電流驅動能力 的英文怎麼說

中文拼音 [diànliúdòngnéng]
電流驅動能力 英文
current drive capability
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動1 (液體移動; 流動) flow 2 (移動不定) drift; move; wander 3 (流傳; 傳播) spread 4 (向壞...
  • : 動詞1. (趕) drive (a horse, car, etc. ) 2. (快跑) run quickly 3. (趕走) expel; disperse
  • : 能名詞(姓氏) a surname
  • : Ⅰ名1 (力量; 能力) power; strength; ability; capacity 2 [物理學] (改變物體運動狀態的作用) forc...
  • 電流 : current; galvanic current; electric current; electricity; current flow電流保護裝置 current protec...
  • 驅動 : [機械工程] drive; prime mover
  • 能力 : ability; capacity; capability
  1. That the earth has an iron - rich liquid core, sufficient energy to drive convection and a coriolis force to twist the convecting fluid are primary reasons why the geodynamo has sustained itself for billions of years

    地球擁有富含鐵的液態核心、有足夠的,並具有科氏可使對體扭轉,這些是地球發機之所以自我維持數十億年的主要原因。
  2. Finally, because high - speed power solenoid valve is one of the most important executive parts in the electronic control diesel engine and the performances of diesel engine are strongly related to the solenoid valve, the response performance of the solenoid valve is investigated. the response performance of the solenoid is influenced by many factors, such as driving voltage, electric driving unit etc. in order to have high excitation voltage and in low maintaining voltage, a high - low voltage electric driving unit is designed, and in order to make the solenoid valve close more rapidly, an active free - wheeling circuit and a bootstrapping circuit are designed in the electric driving unit, too. in the high - low electric driving unit, high voltage and low voltage are supplied by the dc - dc device and by the accumulator respectively

    高速強磁閥的響應性除了與閥本身的結構和材料有關外,與壓、路的設計密切相關,本文通過分析,首先開發出一種高低壓路,高壓源是山升壓式dc - dc原理獲取的,低壓由蓄池本身提供,實現高壓強激和低壓維持的功路中採用有源續柴汕機中卜軌知介系統的設訓及其七川j敝略的叭究路進行續,加誣了磁閥的關閉速度;採用自舉吐路,降低了場效應管對壓的要求。
  3. After analysing several kinds of light - weighting structures through ansys, hexagonal speculum structure is confirmed. in the aspect of the controling of speculum, the paper adopts the brushless dc motor which is partial assembled to drive the point speculum and the inductosyn as angle measuring component is selected, the ad2s80a the system is used to get directly angle and angular velocity. double closed - loop speed and position control is designed, as the pid control is the well - developed algorithm, which can achieve stable rotation and precise position control

    在指向反射鏡的擺控制方面,採用低速性好的分裝式直機作為指向反射鏡的機,並採用感應同步器作為角度測量元件,運用軸角轉換器ad2s80a進行角度和速度的輸出,採用技術成熟的pid控制方案,進行速度和位置雙閉環控制,以實現指向反射鏡轉速度的平穩性和位置的精確性。
  4. This paper presents our research in actuating in - vivo micro - robot based on the capsule endoscope platform by the external power. while seeking secure driving method we take several factors into account, such as driving environment, power transmitting and consuming, motion requirement and controllability, and locating technique. we mainly deal with driving the capsule with spatial gradient magnetic field, so we employ combined electro - magnetic coils, including gradient coils and homogenous coils, which have rotational dof around a translatable patient bed, to compose a controllable uniform gradient which act on the permanent - magnet embedded robot, thereby get an appropriate spatial force and torque to fulfill the anticipant locomotion such as move, stop, pitch and yaw

    基於環境、量供給和消耗、作要求及安全性與可控性,定位方案等多方面考慮,尋求安全可靠的腸胃檢查微機器人的外部控制方法,並著重研究直接利用外磁場磁微機器人:在微機器人內部嵌入永磁性體,利用體外的組合磁線圈產生加載控制的磁場,其中外部的磁線圈由多組梯度線圈和勻場線圈組合構成,通過繞病床的旋轉以及病床的平移共同控制微機器人所在位置的磁場強度及梯度,作用於微機器人內嵌磁體以獲得空間意義上的必要和調整轉矩,從而有效地完成作要求。
  5. The rotary gear reducer is driven by a dc motor through a gearbox to pro - vide bi - directional drill bit rotation

    齒輪減速器是由一個直的,通過一個齒輪箱為鉆頭提供雙向轉
  6. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比,採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載子遷移率,更大的跨導,更強的電流驅動能力以及更快的路速度等等。
  7. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件,它將soi材料和sige材料結合在一起,與傳統體硅器件相比,表現出載子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢,特別適用於高性、高速度、低功耗超大規模集成路。
  8. All dms force transducers are connectable, that can be runned by dc voltage

    此款放大器和所有直的dms傳感器連接。
  9. In the 21st century, mass customization production has already become an important mode of contemporary manufacture enterprises with the growing drastic market competition and development of clients " individuation demands with large - scale enterprises as object, clients drive as leading, delivery time as aim, work flow management as means, enhanced enterprises " competitive ability as principle, this paper studies ordered enterprise work flow technology based on ebusiness / erp. it also suggests the prototype system, function frame and correlative model of mass customization enterprises, and constructs outside electronic business flat of mass customization enterprise centered on clients and enterprise information flat cored on operation flow

    本文以大規模定製企業為對象,以客戶為主導、以交貨期為目標、以程管理為手段,以提升企業競爭為原則,對基於ebusiness erp集成思想的定製企業工作技術進行研究,提出了大規模定製企業的功框架、相關模型及原型系統,構建了以客戶為中心的大規模定製企業外部子商務平臺和以業務程為核心的企業信息平臺。
  10. By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability

    然後通過比較和分析密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙壓基準源路結構的優缺點,確定了密度比補償型共源共柵結構作為本設計核心路結構,運用負反饋技術設計了基準輸出緩沖路、輸出壓倍乘路,改善了核心路的帶負載電流驅動能力
  11. The air thermal cnergy water heater creates the new generation hot water cquipments. it makes use of the negative card promise successfully, drieing a hot pump with the elcctrie power. equiping through a hot pump medium of compesing parts evaporate a machine. hot pump, congealed machine and inflate valve, urge the work quality completes evaporationt absorb calories within air continuously compress compress congealed reduce expenses evaporate of the thermody name energy cirenlation proess, transfer the calories in the environment to the water thus in, transfer the in great quantities free calories in the air to the life to use a water in

    空氣節熱水器是創新一代熱水設備,它成功地運用逆卡諾原理,用熱泵,通過熱泵裝置中的構成部件-蒸發器,熱泵,冷凝器和膨脹閥,促使工質不斷完成蒸發(吸收空氣中的熱量)壓縮冷凝節蒸發的熱循環過程,從而環境的熱量轉移到水中,將空氣中大量免費的熱量轉移到生活中水中
  12. Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet

    基於量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性的影響進行了分析,對所得結果從器件內部物理機制上進行了討論,最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深(凹槽深度)的增大,槽柵器件的閾值壓升高,亞閾斜率退化,漏極減弱,器件短溝道效應的抑制更為有效,抗熱載子性的提高較大,且器件的漏極的退化要比改變結深小.因此,改變槽深加大負結深更有利於器件性的提高
  13. This arrangement lets an op - amp capable of driving a few tens of milliamps control an amp or so of current across the pass transistor

    這樣的安排可以讓一個運放有幾十毫安的來控制一個放大器或者控制調整管的
  14. After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide

    其次,根據器件參量對閾值壓和輸出特性的影響,以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構,詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值,對器件進行優化設計。
  15. Therefore, a four - phase charge pump circuit is invented to surmount this problem, but the current loading capability of this circuit is unfavorable and the driving clocks must have four - phase non - overlapped " signals

    針對這個問題,四相位的荷泵路由此產生,但是這個路的負載不太好並且它的時鐘信號必須是四相位且不重疊。
  16. It has better output current accurate than normal 8 - channel - led driver ic with constant current, more output channels and better output current regulate accurate

    它相比以往常用的8通道led恆器,具有更強的多通道、更優的輸出調節精度以及更高的匹配精度。
  17. With its smaller volume, lower price and better anti - jamming, singlechip have been widely applied in modern control system operating scene which have been put in collecting data in order to achieve shop floor control. the pic singlechip which is made by microchip co. in the u. s. a, with its risc architecture, high price verse performance ration, high speed, has been working in low voltage, lower power depletion, higer driving power, lower price otp technology and smaller volume, has been represents a new trend in the microprocessors ; as a transmission media, sms ( short message service ) which is a basic service in the gsm network, with its lower price and high reliability, has become important media in people ’ s daily life and trade communication ; led ’ s panel which has been applied in publishing the news and advertising in the enterprise is a control technic, a photoelectricity technic, communications technic, digital - image processing technic all rolled into one

    單片機以其體積小、價格低、抗干擾性好等特點,在現代控制系統中常用在操作現場進行數據採集,以及實現現場控制。 pic單片機系列是美國microchip公司推出的,採用risc結構的高性價比嵌入式控制器,其高速度、低壓工作,低功耗,強大,低價otp技術,體積小巧等都體現了單片微控制器工業的新趨勢;作為信息的傳輸媒體, sms短消息服務是gsm網路的一種基本業務,以其低成本、高可靠性的方便快捷通信方式成為人們日常生活和商業交的重要載體;集控制技術、光技術、通信技術、數字圖像處理技術於一體的led子顯示屏為企事業的信息發布和廣告宣傳提供了廣闊的便利。
  18. In this paper, the soi technology is applied to the integrated circuit fabrication. soi technology overcomes some disadvantages of bulk silicon because of its inherent structure. it has the advantages such as no latch - up effect, low parasitic capacitance, high transconductance, simple structure, high density and good anti - radiation

    Soi技術以其獨特的材料結構有效地克服了體硅材料的不足,它具有無閉鎖效應;漏源寄生容小;較高的跨導和電流驅動能力;器件結構簡單;器件之間距離小;集成度高;抗輻射性優良等優點。
  19. Usually the low power operational amplifier is designed with rail to rail output stage, whose signal dynamirange is small, its output driving force is not strong, here it is designed with voltage displacement stage, and the strong driving force and the low power consumption in this circuit are achieved. with 5v single power, this amplifier consumes only several a, 100khz unity - gain frequency, achieves 80db dc open gain and 55 phase margin for a 100pf load capacitance and a 1m load resistance and other advantages

    通常設計的低功耗軌對軌輸出運算放大器中,由於信號的態范圍比較小,它的輸出不強,這里設計的是採用平位移路同時實現了路的強與低功耗,它具有在單壓5v的條件下,靜態工作只有幾微安,單位增益帶寬達100k ,開環增益達80db以上,相位裕度也達55度,輸出源沉達500微安以上等優點。
  20. In the seventh chapter, some of the above proposed new circuit, such as high frequency, high definition 12 - bit, 80mhz samples / s current - steering dac and fully differential r - mosfet - c bessel filter with accurate group delay, high accuracy bandgap reference and high drive capability cmos operational amplifier have been applied in communication gsm baseband i / o port integrated circuit, all the above blocks meet well with the design requirements of the system, and gain the better testing results, in the mean time, the above proposed high accuracy bandgap reference circuit als

    第七章:將本文第二章提出的高速、高精度12位、 80mhz采樣率舵結構的數模轉換器和第五章提出的r一mosfet一c結構且具有精確群時延值的貝塞爾( bessel )濾波器以及第六章提出的高精度帶隙基準壓源和高全差分運算放大器路應用於通信gsm基帶輸入/輸出埠晶元,滿足系統設計要求並取得了令人滿意的實測結果。
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