電荷器件模型 的英文怎麼說

中文拼音 [diànhéqìjiànmóxíng]
電荷器件模型 英文
charged device model
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 荷 : 荷名詞（蓮） lotus
  • 器 : 名詞1. （器具） implement; utensil; ware 2. （器官） organ 3. （度量; 才能） capacity; talent 4. （姓氏） a surname
  • 件 : Ⅰ量詞（用於個體事物） piece; article; item Ⅱ名詞1. （指可以一一計算的事物） 2. （文件） letter; correspondence; paper; document
  • 模 : 模名詞1. （模子） mould; pattern; matrix 2. （姓氏） a surname
  • 模型 : 1 （仿製實物） model; pattern 2 （制砂型的工具） mould; pattern3 （模子） model set; mould patter...
  1. Mathematical model of staring ccd detector arrays

    凝視型電荷耦合器件探測器數學模型
  2. With the use of finite method we have developed computer simulation software for vacuum microtriodes with wedge - shaped and cone - shaped cathode on the basis of stduying deeply the field emission theory of vacuum microelectronics. the software included field section, grid point numbering, and the calculation of electric currents, transconductance and cathode capacitance, moreover, it can simulate the properties of vacuum microeletronic with variant structures and sizes. the relationship was studied and simulated among electic properties and device structures, sizes and cathode materials etc. the optimized design of vacuum microtiode was proposed

    本文在深入研究真空微電子器件場致發射理論的基礎上，根據圓錐形、楔形陰極真空微電子三極體的不同特點，分別建立了物理和數學模型，在考慮空間電荷密度影響的前提下，以有限元法為基礎採用迭代的方法計算出真空微電子三極體內的電勢分佈情況，繪制出了等勢線、電子軌跡線，並得到了器件電學性能隨幾何參數的變化情況。
  3. Using two - dimensional numerical simulation software, analyze the affect of isolated - trench ' s parameters on the breakdown voltages of three - class bipolar power devices ( whose ideal breakdown voltages correspond to 40v, 70v and 100v ), which include width, depth, isolated material ' s dielectric constant, fixed interface - charge and field plate located at the top of deep - trench termination

    利用二維數值模擬軟體分析了影響三類典型應用的雙極功率器件（對應的理想擊穿電壓bv _ （ cro ）分別為： 40v ， 70v ， 100v ）擊穿電壓的諸多因素（主要包括阱寬度、阱深度、阱內填充介質、界面固定電荷、阱區頂端場板） 。
  4. Charge qs was located near the interface of silicon and oxide. with more charge, the field of buried oxide was improved up to the critical breakdown field basis on entirely continuity of electric displacement vector, and then the vertical breakdown voltage was raised. the comparisons between analytical and simulative results proved its availability of this model to interpret the vertical blocking mechanism

    該模型認為，將界面電荷qs引入i層si / sio2的si界面，根據電位移矢量的全連續性，界面電荷qs越多，使i層內電場增加，直至sio2的臨界電場，從而提高縱向擊穿電壓vb . v ，很好得解決了器件的縱向耐壓問題。
  5. To the cabin which is designed by the forth department chongqing communication college, the model which includes the air in the cabin, generator set and public muffler is built integer, meshed, and added by boundary condition and load. the normal k - model etc are used to be turbulence model of the air in cabin respectively, the turbulence model is calculated by simplef or simplen algorithm, and by the first order accurate msu or the second order accurate supg in advection discretization scheme

    論文對艙內空氣、發電機組和公用消聲器進行了整體建模和網格劃分，施加機組艙模型的邊界條件和載荷，採用標準k -等多個模型來分別模擬機組艙通風散熱的空氣湍流流動，採用simplef和simplen兩種不同的數值演算法以及一階msu和二階supg的對流項分離方案來對流動模型進行運算。
  6. In addition, the breakdown and the degeneration of pcss " s are serious problems in the applications. in this dissertation the mode of luminous charge domain is perfected ulteriorly by deeply studying the dynamics characteristic of high - field domain of the trans - electron device with experiment stability of nonlinear pcss

    本文在通過對轉移電子器件偶極疇的動力學特徵作了深入分析的基礎上，結合非線性pcss ' s的穩定性實驗，對非線性pcss ' s的光激發電荷疇理論模型作了進一步的完善。
  7. In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease

    對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。
  8. One of effective ways of overcoming space charge effect is to fill plasma in high power wave apparatus, by the neutralization between plasma and space charge, the transfer current is going to be largely enhanced, thereby out - power is going to be largely increased. meantime, due to there are many fluctuating modes in plasma, so it is able to bring a new beam - wave interaction mechanism, by it people can invent some new type high power microwave apparatus

    高功率微波裝置中的電流密度很大，空間電荷效應強烈，影響了功率的提高，克服空間電荷效應的有效方法是在高功率微波器件中填充等離子體，由於等離子體對空間電荷的中和作用，傳輸電流會大大提高，從而大幅度提高輸出功率，同時由於等離子體中存在多種波動模式，有可能帶來新的注波互作用機制，發展新型的高功率微波器件。
  9. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
  10. The breakdown mechanism of soi ldmos with located charge trenches was analyzed in this thesis. the interface charge model for the breakdown voltage was proposed

    本課題分析具有局域電荷槽結構的soildmos的縱向耐壓機理，提出界面電荷耐壓模型，這是迄今為止所見報道的高壓soi器件理想的新模型。
  11. Firstly, the theories relative to radiation effect are discussed in brief, including some models of interface trap formation and process of producing oxide trap charge in radiated mos devices. besides, the radiation effects at low dose rate and the mechanism of radiation hardening for bf2 implantation are reviewed too

    首先，對有關輻照效應的理論進行了簡要的敘述，介紹了輻照過程中氧化物陷阱電荷的產生過程以及界面態建立的一些模型，另外，還對低劑量率輻照效應以及bf _ 2 ~ +注入加固mos器件的機理做了回顧。
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