電解遷移 的英文怎麼說

中文拼音 [diànjiěqiānyí]
電解遷移 英文
electromigration
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 解 : 解動詞（解送） send under guard
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 電解 : electrolyze; electrolysis; electrolyzation; galvanolysis 電解銅 [冶金學] electrolytic [cathode] c...
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. The oxide and reduce potential and the dopant concentration. the experiments of degradation methyl blue a1so showed that the photocatalytic activity could be greatly improved with vzos - loaded tio2, maybe that loading v2o5 would accelerate the electron captured and charge transferring, change the samp1e surface hydrophilic and absorption

    納米tio _ 2 - v _ 2o _ 5復合光催化劑對次甲基藍的降解實驗表明，復合v _ 2o _ 5后tio _ 2可以加速電子捕獲和電荷遷移速率，改變了樣品表面吸附親合力，使降解效率相比純tio _ 2有很大提高。
  2. There were some degration in the purified protein, but gst - ap - 2 a still had the dna binding activity in the gel shift assay. the gst - testin and gst - antn1 were used for immunolize rabbits

    雖然所提取的融合蛋白gst - ap - 2出現較多降解，但是電泳遷移率變動分析顯示其仍然具有良好的dna結合活性。
  3. This center mainly solves the problems of emv transfer, intelligent ic card issuance and issuance for increasing e - wallet application. its advantages lie in combining card - issuing of emv debit & credit application and e - wallet application in one time so that cost of recall reduces and meanwhile card e - wallet application increases ( small amount wallet and the consumption score - accumulation purse. ). it raises the card efficiency

    該中心主要解決emv遷移發行智能ic卡增加電子錢包應用的發行，其優勢在於將emv借貸記應用與電子錢包應用一次發卡完成，降低了卡片回收成本同時又增加了卡片電子錢包應用（小額消費金融錢包、消費金額積分錢包） ，提高了卡片的使用率。
  4. Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image

    相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。
  5. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  6. Before and after test the samples were studied by the scanning electorn microscope to analyze and make a comparison between the microstructures, to grasp and reveal the mechanism of the gold transportation deposition and enrichment

    本項工作選擇了該區的礦化圍巖作三軸高溫高壓試驗，並對試驗前後樣品進行掃描電鏡研究，分析對比微觀組織，研究主要賦金礦物遷移、富集過程，從而了解和揭示金的遷移和富集機制。
  7. Recently the coupling of ims equipped with electrospray ( esi ) or matrix - assisted laser - desorption ( maldi ) ion sources to mass spectrometry ( ms ) has extend its application to the biomedical area

    近年來，離子遷移譜技術與電噴霧和基質輔助解吸附等離子化技術的結合，以及與質譜技術的聯用，使得該技術的應用迅速拓展到生物醫學領域。
  8. There are distinct changes about shifts or intensity in bulk plasmon, surface plasmon, and interband electron transitions losses as a result of oxidation of specimens, and adsorption and oxidation processes can be studied through these changes. at room temperature, the formation of oxide layers on uranium and uranium - niobium alloys were found to occur rapidly upon exposure to oxygen, and the resultant oxide in each case was near - stoichiometric uo2. due to formation of niobium oxide in uranium - niobium alloys, the diffusion of o ~ ( - ) ( o ~ ( 2 - ) ) and u ~ ( 4 + ) in the interface region was prevented, and the corrosion resistance of uranium - niobium alloys to oxygen is greatly enhanced by alloying with niobium

    研究結果表明：清潔表面鈮和鈾的體等離子體振蕩所造成的電子能量損失的實驗值與理論計算值較為符合；隨著氧化程度的加劇，表面等離子體（ sp ） 、體等離子體（ bp ）以及價帶電子躍遷所造成電子能量損失的譜峰發生了明顯的連續偏移或強度的變化，這些變化可以用來分析鈾及鈾鈮合金的初始氧化過程；室溫下，鈾及鈾鈮合金很容易與氧作用，最終結果，鈾僅氧化為二氧化鈾，另外，在鈾鈮合金氧化過程中，因為有鈮的氧化物存在，不利於氧和鈾在界面擴散，增強了鈾鈮合金抗氧化性能； eels能獲得樣品表面的信息比aes更為表面，更為靈敏，但由於eels的譜線過于集中，主要在幾十ev以內，也有不容易區別和解譜的不足。
  9. Secondly, we measured the electrical properties of the ion - implanted samples by hall method ( square carrier concentration, square resistance and carrier mobility ). after comparing and analyzing, we can know that the electrical properties were affected by the difference of mn dose, the implantation of c and the annealing temperature

    其次，利用霍爾測試方法測量了每種離子注入樣品的電性質（方塊載流子濃度、方塊電阻及載流子遷移率） ，通過比較分析了解到mn元素注入劑量、 c元素的注入以及退火溫度的不同，都會對樣品的電性質產生影響。
  10. Metal aluminium film em in general ac stress has been researched with fourier decomposition, developing a metal aluminium film em life model under in general ac stress

    藉助于脈沖波形的傅里葉級數分解，研究了一般交流應力條件下金屬化電遷移的影響因素，建立了一般交流應力條件下金屬鋁膜電遷移壽命模型。
  11. This paper analyzes the status of migrants " life, and discusses the scheme of building social safeguard mechanism to them based on investment of the owner of the hydropower enterprise, and come to systems of principle at the end of the paper, so as to lessen the bad effect of the resettlement and ensure people ' s normal daily life, and then promote the prosperous development of our country ' s hydropower enterprise

    本文從分析水電站移民的實際生活情況出發，結合社會保障學的有關內容和我國現行的社會保障制度，探討由水電站業主出資，為移民建立相應的社會保障，研究了如何建立水電站移民社會保障體系，並形成了具體的、可實際操作的管理辦法，以緩沖遷移給移民造成的影響，有效保障移民的生活，解除移民的后顧之憂，促進水電事業的順利發展。
  12. Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug

    多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。
  13. After this interview, i learned about electron mobility

    通過這次訪問，我了解到電子遷移。
  14. Studies on the ion transport properties of liclo4 - pc - dmc electrolytes for lithium battery

    電解液體系離子遷移性質研究
  15. From the perspectives of the system and transfer of knowledge, similarity of ways and means and improving the ability of students in analyzing and solving problems, the author summarizes the modus operandi in the teaching of electromagnetics

    摘要從注重知識的系統性、遷移性，方法的相似性和提高學生分析問題解決問題的能力的角度，總結了在《電磁學》課程教學改革的做法。
  16. Because of the great potential of sic mosfets and circuits, in this paper, the characteristics of 6h - sic pmosfets are studied systematically, emphasizing on the effects of interface state and s / d series resistance on sic pmosfets firstly, the crystal structure of silicon carbide, the phenomena of incomplete ionization of the impurity and the fitting formula of hole mobility are presented. the characterization in space - charge region of sic pmos structure is analyzed by solving one dimension poisson equation

    研究了sic的晶體結構，分析了sic中雜質的不完全離化現象以及sic中空穴遷移率的擬和公式；用解一維poisson方程的方法分析了sicpmos空間電荷區的電特性；本論文重點分析了界面態分佈和源漏串聯電阻對sicpmos器件特性的影響。
  17. On the basis of the two - component soliton model, discussed the motion of a kink soliton in the presence of an external force and damping in hydrogen bonded systems, investigated the influence of motion and the optical model of the heavy - ions sublattice on the proton sublattice. the solution, the mobility and the conductivity of a kink soliton are found. the calculated results are in good agreement with the experiment results

    採用二分量弧子模型，討論了在外場和阻尼存在的情況下，氫鍵系統中扭結弧子的運動，研究了重離子子晶格運動和光學模對質子子晶格的影響，獲得了扭結弧子解、遷移率和電導率，計算結果和實驗值相一致
  18. The analytic results of the effects on the micromorphological structure of the film by the electrochemical condition ' s showed that the carbon is apt to improve the boundary combination between the scfs and the surface of the cathode and the seperation of the films, and that the micromorphological structure of the mpgcfs is greatly affected by the dring and the power voltage, which remarkably affluence ion move in swelling cathode film, and that higher temperature and concentration of cu2 + in the medium solution are also advanagable to the deposition of cu in scfs. the plot of deformation behavior of mpgcfs showed that the maximum strench ratio decreases and the brittleness increases due to the existence of the metal phase, and that the strengh trend of the composite films is fistly up and down followed with the content of metal phase because of the change of the role of the metal phase from acting as the physical cross - linking to weakening the films due to destroying the whole structure of the polymer

    另外它作為基體的另一個突出的優點是制備的溶脹復合膜（ scf ）中的溶劑與電解液中的溶劑相同都是水，克服了以前膜內外不同溶劑之間擴散的問題，結果使得電流最終趨於一種穩態，因此可以更好實現用電化學條件來控制mpgcf的形態結構；硬質石墨材料的多孔的結構和石墨本身的結構性能特點使得碳作為陰極材料時有利於溶漲復合膜（ scf ）與電極表面的結合以及膜的剝離，因此是作為陰極的理想材料；電化學條件中的乾燥程度和電壓能夠明顯的影響離子在膜內的遷移，從而對mpgcf的形態結構造成較大的影響；而提高反應溫度和增大電解液中銅離子的濃度也有利於銅在膜中的沉積生長。
  19. Decomposition of excitation spectra shows that the charge transfer band of eu3 + at the s6 site lies in the high - energy side of that at the c2 site, resulting in that the energy transfer from the host prefers to the s6 site

    光譜分解得出s _ 6格位的電荷遷移帶位於c _ 2格位電荷遷移帶的高能側， y _ 2o _ 3基質傾向于向s _ 6格位進行能量傳遞。
  20. The study shows that interface state charges not only increase the threshold voltage, but also lower the mosfet transconductance, drain current and field - effect mobility, which can well explain the results of experiment

    分析結果顯示界面態電荷不僅使閾值電壓增大，而且還會導致器件漏電流減小，跨導和場效應遷移率降低，模擬結果能對實驗現象做出很好的解釋。
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