元器件、大規模集成電路等高科技領域的有機硅灌封材料在流動、耐高溫、阻燃和絕緣導熱等方面的性能以及催化劑對灌封材料的影響的研究應用進展。By means of the theoretical analysis of the micromachined vibratory rate gyroscope, we get following conclusions : the microgyroscope can be driven by tangent electrostatic force produced by fence structure electrodes, and the normal electrostatic force can be neglected for the influence of the device property ; the parasitical capacitance and fringing effect can ’ t be neglected for the calculating of the detection capacitance ; the coefficient of damping force is comparatively little when the air damping in the driving mode and the sensing mode of the device is the couette flow damping
主要內容如下: 1 .分析了微機械陀螺的運動特性、靜電驅動特性和在大氣下的阻尼特性,分析結果表明,可以運用切向靜電力驅動質量塊振動,法向靜電力對器件特性的影響可以忽略;在計算微結構電容時,電容的邊緣效應和寄生電容不可忽略;在器件所受阻尼主要為庫埃特流阻尼的情況下,阻尼力系數較小。The source drain extension ( sde ) structure and its reliability are thoroughly studied. first, it is shown that the sde structure can suppress short channel effect effectively and the parasitic resistance at the sde region has an effect on performance. it is proposed that increasing the dose condition in the sde region can reduce the parasitic resistance and should be adopted to achieve high performance for deep submicron devices
本文對深亞微米源漏擴展mos器件結構及其可靠性進行了深入研究,首先通過模擬驗證了源漏擴展( sde )結構對短溝道效應的抑制, sde區寄生電阻對器件性能的影響以及sde區摻雜濃度的提高對器件性能的改善,指出了器件尺寸進一步減小后,提高源漏擴展區摻雜濃度的必要性。A resistive, bulk effect type of photosensor ; used when it is desirable to wire several photoreceivers in series or in parallel
在多個光電接收器串聯或並聯連接時使用的一種電阻性體效應型光敏元件。And the general procedures of these methods are summarized. finally, some practical problems are analyzed using fdtd, which include passive linear resistor element and nonlinear diode element in the microwave circuits and an integrated antenna embedded with an active gunn diode element and a dielectric cavity resonator
最後,本文通過編程模擬了微波電路中的無源線性器件電阻和非線性器件二極體,含有有源器件gunn二極體的有源集成微帶天線以及介質腔諧振器等具體實例,來驗證各種方法的可行性和有效性,計算結果與實驗結果吻合。Test methods for properties of structure ceramic used in electronic components - test method for volume resistivity
電子元器件結構陶瓷材料性能測試方法體積電阻率測試方法The second, the realization of the zvs has no concerned with the attribute of load. with the load of light or full, even the resistance or inductor load, the chopper can ensure that the main - switches will realize the zvs switching
其次,實現零電壓軟開關的條件與負載的性質和程度沒有關系,無論是電阻性負載還是大電感負載,無論是輕載還是滿載,都可以實現功率器件的零電壓開通和關斷。分享友人