電淀積 的英文怎麼說

中文拼音 [diàndiànjī]
電淀積 英文
electrodeposition
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 淀 : Ⅰ動詞（沉澱） form sediment; settle; precipitateⅡ名詞（淺的湖泊, 多用於地名） shallow lake
  • 積 : Ⅰ動詞（積累） amass; store up; accumulate Ⅱ形容詞（長時間積累下來的） long standing; long pending...
  1. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias-sputter deposition (see section 9. 2. 4) or by using planarization.

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見924節）或用平面化工藝來近似獲得。
  2. For xrd, ellipsometry examinations, single - side - polished si ( lll ) wafers were used as substrates and for resistance measurement, glass was used and for infrared examination, double - side - polished si ( lll ) wafers were used and for ultraviolet - visible spectrophotometry, double - side - polished quartz wafers were used and for tem micrograph and electron diffraction pattern observation, cu nets deposited by formvar film were used. the cu - mgf2 cermet films were from 50 to 600nm thick

    用於xrd分析、橢偏測量的單拋si （ 111 ）晶片和電阻測試的載玻片上淀積膜厚約為600nm ；用於ir測試的雙拋si （ 111 ）晶片和uv測試的石英玻璃片上淀積膜厚約為250nm ；用於透射電鏡分析的樣品則淀積在400目銅網上的支撐formvar膜上，膜厚約為50 100nm 。
  3. First, the modern electronic audio - visual media must refer to and absorb the essence of the classical arts to enhance its own communication quality and culture, and form its characteristic esthetic system and unique expression way, and become the most vital mass media ; at the same time, the widespread electronic audio - visual media become the effective carrier and communication means of classical arts, and bring new vitality and enlightenment to each traditional art which has already moved towards the bleak decline. each traditional art gives out brilliance and vigor on the screen of audio - visual media

    首先，現代電子視聽媒體只有借鑒和吸收已有千年積淀的經典藝術的菁華，才能提高自身傳播內容的質量，形成深厚的文化底蘊，才能形成具有現代媒體特色的審美體系和獨特表達方式，才能成為最具有生命力的大眾傳播媒介；同時，廣泛普及的電子視聽媒體又成為經典藝術的有效載體和傳播手段，為已經走向蕭條衰落的各種經典藝術帶來了新的生機和啟示，傳統藝術形式在視聽傳播媒體的屏幕上煥發出新的光彩和活力。
  4. The ultra - thin er layers with the thicanesses in the range of 0. 5 ~ 3 monolayer ( ml ) are formed by electron beam evaporation on si ( 00l ) substrate at room temperature in an ultra - high vacuum system. after annealing at lower temperatures, ordered simcfores form on the surface. the trallsition of the surface reconsmiction pattem from ( 2 x l ) to ( 4 x 2 ) with the increase of er coverage up to l ml is observed by the reflective high energy electron diffraction ( rheed ) and low energy electron diffraction ( leed )

    本文是關于硅（ 001 ）襯底與電子束淀積的鉺、鉿原子反應形成的超薄膜的界面與表面性質的研究，以及在該襯底上出現的共振光電子發射現象，包括了以下四個方面的工作： 1鉺導致的硅（ 001 ）襯底上的（ 4 2 ）再構研究利用反射高能電子衍射和低能電子衍射，在室溫淀積了0
  5. Various factors affecting the refractive index and the deposition rate of the deposited films are studied to optimize growth conditions of the films. the microstructures and optical properties of the films are characterized by a prism coupler, a fourier transform infrared spectroscopy ( ftir ) and an atom force microscopy ( afm )

    研究了薄膜折射率和淀積速率與工藝參數之間的關系，通過棱鏡耦合儀、傅立葉變換紅外光譜、原子力顯微鏡、掃描電子顯微鏡等測試手段，分析了薄膜的結構和光學特性。
  6. This sort of membrane has excellent physics and chemical properties. farther studies indicates that this film is a kind of hydrogenated carbon films containing amino groups, it posses the network configuration of diamond - like carbon, the amino - group is in the networks

    通過紅外光譜分析，結合其物理性能和化學傳感特性，對射頻輝光放電制備的正丁胺淀積薄膜的化學組成與微觀結構做了初步分析和研究。
  7. Abstract : based on the ahievement of epitaxial growth in several perovskite oxide films, we discuss the importance of substrate temperature ( ts ) and substrate material in the epitaxial growth of perovskite oxide thin films. influences of ts on growth orientation and epitaxial threshold temperature were observed. the results indicate that during the growth of the oxide films the phase formation and growth dynamics should be taken into consideration. the threshold temperature for epitaxial growth depends on the substrate materials. this demonstrates the influence of substrate material on the initial nucleation and epitaxial growth

    文摘:在成功地外延生長超導、鐵電、鐵磁等多種性質的鈣鈦礦結構氧化物薄膜的基礎上，討論影響氧化物薄膜外延生長的一些因素.考慮到相形成和薄膜生長動力學，在利用脈沖激光淀積法外延生長氧化物薄膜中襯底溫度是十分重要的工藝參數.襯底溫度對成相和生長薄膜的取向都有影響.考慮到薄膜是首先在襯底表面成核、成相併生長.因此襯底材料晶格的影響是不容忽視的.觀察到襯底材料對薄膜外延生長溫度的影響.在適當的工藝條件下，利用低溫三步法工藝制備得到有很強織構的外延薄膜.這突出表明界面層的相互作用對鈣鈦礦結構薄膜的取向有著相當大的影響
  8. So we applied low temperature techniques to manufacture the sense film of qcm sensors. at low temperature and low pressure, with n - butylamine as the carbon source material, and with dry hydrogen as the carrying gas, we applied r. f. glow discharge plasma to preparation the working film for the qcm sensors

    在「實驗與分析」一章中較為詳細地闡述了採用等離子體化學氣相淀積的方法，以正丁胺作為碳源物質，通過射頻輝光放電在低溫低壓條件下制得了正丁胺等離子體淀積膜。
  9. For vlsi, a plane surface may be approximated by depositing the interlevel dielectric by bias - sputter deposition ( see section 9. 2. 4 ) or by using planarization

    對于超大規模集成電路的平面狀表面，可以用偏置濺射淀積法的層間介質淀積（見9 2 4節）或用平面化工藝來近似獲得。
  10. 2. from the si and er core ievel spectra and the si valence band spectrum a rather detailed description of the er / si ( 00l ) interface formation is presented. the following results can be extracted

    2鉺硅（ 001 ）界面、表面及鉺硅化物最初形成過程研究首先利用同步輻射光電子能譜方法研究了室溫下鉺在硅（ 001 ）表面的淀積和退火過程。
  11. ( 1 ) two edt monomer synthetic paths have been investigated. ( 2 ) using the method of depositing the pedt film on the glass base, the affect of processing and environmental conditions - - such as the polymerizing temperature, the state of the polymer material, the polymerization correctives, the drying temperature, and the amount of the solution etc. - - to the pedt material ' s electroconductivity has also been examined in this paper

    主要研究內容包括： （ 1 ） edt單體合成路線的兩種方案，以及具體的制備過程； （ 2 ）在玻璃基片上淀積pedt膜層，研究了聚合溫度、聚合物狀態、聚合改良劑、烘乾溫度、溶劑含量等工藝及環境條件對pedt材料電導率和成膜速度的影響。
  12. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底，採用常壓化學氣相淀積（ apcvd ）方法在其上異質外延生長sic薄膜的技術，分析了cvd法生長sic的物理化學過程，通過實驗提出sic薄膜生長的工藝條件，並通過x射線衍射（ xrd ） 、 x射線光電子能譜（ xps ） 、光致發光譜（ pl譜）和掃描電鏡（ sem ）對外延薄膜的結構性質進行分析。
  13. The fabrication methods such as molecular - beam epitaxy and metal - organic chemical vapor deposition and experimental studies of their properties have been reported, and theoretical studies mainly concentrate on the impurity binding energy varying the size of the wire, the effect of the applied electric field or magnetic field, and photoionization of impurities

    在實驗上已經用分子束外延和金屬有機化學汽相淀積等技術對其物理性質進行了廣泛的研究，而理論上的研究主要集中於研究量子線的尺寸對雜質束縛能的影響、外加電場或磁場的作用及雜質的光致電離效應。
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