電子通量密度 的英文怎麼說

中文拼音 [diànzitōngliángmìdù]
電子通量密度 英文
electron flux density
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 子 : 子Ⅰ名詞1 （兒子） son 2 （人的通稱） person 3 （古代特指有學問的男人） ancient title of respect f...
  • 通 : 通量詞（用於動作）
  • 量 : 量動1. （度量） measure 2. （估量） estimate; size up
  • 密 : Ⅰ名詞1 （秘密） secret 2 [紡織] （密度） density 3 （姓氏） a surname Ⅱ形容詞1 （距離近; 空隙小）...
  • 度 : 度動詞[書面語] （推測; 估計） surmise; estimate
  • 電子 : [物理學] [電學] electron
  • 通量 : [物理學] flux; shower
  1. The experimental results show : the flattop phenomenon on the diode voltage pulse was very apparent for using the carbon fiber cathode, that is to say, the pulse duration of the diode voltage was widened ; moreover, under the condition of the same power of microwave, the pulse duration of the out - put microwave was prolonged by about 30 % ; the peak power of the microwave was enhanced by 3db

    通過在裝置上做的兩種陰極的對比實驗，結果顯示:碳纖維陰極的使用，改善了電子束質量，使輻射微波的脈寬增加了30 %以上，輻射主瓣方向上的功率密度提高了3db以上，頻譜分佈較純凈，實現了微波的高效輸出。
  2. The high - power semiconductor quantum well ( qw ) laser is a kind of luminescence device with superior performance, it has longe - lived, low threshold current density, high efficiency, high luminosity and excellent monochromatic, coherence, directionality, etc. the high - power semiconductor laser is widely applied to the fields, such as military, industrial machining, communication, information processing, medical treatment, etc. the material ' s epitaxy is the foundation of the whole laser ' s fabricating, and it has important influence on the optics and electricity performance about the laser

    大功率半導體量子阱激光器是一種性能優越的發光器件，具有壽命長、閾值電流密度低、效率高、亮度高以及良好的單色性、相干性、方向性等特點，廣泛應用於軍事、工業加工、通信及信息處理、醫療保健等領域。材料的外延生長是整個激光器器件製作的基礎，對器件的光學和電學性能有著重要的影響，生長不出優質的材料體系，獲得高性能的器件就無從談起，因此，材料的外延生長便成為了整個半導體激光器製作過程之中的重中之重。
  3. A method is proposed to construct a localized active functional space from the density matrix of a large system. the large system is partitioned into central and surrounding areas. the active functional space is mainly localized on the central area. it contains all basis functions centered at the central area and all the orbitals which consist of the basis functions localized in the surrounding area and interact with the basis functions in the central area to a certain extent. an integral number of electrons are involved in the localized active functional space which can be considered as a relatively independent subsystem in the large system and for which formally isolated quantum chemical calculations can be performed. the related program has been coded and is checked through calculating the number of 4

    報道了從大體系的密度矩陣出發構造定域于指定局部的活性泛函空間的方法和程序。將大體系劃分為中心區和環境區，活性泛函空間包含中心區的基函數及與其有相互作用的環境區軌道，容納整數個電子，構成大體系的一個相對獨立的子體系，可以在其中進行獨立的量子化學計算。通過計算鑭系氯化物和水合離子的4
  4. According the key factors we find, we bring forward a new conception : multilevel suppressor and design a new high performance suppressor whose ion - exchange membrane has bigger areas and using three electrodes including one cathode ( anode ) and two anodes ( cathode ), at the same time we fill the suppression compartment with one kind of ion exchange resin which has moderate exchange capacity. according to our experiment ' s results, we find the new type suppressor has quite high working current efficiency and suppressing capacity. in most cases, the suppressor ' s current efficiency is over 90 % ; the suppressor can transform the naoh ( concentration : 200mmol / l, flow rate : i. oml / min, conductance : over 10000 i - i s cm " ) to pure water ( conductance : 8. 9 it s cm in chapter 3, the high performance suppressor is applied in determination some trace - amounts ions in plating solution, sewage. in this chapter, we also have a research on the gradient ion chromatography

    第二章首先以xyz - 1型電化學抑制柱為例，分析了電化學抑制柱的抑制過程得出影響抑制容量的主要因素主要是抑制柱的電流效率和離子交換膜的極限電流密度，因此採用中等交換能力的離子交換樹脂作為抑制室的填料以提高電流效率，在通常情況下電流效率可達到90以上；在選用同種離子交換膜的前提下，可通過增加離子交換膜的有效面積達到提高極限電流的目的從而提高抑制柱的抑制容量，因此提出了多級抑制的概念並據此研製了共電極式高容量電化學抑制柱，該抑制柱最高可將流速為1 . 0ml / min ，濃度為200mmol / l電導率超過10000 s ? cm ~ （ - 1 ）氫氧化鈉溶液抑制為電導率低至8 . 9 s ? cm ~ （ - 1 ）的純水，並且具有穩定性高、分析結果準確等優點。
  5. Furthermore, the growth and the study of self - organized quantum dots structures become more and more important recently, and the application of self - organization technique become wider and wider in this thesis, we address the theory of film growth and the growth technique firstly more, the ways and characteristics of surface detection are prescribed we mainly report the growth process, results and discuss of self - organized quantum dots structures in the a12o3 substrates by s - k mode using ecr - mocvd, in the espd - u device the growth art of ain epilayer which is the preliminary foundation of self - organized gan / ain quantum dots structures, including the substrate cleaning, nitridation, the growth of buffer and the growth of gan and ain epilayer, is discussed we deliberately compare the test result of rheed xrd and afm and achieved the optimalized condition of ain at last we have successfully realized the growth of ain which is much smooth and better crystal quality moreover, we grow the self - organized gan / ain quantum dots structure in s - k mode because the limits of the heater temperature, we can not grow the atom - smooth epilayer of ain until now so we could not grow better quantum dots which have small diameter and big density but the self - organized quantum dots structures with better quality will be realized successfully if the substrate temperature is increased the thesis study belong to my tutor subject of national nature science foundation ( 69976008 )

    本論文主要論述了在espd - u裝置上，採用電子迴旋共振等離子體增強mocvd （ ecr - pamocvd ）方法，在藍寶石襯底上通過s - k模式自組裝生長gan aln量子點結構的生長工藝、結果及討論。而重點分析了自組裝生長量子點之前的aln外延層生長工藝，包括襯底清洗、氮化、緩沖層的生長和gan 、 aln外延層的生長；通過高能電子衍射、 x射線衍射和原子力顯微鏡測試，並且對這些測試結果進行了詳細的比較研究，得出了較優化的工藝條件，生長出了晶質較好、表面較平整的aln外延層；進而採用s - k模式自組裝生長了gan aln量子點結構。由於實驗裝置加熱爐溫度的限制，我們沒有能夠生長出原子級平滑的aln外延層表面，因而沒能夠生長出密度比較大和直徑比較小的量子點。
  6. In this thesis, we have mainly studied the characteristics of chf3, c6h6 and cf4 electron cyclotron resonance ( ecr ) plasma using langmuir probe and optical emission spectroscopy ( oes ). the relative concentration of different radicals in chf3 plasma and the effect of chf3 / c6h6 ratio on bond configuration of a - c : f films were discussed. it was showed that h, f, c2 were the main radicals among radicals of h, f, c2, ch and f2 in chf3 ecr plasma

    重點研究了chf _ 3 、 cf _ 4和chf _ 3 c _ 6h _ 6放電等離子體中基團的分佈；分析了不同基團的相對密度隨宏觀放電條件（微波輸入功率、放電氣壓、源氣體流量比）的變化規律；探討了等離子體中各種基團的生成途徑；在不同源氣體流量比的條件下沉積了a - c ： f薄膜並通過傅立葉變化紅外吸收光譜（ ftir ）的測量得到了薄膜中鍵結構的信息；分析了a - c ： f薄膜的沉積速率及其鍵結構與等離子體空間基團分佈狀態之間的關聯。
  7. According to the basic theory of iir filters, a scheme of hardware implementation is worked out combining with the fact that coefficients of numerator and denominator of transfer function are fixed and the structural feature of selected hdpld. from the clew of implementing a stratified ， modularized and parameterized design ， the thesis describes the hardware implementation of the iir filter with vhdl and schematic diagram design method. two examples that are iir notch filter and iir low - pass filter are given ， the stability of filters and the effects of quantification of coefficient are also analyzed

    以iir數字濾波器的基本理論為依據，結合濾波器的傳遞函數分子、分母系數固定這一事實和選用的高密度可編程邏輯器件的特點，確定了iir數字濾波器的硬體實現方案；按照層次化、模塊化、參數化的設計思路，採用vhdl硬體描述語言和原理圖兩種設計技術進行了iir濾波器的硬體設計；本文給出了iir陷波濾波器和低通濾波器兩個設計實例，對設計的濾波器都進行了穩定性分析和系數量化影響分析；最終將完成的iir濾波器的硬體設計配置到晶元中，並在製作的實驗電路中進行了實際濾波效果測試。
  8. With the development of microelectronic products ( integrated circuit, printed circuit board, etc ) directing to high density, thin separation and low defect ratio, its inspection requirement is higher on aspects of precision, efficiency, universal, and intelligence etc. therefore, this paper researched on the general key techniques in the field of microelectronic products vision inspection, covered the shortage of traditional inspection on aspects of fast and precision locating, image mosaic, and fine defect test, completed theory study on physical dimension and defect inspection of microelectronic products based on machine vision, developed the prototype and used lots of experiments to prove its correctness and feasibility

    隨著微電子產品（集成電路晶元、印刷電路板等）向著高密度、細間距和低缺陷方向發展，對其檢測技術在精密、高效、通用和智能化等方面提出了更高要求。由此，本文對微電子產品視覺檢測中的關鍵技術進行研究，彌補了傳統檢測在精確快速定位、圖像全景組合和精細缺陷檢測等方面的不足，最終完成基於機器視覺的微電子產品外形尺寸和缺陷檢測的理論研究和樣機研製，並進行了大量實驗證明其正確性和可行性，力圖為我國自主創新的微電子產品視覺檢測技術提供理論和實際借鑒。
  9. Abstract : this paper describes the thermal effects of a coaxial rf - excitedco2 laser ， based on the balance equations of electron density and energy ， current continuity equation ， and heat conduction equation. depende ncies of the spatial distributions of gas temperature on some discharge parameters arediscussed

    文摘:通過求解放電等離子體中的帶電粒子密度和能量的平衡方程、電流連續性方程以及熱傳導方程，研究了同軸射頻（ rf ）激勵co2激光器中放電混合氣體的溫度效應，分析了有關放電參數對溫度分佈的影響。
  10. The vertical structure optimization through simulation of the new structure, low loss igbt ( lpl - igbt ) has been discussed in detail in this paper. in comparison with the prevalent igbt, lpl - igbt has not only the merit of transparent back emitter and high lifetime of carriers owned by npt - igbt but also the complex n7n + voltage sustain layer structure owned by pt - igbt. not only possesses lpl - igbt lower power loss but also the other capacities are no better than npt - igbt such as break down voltage, current capacities, safe operation area and cost

    與現有igbt相比較， lpl - igbt在結構上保留了npt - igbt中的透明發射區和高載流子壽命的本質優點，同時又具有pt - igbt中n ~ - n ~ +復合薄耐壓層的優點；在器件性能上， lpl - igbt不僅具有比npt - igbt更低的能量損耗（包括通態損耗和開關損耗） ，而且其餘性能如器件耐壓、電流密度、安全工作區以及製造成本等相對現有npt - igbt均有明顯改善。
  11. Then through the optimization of the code, we can get the dependence of free electron ' s lifetime and the number of recombination events on the density and depth of traps

    通過對所得數據的分析，我們得到了光電子壽命以及復合事件的數量和速率對勢阱密度和深度的依賴關系。
  12. According to basic theories for distributing regular of electric field about surface single spot current source and high density resistivity prospecting method in this paper. put forward an installation which use one current electrode or dipole current electrodes and the others prospecting at the same time to realize high density resistivity method by office date processing, such as wenner pole - dipole a, wenner pole - dipole b, wenner alpha, wenner beta, wenner gamma and pole - pole array

    摘要運用地面點電流源電場的分佈規律和高密度電阻率法的基本思想，提出了分別利用單極供電、偶極子供電，其餘電極同時測量，通過室內數據整理實現高密度電阻率法的溫納對稱四機、溫納偶極、溫納微分、溫納三極a 、溫極三極b和二極等裝置。
  13. For our laboratory is changing toward industrialization, a lot of work on conventional ingaas / gaas / algaas quantum well laser has been done. how the parameters, such as threshold current density, slope efficiency, fwhm and spectrum width, are influenced and how much the influence is, are discussed by the numbers. the effective means how to improve a certain performance parameter are purposed too

    由於本實驗室正處于由試驗研究向產業化邁進的階段，針對常規ingaas / gaas / algaas量子阱激光器做了很多工作，文中系統論述了常規量子阱激光器的各項性能參數?閾值電流密度、斜率效率、遠場發散角、光譜線寬等的影響因素及改進的有效辦法，並針對激光器p ? i線性度不好、遠場發散角出現多瓣的現象，通過理論分析找出原因所在並進行了改進，有效解決了以上問題。
  14. Series of aligned metal nano - arrays with controlled diameters, length, volume fractions and density are obtained by electrodepositing the metal in the corresponding aao membranes which have the same structure parameters, or adopting different depositing conditions, such as voltage, time and ph. 3. ordered co nano - arrays have been prepared via electrodeposition of the metal within the nanoporous aao template

    金屬aao納米有序陣列復合結構的金屬組分含量、納米粒子的長徑比、納米粒子的間距和分佈密度等重要結構參數，都可以通過選用不同的aao模板和改變電化學液相沉積工藝參數（如電壓、頻率、時間、濃度及ph值等）加以調控； 3
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