電硅熱法 的英文怎麼說
中文拼音 [diànguīrèfǎ]
電硅熱法
英文
electro-silicothermic process-
The temperature distribution on the high temperature side of an electric tunnel furnace is analysed and simulated on the basis of the principle of thermal radiation by the way of thb ( thermal heat balance ). the heated silicon carbon sticks are decomposed into innumerable tiny heating faces, which exchange the heat with the heated materials. a numerical model based on the radiation intensity law is constructed to calculate the energy absorbed by the heated materials and simulated by a computer. the results showed that the even distribution of temperature can be obtained by optimizing the arrangement of the silicon carbon sticks according to the calculation results to make the structure design more reasonable. these calculation results have been used in the practical designs and the expected objectives achieved
利用熱輻射原理，採用熱平衡法對電熱隧道窯的高溫恆溫區溫場進行了分析和模擬.計算中將發熱棒分解為無數微元發熱面與燒結體進行熱交換，依據輻射強度定律，建立了燒結體接收能量的數學模型，並用計算機進行了模擬計算.結果表明，依據模擬結果來優化硅碳棒的排布，可使結構設計更加合理，進而可以獲得分佈均勻的恆溫區溫場.計算結果已在窯爐設計中應用，實踐效果良好We select ni / cr alloy resistor as element together with ceramic embedding hearth ; select small flat - and - disc heat - even hubby ceramic sample holder, select ni / cr & ni / si thermoelectric couple ( type k ) as thermoscope with threads 0. 5 mm in diameter which is installed in the middle of the holders symmetrically ; select aluminum silicate fire - retardant fiber as materials for heat preservation ; design some hardware, for example temperature controller & transporter, signal amplifier etc ; design controlling curve to heat stove ; and introduce the method of least squares nonlinear regression and subsection function to deal with data. in order to obtain the reasonable operation conditions and operation curve, we have also done many theory analysis and experiment discussions
通過理論和試驗探討，選用鎳鉻合金電阻絲作為加熱元件，配以陶瓷質埋入式爐膛；選用陶瓷質小尺寸扁平?圓盤均熱塊體型樣品支持器；選用0 . 5mm絲徑鎳鉻?鎳硅熱電偶（ k ）作為測溫元件；熱電偶對稱安置在樣品支持器容器的中部；選用硅酸鋁耐火纖維作保溫材料；合理選用和設計了溫度控制器、溫度變送器、信號放大電路等硬體；採用升溫曲線來控制爐膛供熱過程；採用最小二乘法非線性回歸與分段函數相結合的曲線模擬方法，進行圖形處理。Limited to historical reasons, conventional paint drying methods for lpg bottle are all infrared ray heating, which has some advantages such as simple system, convenient operation and fast on - off, but it has some disadvantages such as higher energy cost and maintenance costs
限於歷史原因，傳統鋼瓶烤漆工藝均採用遠紅外電加熱烤漆方法，其優點是系統簡單、操作方便和起停迅速。但其缺點也非常明顯，烤漆能耗費用較高，遠紅外電加熱硅板更新費用較多。The diamond film is grown using a hot filament chemical vapor deposition, basing on the diamond micro - grits on silicon substrates
實驗中外延金剛石薄膜採用熱絲cvd法生長，生長於事先電泳沉積在硅襯底的金剛石微粒上。Silicon nitride ( normally si3n4 ) has been widely used in such fields as micro - electronics and optoelectronics as a promising film material because of its excellent property. many researches have been made on silicon nitride, especially on preparation for it with all kinds of cvd ( chemical vapor deposition ). but the growth mechanism and kinetics of direct - nitridation in nitrogen are not investigated in detail, especially few work has been done on direct - nitridation of silicon wafer in nitrogen during heat treatment
氮化硅（ si _ 3n _ 4 ）具有許多特殊的優越性能，是一種前景廣闊的薄膜材料，並已廣泛應用於微電子、光電子領域，人們對此做了大量的研究，但主要集中在用各種化學氣相沉積的薄膜制備上，對直接氮化法的機理和動力學研究較少，特別是矽片在氮氣保護的熱處理條件下的直接氮化行為研究更少，甚至對矽片在熱處理條件下能否與惰性的氮氣發生反應等問題依然存在爭論。The silicon micro - machining technology is used to fabricate the bi - layered silicon microcantilever resonators, the excitation of silicon micro - resonators is achieved using electro - thermal method via fabricating thermal excitation resistance on the silicon microcantilever beam
利用硅微機械加工工藝製作了雙層結構硅微懸臂梁諧振器，通過在硅微懸臂樑上製作的熱激勵電阻，用電熱方法對硅微諧振器實現了激振。The finite element method ( fe '. i ) is adopted to analyze the effects of the numbers of coil turns, current intensity and current frequency upon the rate of joule heat generation in details. the thermo - radiation analytical countermeasures of various types are adopted to carry out the numerical analysis of the effects of the crucible with different shapes and sizes and the blind holes with different depths opened in the tops of crucibles as well as coil positions upon the thermal field distribution whereby solving the main problem of field the thermo - field design of the induction - heating sic crystal growth system. a new combination idea of the thermo - field design obtained by means of the united design of the thermo - insulator and blind holes has been presented
採用有限元分析方法對線圈匝數、電流強度、電流頻率等對焦耳熱產生速率的影響進行了詳細的分析討論；採用不同的熱輻射分析策略，對不同坩堝形狀、坩堝頂部開設不同深度的盲孔以及線圈的位置等對熱場分佈的影響進行了數值分析，解決了感應加熱碳化硅晶體生長系統熱場設計的主要問題，提出了通過絕熱層與盲孔的聯合設計獲得所需熱場設計的思路，給出了根據軸向溫度梯度的波動對線圈位置實行動態調節以控制熱場的理論依據。In this paper ， first, the author drew some important conclusions by analyzing several technical factors and experimental conditions which would have great influence on the quality of diamond thin films during mpcvd process ， including gas proportion ， the power of microwave ， the plasma ' s location, the nucleation technique, etc. finally ， the author has successfully deposited nanocrystalline diamond thin films with 300nm crystal particles on the slick surface of silicon by using ch4 / h2 gases in the mpcvd system ， and the nanocrystalline diamond thin films was proved to have good field emission performance. all these researches will make the foundation for the field emission cathode of diamond films
本論文中，作者分析了mpcvd方法中氣源成分比、微波功率、等離子體球的位置、成核技術等各種工藝條件對金剛石薄膜質量的影響，並總結得到了一些有意義的結論；同時，在自行研製的mpcvd沉積系統上，於4 - 7kpa 、 1000左右的熱力學條件下，採用ch4 / h2氣源氣氛在光滑的硅襯底上制備出了晶粒尺寸在300納米以下的納米晶金剛石薄膜，測試得到了較好的薄膜場致電子發射性能，為金剛石薄膜場致發射冷陰極的研究工作打下了實驗基礎。The writer also elaborates the working principles of solar cell and various factors that may lead to bad conversion efficiency of solar cell, emphasizes on three thin film solar cells ( amorphous silicon thin film solar cell, poly silicon thin film solar cell, cuinsea thin film solar cell ), analyzes their structure, photovoltaic effect, producing techniques, and conversion efficiency etc., and discusses how to reduce the effects of sw in solar cell and how to improve the conversion efficiency
闡述了太陽電池的工作原理，論述了影響太陽電池轉換效率的因素，並重點介紹了當前研究比較深入的三種熱點薄膜太陽電池：非晶硅薄膜太陽電池（ a - si ） ；多晶硅（ poly - si ）薄膜太陽電池：銅銦錫（ cis ）薄膜太陽電池。分析了它們的結構、光伏效應、制備工藝、轉換效率等，探討了如何減小太陽電池的光致衰退效應和提高薄膜太陽電池的轉換效率的方法。Based on summarizing the actual research status, developing prospects, and the characteristic of different ways in preparation for silicon based composite, three ways were chosen, which was pyrolysis for si - phenolic resin prolyzed carbon material, using different catalyzer to prepare for si - o network coated silicon and carbon complex composite, easily chemical and deoxidizing reaction for super tiny metals mixed silicon and carbon complescomposite
通過高溫熱解法制備了硅-酚醛樹脂（ pf ， phenolicresin ）熱解碳材料。在700的條件下制備了硅-酚醛樹脂熱解碳材料，發現si和熱解碳的質量比為3 : 7時材料具有最優異的性能，首次脫嵌容量為394 . 7mah ? g ~ （ - 1 ） ，充放電效率為50 % 。The theoretical analysis method is used to study the electro - thermally excited mechanism of silicon microcantilever beam so as to obtain the temperature field distribution under the electro - thermal excitation of the microcantilever beam and to deduce thermal moment force of the electro - thermal excitation of the plated film bi - layer silicon - microcantilever beam
摘要用理論分析方法研究了硅微懸臂梁的電熱激振機理，得到了微機械懸臂梁電熱激勵下的溫度場分佈，並推導出了鍍膜雙層硅微懸臂梁的電熱激勵熱力矩。分享友人