電路工藝 的英文怎麼說

中文拼音 [diànlùgōngyì]
電路工藝 英文
circuit technology
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 工 : Ⅰ名詞1 （工人和工人階級） worker; workman; the working class 2 （工作; 生產勞動） work; labour 3 ...
  • 藝 : Ⅰ名詞1 （技能; 技術） skill 2 （藝術） art 3 [書面語] （準則） norm; standard; criterion4 [書面語...
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Study of the silicon carbide integrate circuits technique

    單片集成電路工藝技術
  2. For the first time, an integrated hall switch based on gaas mesfet process was fabricated

    論文首次採用gaas直接離子注入mesfet集成電路工藝，研製出了gaas霍爾開關集成電路。
  3. Being one of the leading foundry service enterprise, hejian is geared with an excellent management team along with state - of - art ic technology as to provide comprehensive and competitive service to her customer

    公司擁有尖端的集成電路工藝技術和傑出的經營團隊，為客戶提供全面性及具有競爭力的服務。
  4. ( 4 ) by means of integrated circuit ( ic ) process the phase shifter was fabricated

    （ 4 ）移相器製作採用集成電路工藝。
  5. A novel method for reducing the substrate - rated losses of integrated spiral inductors is presented. the method is that directly forming pn junction isolation in the si substrate to block the eddy currents induced by spiral inductors. the substrate pn junction can be realized in standard silicon technologies without additional processing steps

    提出了一種新的方法來減小硅襯底損耗提高集成電感的q值：在硅襯底形成間隔的pn結隔離以阻止渦流減少損耗，這種方法工藝簡單且與常規硅集成電路工藝兼容。
  6. Mems optical switch for optical communication is fabrication by silicon surface micromachining technology. surface micromachining technique, based on the standard cmos processes, in the other hand, offers greater flexibility for realizing free - space optical systems on a single chip

    Mems光開關是採用表面微細機械加工技術製作而成，硅表面微機械加工技術是以cmos集成電路工藝為基礎的，它可以靈活地把光開關集成在一塊矽片上。
  7. Department of computer science, university of science and technology of china, hefei 230027, p. r. china - 1mm

    隨著集成電路工藝的發展，特徵尺寸不斷縮小，相鄰金屬導線間的耦合日益顯著。
  8. Especially in cmos n - well integrated circuits technology, the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited

    特別是在n阱集成電路工藝，體效應使得每一階nmos管的閾值電壓都不斷抬升，以至於電荷泵的最高輸出電壓受到限制。
  9. The direct - nitridation of silicon wafer in nitrogen is very important because it involves in silicon wafer ' s heat treatment, ic technics and pulling monocrystal in nitrogen

    在矽片的熱處理、集成電路工藝和氮氣保護的拉晶過程中，都涉及到硅的氮化問題，因此矽片氮氣直接氮化的研究意義重大。
  10. Lateral high - voltage power device ldmos has advantages of high - voltage, large gain, wide dynamic range, low distortion and compatibility with low - voltage circuit process

    橫向高壓功率器件ldmos有耐高壓、增益大、動態范圍寬、失真低和易於和低壓電路工藝兼容等特點。
  11. It ought to be compatible with low - voltage circuit process and satisfy requirement of high - voltage and large current this paper deeply discusses threshold voltage, on - resistance and current characteristic of ldmos, and builds the approximately accurate model of these electrical parameters

    本文討論的ldmos結構是pdp選址驅動晶元設計的一個關鍵問題，該結構實現了與低壓電路工藝的兼容，並滿足耐壓高、電流大的實際需要。
  12. By studying and using conventional 1c process in combination with electron beam lithography ( ebl ), reactive ion etching ( rie ) and lift - off process, several efficient results are produced : semiconductor and metal nano - structures are fabricated ; the matching problem of photolithography and electron beam lithography is well solved ; the process efficiency is improved ; the process is offered for the controlled fabrication of nano - structures by repetitious process testing ; several nano - structures such as si quantum wires, si quantum dots, double quantum dot structures and tri - wire metal gate are firstly fabricated by using ebl and rie processes

    研究利用常規的硅集成電路工藝技術結合電子束光刻，反應離子刻蝕和剝離等技術制備半導體和金屬納米結構，很好地解決了普通光刻與電子束光刻的匹配問題，提高了加工效率，經過多次的工藝實驗，摸索出一套制備納米結構的工藝方法，首次用電子束光刻，反應離子刻蝕和剝離等技術制備出了多種納米結構（硅量子線、量子點，雙量子點和三叉指狀的金屬柵結構） 。
  13. As the technology advances into deep sub - micron era, crosstalk reduction is of paramount importance for signal integrity. simultaneous shield insertion and net ordering sino has been shown to be effective to reduce both capacitive and inductive couplings

    隨著集成電路工藝發展到深亞微米技術，互連線串擾問題變得相當重要，它與互連線時延問題成為了決定電路性能的主要因素。
  14. With the rapid developments of slsi technology, the system on a chip ( soc ) technology supported by very deep sub - micron ( vdsm ) and ip - reuse has become the developmental trend of international slsi and the ic mainstream in the 21st century

    隨著超大規模集成電路工藝技術的發展，以超深亞微米工藝和ip核復用技術為支撐的系統晶元技術（ soc ）是國際超大規模集成電路發展的趨勢和二十一世紀集成電路技術的主流。
  15. As umbirfpa is a new type of infrared detecting device, its work principle is complex and its performance is affected by many factors. in the initial stage of developing, the design experiment and theoretical understanding are little interiorly. furthermore, the problems such as sensitivity reduced, dynamic range shortened, nonuniformity increased come forth if umbirfpa is not designed properly

    Umbirfpa是一種新型的紅外探測器件，微測輻射熱計的工作原理復雜，其性能受到很多因素的影響，目前國內尚處于發展初期，缺少實際的設計經驗和理論認識，同時umbirfpa又是在集成電路工藝線上生產的，投資大、周期長，如果設計不當，不僅可能導致靈敏< wp = 13 >度降低、動態范圍縮小、噪聲增大、非均勻性增大等問題，更可能的是根本就不能用於成像，從而造成很大損失。
  16. With the development of semiconductor process technology a system on a pcb ( printed circuit board ) which is composed of several ics can be integrated into a chip

    隨著集成電路工藝的飛速發展，人們已經可以將原先的板級系統集成在一塊晶元上，系統晶元逐漸成為集成電路設計的主流發展趨勢。
  17. The implementation of in - chip clock generator is often based on modern cmos ic process technology which is usually adopted by very large scale digital system. while designing a deep sub - micrometer cmos circuit, delay, power consumption and die size are of the main factors that must be considered

    使用現代深亞微米cmos集成電路工藝製造的內部時鐘發生器要綜合考慮延時、功耗、面積等各種重要因素，而且經常要針對soc系統的需求設計特殊的電路結構。
  18. Micromechanical gyroscopes manufactured in ic technology combined with micromachined process has small size, driving and detecting are difficult. nowadays the research of the electronic interface circuit is the key point in the field of micromechanical gyroscopes

    微機械陀螺採用集成電路工藝和微細加工技術製造，尺寸微小，驅動和檢測困難，目前介面電路的研究是微機械陀螺研究的重點和難點。
  19. With the development of very large scale integrated circuit, circuit scale is more and more large, complexity is more and more serious, which has become a huge challenge to electronic design automation

    隨著超大規模集成電路工藝的發展，電路規模越來越大，電路設計的復雜度越來越大，這對于電子設計自動化提出了嚴峻的挑戰。
  20. With the development of very large scale integrated circuit manufacturing process, the circuit scale increases larger and larger, the design complexity becomes more serious, and soc becomes the main trend. one key technique is ip design and reuse

    隨著超大規模集成電路工藝的發展，電路規模越來越大、電路設計的復雜度越來越高，系統晶元（ soc ， systemonachip ）成為微電子技術的發展方向。
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