電荷遷移 的英文怎麼說

中文拼音 [diànhéqiānyí]
電荷遷移 英文
charge migration
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 荷 : 荷名詞（蓮） lotus
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. Metals and other substances that allow the motion of electric charge through them are called conductors.

    金屬和其他容許電荷在其中遷移的材料叫做導體。
  2. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  3. The dark decay of the spectral change was also studied. two recovery time constants were obtained by fitting. one is 2. 5 hours and the other is longer

    研究表明這種紫外光誘導的電荷遷移帶變化是由於eu ~ （ 3 + ）離子周圍局域環境發生的變化引起的。
  4. Compared with micro - sized y2o3 : eu and gd2o3 : eu phosphors prepared by a conventional method, nanosized y2o3 : eu and gd2o3 : eu synthesized by the present work, gives a clear blue shift in the emission spectrum, and a clear red shift in the excitation spectrum

    同時，發現了納米晶一些新奇的發光性質，即：發射光譜藍移現象，激發光譜紅移中電荷遷移帶（ ctb ）明顯紅移，猝滅濃度提高等。
  5. ( 2 ) the kinetics of mesostructure formation is studied. the induction time formation of a white precipitation decrease with the concentration of [ oh " ]. the effect of salts is presented because of adding the re3 + ions into neutral solution containing surfactant. the mechanism of mesostructure formation through " hydrogen - bonding interaction, complex - bonding interaction and a local reconstruction process of the frameworks "

    （ 6 ）當稀土離子進入hms樣品骨架，靠近外來原子的對稱a o st會產生小的變形。 st o st振動帶由於配位金屬電荷遷移躍遷而變成拉曼活性模。 （ ）用ftth光譜研究了a oh凝聚反應動力學，建立了a oh凝聚反應動力學方程，求得其凝聚反應活化能為28士7kj in 。
  6. Finally, after the long - term ion migration test, we analyzed the relation between the current and accumulative charge with the test time, computed the ion mobility and migration distance, and analyzed the distribution variety of na + and k + in the test samples

    對10支試品進行了長期離子遷移試驗，測量了泄漏電流曲線和累計電荷量隨時間變化曲線，計算了試品的離子遷移率和遷移距離，並對試品na ~ + 、 k ~ +的含量進行了化學分析。
  7. In respect of sic devices, an analytical model of 6h - sic jfet to well match the experimental results is proposed. the radiation response of sic jfet in room temperature to 300 c is simulated with the analysis for the neutron irradiation effect such as carrier removal, mobility degradation and space charge density decrease

    對sicjfet的電參數如電子濃度，遷移率，電阻率和空間電荷區密度在中子輻照下的變化進行了分析，提出了中子輻照下6h - sicjfet的器件模型，利用此模型對sicjfet在室溫和300時的輻照響應進行模擬的結果和實驗值相符。
  8. The charger - transferred processes of the charge - transferred states are displayed in order to understand their maximal two - photon absorption cross sections

    中心部分的特性有關。同時，我們還給出了分子電荷轉移態的電荷遷移過程。
  9. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  10. A model of the sic pn junctions irradiated by neutron is presented. the effects of radiation induced oxide trapped charge and sic / si02 interface state density on inversion layer mobility is studied systematically

    在輻照的電離效應方面，研究了輻照在sicmos氧化層中引入的陷阱電荷對mos溝道反型層遷移率的影響。
  11. The effect of interface state charges on the threshold voltage, drain current, transconductance and field - effect mobility of n - channel sic mosfet is analyzed with numerical method by establishing the model of the interface state density exponential distribution

    建立界面態密度的指數分佈模型，用數值方法較為詳細的分析了界面態電荷對n溝mosfet器件閾值，漏電流，跨導和場效應遷移率的影響。
  12. Finally, the electron mobility in 6h - sic inversion layers is studied by single - particle monte carlo technique. the simulation results fit the experimental data very well

    對6h sic反型層遷移率進行的moniecaro模擬結果表明，庫侖中心的相關性，庫侖電荷量及電荷中心和sic侶。
  13. Detailed emission and excitation spectral characteristics have been analyzed and discussed. in addition, spectral red - shift has been found in both charge transfer bands in nanocrystalline y2o3 : eu 3 + compared to the bulk material. the number ratio of s6 sites to c2 sites is also smaller in nanocrystalline y2o3 : eu3 + than that in the bulk one

    與體材料相比，兩種格位的電荷遷移帶在納米材料中都發生紅移；相對于c _ 2格位的電荷遷移帶， s _ 6格位的電荷遷移帶強度在納米材料中比在體材料中明顯降低。
  14. The lifetime of particles co - doped with li + and na + increased as compared to that of un - doped one. however, the lifetime decreased as co - doped with other dopants. in addition, we also studied that ultraviolet ( uv ) light - induced spectral change in eu3 + - doped aluminosilicate glass and red to blue up - conversion emission of tm3 + -, yb3 + - doped y2o3 nanocrystals

    （ 2 ）在紫外光輻照下， eu ~ （ 3 + ）摻雜的氧化物玻璃電荷遷移帶強度降低，通過研究輻照與激光的功率密度、波長的關系，發現這種變化屬于單光子過程，並具有頻率選擇性。
  15. On the base of the iec standard of dc suspension insulators, we designed a new ion migration test for 500kv dc ceramic support insulators, including the regulation between the bulk resistance and the temperature, the test samples, the test voltage and the temperature for long - term ion migration test, and the amount of accumulative charges

    以懸式絕緣子離子遷移試驗標準為基礎，完整的設計了500kv直流支柱式瓷絕緣子離子遷移試驗，其中包括研究了試品體積電阻隨溫度場強變化的規律，成功的設計了試驗試品，確定了長期離子遷移試驗電壓（ 40kv ）和試驗溫度（ 130 ） ，計算了50年累計電荷量（ 0 . 173c ） 。
  16. The results indicated that the co - dopants of li +, na + and k + could promote the crystallinity of samples. however, the co - doping of mg2 + and al3 + drastically causes the structure disorder. ( 4 ) the fluorescence decay curves of 5do of samples were measured under the excitation of 266 nm laser

    比較發現，摻雜不僅可以調節納米材料的尺寸，還可以影響材料的結晶性，尤其是後者對發光性質和熒光動力學過程，如熒光強度、電荷遷移帶的位置、 ~ 5d _ 0的壽命等，產生強烈的影響。
  17. Decomposition of excitation spectra shows that the charge transfer band of eu3 + at the s6 site lies in the high - energy side of that at the c2 site, resulting in that the energy transfer from the host prefers to the s6 site

    光譜分解得出s _ 6格位的電荷遷移帶位於c _ 2格位電荷遷移帶的高能側， y _ 2o _ 3基質傾向于向s _ 6格位進行能量傳遞。
  18. As the total negative surface charge of such complexes matches the surrounding charge density of the matrix, the sds - protein complex stops migrating and remains stationary, as typical of steady - state separation techniques

    當復合物表面總的負電荷與周圍基質的電荷密度一不能致時，與典型的穩態分離技術相似， sds -蛋白復合物則不再遷移而保持固定。
  19. This system is a totally automatic measuring and analyzing system with wide measuring range ( from 10 - 16 to 10 - 2a ) and high precision ( 0. 2 % ) which is first developed in china. a 50 - loop current measurement and control system, and a micro - current automatically cycling measurement system together with its three - level protecting system are developed in this thesis. additionally, a software package for this measuring system of ion migration test is developed successfully

    在對新型絕緣子離子遷移試驗測量系統研製和開發的過程中，本文設計並研製出了50路電流測量控制系統，微電流自動循環測量系統及其三級保護系統；並成功地開發出一套離子遷移試驗測量系統的軟體系統，該軟體系統不但簡潔、易用，而且實現了採用軟體對多個硬體設備的同步、協調控制，以及通過軟體對多個（達100個） i / o節點的實時控制，另外，還實現了測量數據的自動存儲以及對累積電荷量大小和發展趨勢的自動分析功能等。
  20. The charge transfer state of eu3 + ions is observed for the first time in the zno host

    首次在zno基質中觀測到eu離子的電荷遷移態。
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