電晶體化的 的英文怎麼說

中文拼音 [diànjīngtǐhuàde]
電晶體化的 英文
transistorized
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 晶 : Ⅰ形容詞（光亮） brilliant; glittering Ⅱ名詞1. （水晶） quartz; （rock） crystal 2. （晶體） any crystalline substance
  • 體 : 體構詞成分。
  • 的 : 4次方是 The fourth power of 2 is direction
  • 電晶體 : bjt
  1. Secondly the major mechanisms of degeneration of pcss are caused by both the filamentary nature of the current in high - gain pcss damage to the chip of the switch and the charge domain reached the anticathode causes the erosion of metal interface

    開關退化的主要原因是:開關體內的絲狀電流對開關晶元的損傷;以及電荷疇到達陽極時來不及放電而產生的電荷擁擠現象對開關電極接觸表面的損壞。
  2. In order to find out the mechanism of bone growth and biodegradation of this kind materials animal experiment was adopted in this paper, by use of sem, epma and polarizing microscope it discussed the transformation of porous bioceramic after implanted in rabbit ' s femur. in this experiment we got some important findingsfirstly, after implanted the material began to degrade indeed

    利用掃描電鏡、電子探針、 x光片以及甲苯胺藍和he染色等組織學觀測手段，本文探討了- tcp多孔生物陶瓷在植入骨內后結構形態與組成的變化，深入分析了- tcp多孔生物陶瓷的降解機理和晶體轉變過程。
  3. Cadmium sulphide or cadmium selenide in polymer based thin film transistor

    聚化合物薄膜電晶體內的硫化鎘或硒化鎘。
  4. During this precess, using the technology of optimizing the widths of both common source mosfet and common gate mosfet under a fixed power, we obtained a compromised result of power consumption and noise figure

    設計過程中，在限定功耗的前提下，主要針對共源晶體管和共柵晶體管的柵寬，對電路的性能進行了優化，使得設計的lna的噪聲系數最小。
  5. Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized

    文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值
  6. Once the sapphire was covered with nanotubes, they could place the metal electrodes of the transistors wherever they wanted and remove the unwanted nanotubes with highly ionized oxygen gas

    藍寶石上覆蓋奈米管后，就可在任意的位置安裝電晶體的金屬電極，再以高度離子化的氧氣除去不需要的奈米管。
  7. Xing su ( microelectronics and solid state electronics ) directed by prof. lin chenlu the fast development of information technology requires integrated circuit to be greater integrated, faster functioned, and lower power - consumed, that lead to continuous shrinkage of mos and dram feature size. and under this trend the thickness of mos gate dielectrics ( sio2 ) would soon scale down to its physical limit

    日益增長的信息技術對更高集成度、高速、低功耗集成電路的需求，驅使晶體管的尺寸越來越小，隨之而來的問題是作為mos柵氧化物和dram電容介質的sio _ 2迅速減薄，直逼其物理極限。
  8. The obtained qcm sensor has sensitive response to the liquid density and can be expected as a density meter. composite films of p - cyclodextrin ( p - cd ) bound to the titanium dioxide nanoparticles were tightly coated on the surface of qcm

    研究發現在乾燥失水的過程中，滴加到tio2多孔膜表面的-環糊精分子與納米二氧化鈦發生縮水反應，形成網狀物質，牢固地結合在壓電晶體表面。
  9. ( 3 ) we explore photorefractive screening solitons and characters of beam transmission in sbn : 61 : cr crystals. the dependence of beam diameter at the crystal output face on applied field is presented. and influences of the limiting space charge field of the crystals on the experimental results are analyzed

    （ 3 ）初步研究了兩塊不同摻cr濃度的sbn 61 cr晶體中的屏蔽型空間孤子效應，以及不同外加直流電場作用下光束在晶體中的傳輸，給出了晶體出射表面處光斑直徑隨外電場的變化曲線，並分析了晶體中空間電荷場的飽和效應對實驗結果的影響。
  10. Piezoelectric sensing technique has been applied to many fields, including analytical chemistry, life science, environmental monitoring and surface sciences because of it ' s small size, high sensitivity, simplicity, low power consumption and broad sensing spectrum. piezoelectric immunosensors possess high selectivity provided by antibodies or antigens and sensitivity response directly to the mass change of proteins. immobilization technologies of biomolecules are of paramount importance in order to preserve their biological activity

    壓電免疫傳感技術利用壓電晶體與抗原抗體特異性免疫反應結合的特徵，通常在壓電石英晶體表面先固定抗原（抗體） ，響應溶液中抗體（抗原）引起的質量、密度和粘度等性質的變化，它兼具有壓電質量響應的高靈敏性和生物化學反應的高特異性。
  11. This technique improves the speed of the transistors, but engineers have been pushing hard to do even better using something called silicon - on - insulator technology, which involves putting a thin layer of insulating oxide slightly below the surface of the wafer

    這項技術提高了電晶體的速度，不過工程師為了追求更好，採用一種稱為絕緣層覆矽的技術，方法是在晶圓表面下緣加入薄薄一層絕緣氧化物。
  12. This paper aims at the request of distribution automation and the disadvantages of existent ttu products and puts forward a scheme of ttu design : dsp ic tms320lf2407a of ti ltd. is chosen as a controller because of its high performance ; a three - phase power / energy ic developed by sames ltd. is used as a measure module to simplify the hardware circuit and software program ; the embedded modem and rs485 / rs232 mode communication interfaces are designed to make the data transfer more flexible and effective ; the 101 communication protocols of international electric power standard are adopted to improve its compatibility

    本文針對配電自動化的要求及現有ttu產品的不足，提出了一種基於dsp的配電變壓器遠方終端單元的研製方案：微控制器選用ti公司高性能定點dsp晶元tms320lf2407a ；使用sames公司推出的三相電能計量晶元sa9904a作為測量模塊，簡化了硬體電路和軟體編程；採用siliconlaboratories的嵌入式modem 、 rs485 rs232等多種通信方式，使數據傳送變得靈活、高效；為了提高設備兼容性及通用性，通信協議採用國際電力標準101規約。
  13. Ningbo sanow electronic co., ltd is a chinese and foreign joint venture, which is located at a beautiful seashore city - ningbo luotuo mechatrionic products zone zhenhai district, sanow is a specialized car a v equipments manufacuter which composes of research and equipment we research and develop products independently

    中外合資寧波紳樂電子公司成立於2002年7月，是一家專業從事研發製造及銷售車載液晶顯示器，車載dvd ， gps導航裝置，汽車天線，視頻配件等汽車影音產品的科工貿一體化的高新技術企業。
  14. This paper describes a transistorized low consumption and fast recovery photomultiplier bases. the base developed for detector dissipates less power and recovers faster than its resistor - only ( or rc ) counterpart

    摘要介紹了由電晶體化的光電倍增管偏置電路的研究，該電路具有功耗低、穩定可靠、輸出脈沖上升時間快、能量分辨高、脈沖線性好、恢復時間快等優點。
  15. A vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices

    摘要提出一種二氧化矽多晶矽二氧化矽夾心深槽場限制環新結構來提高晶體管的擊穿電壓。
  16. Then the optical path difference can be obtained with psi algorithm and to use the phase value for each pixel to determine a height value for each pixel. a primary advantage of psi is its high precision. with careful control of environmental conditions, measurement precision to the nanometer scale or below is possible with psi

    它的基本測量原理是，通過攝像系統（ ccd ）接受到的干涉圖中空間坐標已知的各個像素點的光強信號，在壓電晶體驅動參考光程有序變化時，採集到多幅干涉圖的光強信號，由移相干涉法，由光強值得到被測光程差值（位相值） 。
  17. By examining the micro mechanism of photorefractive effect, we can find that an external dc electric - field can greatly alter ( improve or worsen ) the photorefractive properties of sbnrcr. so it is important to study electric - field effects in these materials. in this thesis, the characters of beam coupling and transmission in sbn : cr crystals under external dc electric - fields are investigated theoretically and experimentally

    本文依據光折變非線性光學的光波耦合理論和傳輸理論，對sbn cr晶體在外加直流電場作用下的光波耦合特性和傳輸特性進行了理論分析和實驗研究，主要內容包括： （ 1 ）從理論上分析了外加直流電場對光折變二波耦合增益的影響，給出了sbn 60晶體的強度增益系數隨外加電場變化的理論計算曲線。
  18. In photorefractive crystal light illumination changes the refractive index of the crystal due to linear electrooptical effect, which in turn changes the light distribution. as a result of the development of this process, a beam, called the phase conjugation wave, leaves the crystal back along the direction of the incident beam and is its phase conjugate replica

    光折變晶體在光輻照下，通過晶體中的線性電光效應而產生折射率隨光強的空間分佈而變化，即在晶體內建立起體相位柵。
  19. The experimental instruments, apparatus and the means to prepare all the samples are introduced in the first section. in section 2, the experimental system including the oxidization system and diffusion system, are introduced therein. in section 3, the samples preparation including the pre - deposition, redistribution and re - oxidization, the samples of b doping, and the fabrication of ga - diffusion transistor, b - diffusion and the transistor formed by b diffusion following ga diffusion are detailed therein, and the as - prepared samples are analyzed by sims, srp and four point probe

    首先介紹了制備各種樣品所用的實驗儀器、設備與方法；第二節中介紹了實驗系統，包括氧化系統、擴散系統，第三節介紹了樣品的制備，包括ga的預沉積、再分佈、二次氧化樣品，擴硼樣品，以及擴嫁晶體管、擴硼晶體管和擴鐮后再補充擴硼晶體管的制備流程；實驗所得樣品，藉助二次離子質譜（ sims ） 、擴展電阻（ srp ） 、四探針薄層電阻等先進的測試分析方法進行分析。
  20. Vco ’ s theory and parameters especially for the basic mechanism of phase noise are studied. the parasitic effects of rf - ic passive devices such as inductors and varactors and the design guidelines for the on - chip spiral inductors are included too. the accumulation - mode varactor, which has a higher quality factor value than the inversion - mode mos varactor, is studied in detail

    研究電感和變容管這兩種射頻集成無源器件的寄生效應和射頻mos晶體管的熱噪聲模型，提出集成電感的設計原則和優化方法，詳細研究了一種新型的積累型mos可變電容，這種積累型mos變容管比一般的反型mos變容管有更高的品質因數。
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