電致化學發光 的英文怎麼說

中文拼音 [diànzhìhuàxuéguāng]
電致化學發光 英文
ecl
  • : Ⅰ名詞1 (有電荷存在和電荷變化的現象) electricity 2 (電報) telegram; cable Ⅱ動詞1 (觸電) give...
  • : Ⅰ動詞1 (給與;向對方表示禮節、情意等) deliver; send; extend 2 (集中於某個方面) devote (one s ...
  • : Ⅰ動詞1 (學習) study; learn 2 (模仿) imitate; mimic Ⅱ名詞1 (學問) learning; knowledge 2 (學...
  • : 名詞(頭發) hair
  • : Ⅰ名詞1 (照耀在物體上、使人能看見物體的一種物質) light; ray 2 (景物) scenery 3 (光彩; 榮譽) ...
  • 發光 : 1 (發出光來) give out light; shine; be luminous; brighten; fulgurate; flash; glow; sparkle; gli...
  1. The electrogenerated chemiluminescence behavior of oleanlic acid

    齊墩果酸電致化學發光行為的研究
  2. The causes resulting in thickness dependence of the optical properties of the films were discussed on the basis of the pl, optical transmission, and afm analyses. we understood that zno is an excellent material for uv detector by research on uv photoconduction

    綜合譜、透射譜和薄膜表面形貌,對導性質隨膜厚變的原因進行了討論;研究了厚膜zno的紫外導時間響應,得出zno材料具有很好的紫外探測性能結論。
  3. Indium stannum oxide ( ito ) as semiconductor have caused a great deal of interest due to their prominent electro - optical behavior. ito has high prominent transmittance, high infrared reflectance, good electrical conductivity, ito applied as gas sensors, photovoltaic devices, heat reflecting mirrors, solar cells, flat panel displays, liquid crystal displays, electroluminescent, devices and organic light - emitting diodes ( oled ) etc. although preparations and applications of ito films have been studied deeply. nano - ito composites hardly studied

    銦錫( ito )是一種高簡並的n型半導體,由於具有導性,可見高透過率,紅外反射性,穩定的性,被廣泛應用於熱反射建築玻璃、抗靜塗層,太陽能池,熱射鏡,平板顯示器和液晶顯示屏,傳感器,有機二級管( oled )等方面,國內外對高質量的ito薄膜的制備和應用進行了深入的研究,但是很少有ito納米粒子與高分子材料復合的報道。
  4. This is attributed to the stabilization of the excited state of intermediate of luminol by the interaction with the positively charged pee modified layer

    荷正的聚乙烯亞胺修飾分子與魯米諾激態3 -氨基鄰苯二甲酸陰離子間靜相互作用而導的激態穩定性增加;對魯米諾分子的的增強起著關鍵作用。
  5. Based on the mathematic model of oct, it is proved that oct is of the open loop characteristic, which for the first time explained the reason why oct itself can not meet the demand of precision used in practice. since it is impossible for oct itself to realize a close loop structure, the only way to improve the precision of oct is with the help of the new independent variables

    從模型分析出,在基於流傳感原理的oct的完整數模型和系統特性方框圖的基礎上證明了oct的開環機理,首次從理論上解釋了外界因素導流傳感的測量精度始終達不到實用要求的原因在於oct具有開環系統特性,而且,從oct本身是不可能實現閉環結構的。
  6. Determination of benproperine phosphate in oral solution with capillary electrophoresis - eelectrochemiluminescence

    電致化學發光法測定口服液中磷酸苯丙哌林的含量
  7. The photo - induced phase transition of the different light intensities, photo - energies and directions of the polarized light is investigated. it suggested that the photo excites the down spin eg electrons and destroys the spin order system of the thin films. the relation between the he - ne laser reflectivity of the thin film, applied current and resistance was analyzed by the optics theory of solid state physics

    子通過激e _ g向下子的躍遷,從而改變材料自旋極方向,影響體系的輸運行為;首次研究了cmr薄膜的激反射率和偏置流的關系,並用固體理論對其定性分析,表明反射率的變是由於場引起材料的晶格畸變,改變了極率,從而導材料的折射率和反射率生改變。
  8. Polymer networks have been produced in a variety of liquid crystal phases in cells without surface treatment. the liquid crystal / monomer mixtures are prepared using a ferroelectric liquid crystal and a diacrylate monomer. the polymerisation of the monomer is carried out by uv curing the mixture when it was kept in a specific phase which can be obtained by controlling the temperature of the ferroelectric liquid crystal. both the monomer and the polymer network will depress phase transition temperatures. the effects of the polymer network on the packing arrangement of the ferroelectric liquid crystal molecules are examined by means of optical microscopy. the molecular packing arrangement of the ferroelectric liquid crystal in a specific mesogenic phase is frozen on the formation of a polymer network in the ferroelectric liquid crystal in that phase. the existence of the diacrylate based polymer network can improve the electrooptical switching of the ferroelectric liquid crystal

    在灌裝于未經表面處理的樣品盒內處于不同狀態的液晶中制備聚合體網路.液晶/單體混合物由鐵液晶和雙丙烯酸單體製成.單體的聚合通過維持該混合物處在一定的液晶態的條件下經紫外線固來完成.不同的液晶態可通過控制鐵液晶的溫度來獲得.雙丙烯酸單體或聚合體網路的存在會導液晶載體的相變溫度降低.通過顯微鏡可觀察聚合體網路對鐵液晶分子組合排列的影響.結果現:在某一液晶態中鐵液晶分子的組合排列可被在該液晶態中聚合而成的聚合體網路所穩定,雙丙烯酸基聚合體網路的存在可改良鐵液晶的開關特性
  9. Originally from green concrete and concreting in minus - temperature, the critical strength of frozen injury of minus - temperature calcium - enriched fly ash concrete and the rule of strength development are studied in this paper. through the test of resistance of freezing - thawing cycles and chloride diffusivity, the influence of curing system and calcium - enriched fly ash on the performance of concrete are studied ; and through the modern methods ( xrd, sem, and so on ), the hydration products, pore structures and microstructure are studied

    本文既著眼于綠色混凝土,又力於混凝土的負溫施工,研究了增鈣粉煤灰混凝土的抗凍臨界強度及其負溫抗壓強度展規律;通過快凍試驗和氯離子滲透試驗,研究養護制度和增鈣粉煤灰摻合料對混凝土耐久性能的影響;並通過顯微鏡法、掃描鏡和xrd等現代分析方法,研究負溫增鈣粉煤灰混凝土的水產物、孔結構和顯微結構。
  10. According to the requirement of innovation engineering in chinese academy of sciences, the work in this thesis focused on fabrication of soi material with epitaxial layer transfer of porous silicon and study of luminescence of modified porous silicon, and we obtained the following new results : the effect of doping and anodizing condition on the properties of porous silicon, including the microstructure, ciystallinity and surface morphology, has been studied systematically. it is found that the porous silicon and substrate have the same orientation and share a coherent boundary. but at the edge of pores, the lattice relaxes, which induces xrd peak moving of porous silicon

    Soi技術和多孔硅納米技術研究是當今微子與子研究領域的前沿課題,本文根據科院創新工程研究工作的需要,開展了多孔硅外延層轉移eltran - soi新材料制備與改性多孔硅性能的研究,獲得的主要結果如下:系統研究了矽片摻雜濃度、摻雜類型和陽極氧條件等因素對多孔硅結構、單晶性能和表面狀態的影響,現多孔硅與襯底並不是嚴格的四方畸變,在多孔硅/硅襯底的界面上,多孔硅的晶格與襯底完全一,但在孔的邊緣,多孔硅的晶格生弛豫。
  11. In this paper, the growth technology is presented for epitaxial silicon carbide films on sapphire with a buffer layer by atmospheric - pressure chemical vapor deposition ( apcvd ) process. the effect of temperature and precursors flow rates on the growth of silicon carbide films by chemical vapor deposition is analyzed. the structural properties of the films grown on sapphire compound substrate are studied by x - ray diffraction ( xrd ), x - ray photospectroscopy ( xps ) and photoluminescence spectroscopy

    本論文提出了在藍寶石上引入一層緩沖層材料形成復合襯底,採用常壓氣相淀積( apcvd )方法在其上異質外延生長sic薄膜的技術,分析了cvd法生長sic的物理過程,通過實驗提出sic薄膜生長的工藝條件,並通過x射線衍射( xrd ) 、 x射線子能譜( xps ) 、譜( pl譜)和掃描鏡( sem )對外延薄膜的結構性質進行分析。
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