電躍遷 的英文怎麼說

中文拼音 [diànyuèqiān]
電躍遷 英文
electric transition
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 躍 : 動詞（跳） leap; jump
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  1. Using the multi - configuration dirac - fock method ( mcdf ), we studied the characteristic of the decay processes of the 4d core excited states of csiv, the low - lying excitation structure of super - heavy element bohrium ( z = 107 ) and the x - ray spectra of the 3d - 4f transitions of highly charged xenon ions in details in this work, by including the electron correlation and the relaxation effects systematically

    本論文運用mcdf方法，通過系統考慮電子相關效應和馳豫效應，分別研究了cs離子的4d內殼層激發態衰變動力學特性，超重元素bh （ z = 107 ）的低激發態結構以及高離化態氙離子的3d - 4f躍遷產生的x射線譜的結構等問題。
  2. In the absence of an appreciable magnetic field, the ensemble of nebular electrons interacts with ions to emit weak continuous radiation by free-free and free-bound transitions.

    在不存在可觀的磁場時，星雲中的電子系綜與離子相互作用可通過自由-自由和自由-束縛躍遷而發射弱連續輻射。
  3. Both ionization and excitation lead to electronic transitions that may be the emission of light.

    電離和激發都將導致可能伴隨有光發射的電子躍遷。
  4. E 0, 15mev evaluation of surface contamination. part 3 : isomeric transition and electron capture emitters, low energy beta - emitters e beta max inferior to 0, 15 mev

    表面污染的評估.第3部分:同質異能躍遷和電子俘獲發射器，低能量發射器
  5. In chapter two, the basic principles of rempi technique are introduced including the resonance enhanced effect, the selection rule, the mechanism of photoionization and photodissociation, rempi rate equation and the property of rydberg state

    第二章介紹了rempi技術的基本原理，包括多光子共振躍遷的選擇定則、電子態的光解離機理、描述rempi過程的速率方程和分子rydberg態的性質。
  6. In part two of this paper, many - body perturbation theory has been used to calculate the resonance structure ( 3p - 3d ) into the photoionization ( 4s - kp ) for ion ca +

    在本文的第二部分，運用多體微擾理論，我們計算了ca ~ +離子在4s kp的光電離過程中， 3p 3d躍遷的共振結構。
  7. Afterl95os, due to the development of quantum electronics, a new embranchment appeared, which is laser physics, it ? also called the physics of quantum transitions because of the emanation of electronic technology. the symbol of laser physics is the noble physics prize in 1964. the naissance of laser physics is the landmark in the cognition of naturalness

    20世紀中葉以後由於量子電子學的發展而出現了一個新的分支，以研究激光物理機制，探索新型激光器，已形成了專門的學科，即激光物理，或因激光發源於電子技術而稱為量子躍遷物理學，它是以1964年的諾貝爾物理學獎為標志的。
  8. By using the multi - configuration dirac - fock ( mcdf ) method, the effects of relaxation and correlation on the transition energies and probabilities of electric - dipole allowed ( el ) resonance and intercombination transitions for 2p53s3 - 2p6 in neutral neon have been systematically studied firstly. and the results of the transition energies and probabilities ( lifetimes ) in length and velocity gauge have been presented. during the calculation, in order to consider the rearrangement effects of the bound - state density and some important correlations, the asfs of transition initial - and final - states were divided according to their angular - momentum and parity and calculated, and different number of csfs were included in the expansion of asfs

    本文利用多組態dirac - fork （ mcdf ）理論方法，通過對輻射躍遷初、末態電子波函數的獨立計算以及在原子態波函數的展開中考慮不同數量的組態波函數，系統地研究了弛豫和相關效應對中性ne原子2p ~ 53s ~ （ 1 . 3 ） p _ 1 ~ o - 2p ~ 6 ~ 1s _ 0電偶極共振和復合躍遷的能量以及躍遷幾率的影響，給出了長度和速度兩種不同規范下激發態的能量和輻射壽命；以中性ne原子的研究為基礎，進一步研究了類ne等電子系列離子（ z = 11 - 18 ）較低的激發組態2p ~ 53s和基組態2p ~ 6的能級結構以及各能級間的輻射躍遷特性。
  9. The study indicate that sral2o4 : tb3 + phosphor can be composed from 1250c to 1550c, the phosphor ' s luminance reduce and the afterglow time shorten along with the compounding temperature ; the better luminance and afterglow with the better crystalloid degree ; the luminescence of tb3 + ion in the sral2o4 is coming from the transition of 5d4 - 7fj ( j = 6, 5, . . . 0 ) ; the afterglow is because of the electron that seized in the trap released which integrate with the luminescence center

    合成發光體亮度隨合成溫度的降低而逐漸降低，余輝時間逐漸縮短；當合成物具有較好的結晶度時，合成的發光粉不僅發光亮度高而且余輝時間長； tb ~ （ 3 + ）離子在sral _ 2o _ 4基質晶格中的發光主要來自於~ 5d _ 4 ~ 7f _ j （ j = 6 ， 5 ， … … 0 ）的躍遷；其餘輝是因為不斷有被陷阱所俘獲的電子釋放出來與發光中心復合。
  10. The significant feature of the system model is that the two - dipole moment is in the v configuration. of the two dipole allowed transitions, one is very strong while the other is very weak

    系統模型的特徵是，三能級系統中電偶極躍遷構成v型結構，其中一個躍遷很強，另一個躍遷很弱。
  11. The " allowed " electric dipole ( el ) transitions will encounter strong competition from " forbidden " transitions, i. e. magnetic dipole ( ml ), electric quadruple ( e2 ) and other higher order transitions, the transitions rates for the forbidden decay scale with higher powers of z than those of el transitions, the effects of quantum electrodynamics ( qed ) also scale with higher power of z. accelerator - based beam - foil spectroscopy ( bfs ) is an important method for spectroscopic studies of highly ionized atoms

    在高離化態原子中，磁相互作用明顯增強， 「允許的」電偶極（ e1 ）躍遷將遭到來自磁偶極（ m1 ） 、電四極矩（ e2 ）和其它高次的「禁戒」躍遷的強烈競爭，禁戒躍遷幾率隨核電荷數z增加而迅速增加，此外量子電動力學效應也隨著z增加而增強。
  12. The luminescence theorem of aluminates strontium is studied, too. ce transfers energy to tb in ce and tb co - activated phosphors. light emission of phosphors is led by 4f - 4f - electron leap of tb ; its long lasting persistence is related to electron traps in sraljo, host lattice

    鉚對錨有能量傳遞和敏化作用，該磷光體的光發射是杴的4f 4ffh于躍遷發射的結果：其餘輝特性與鋁酸鋸晶格的電子陷階等有關。
  13. It is found that the existence of a maximum in the snr is the identifying characteristic of the sr phenomenon. " the main - unexpected - - novelty is the dependence of the effect on initial condition. " ( report of the phys. rev. e referee ) the coherence resonance ( cr ) and the stochastic resonance ( sr ) phenomenon in a globally coupled fitzhugh - nagumo neurons model are studied

    Ohyreve審稿人語）在對fhn神經模型的共振現象研究中，我們考慮一個存在耦合的多個神經細胞相互作用的神經網路，利用平均場理論和概率躍遷理論，得到了神經系統在無信號和有周期性信號的兩種倩況下的靜息電位。
  14. The transition from voltage to no voltage is referred to as the trailing edge of a clock signal.

    電感從一定值下降到0值的躍遷叫做時鐘信號的后沿。
  15. This work was supported by the state science and technology ministry of p. r. china under the contact no. g20000683 - 06, and by the national natural science foundation of p. r. china under grant no. 60046001. gallium nitride is one of the 3rd generation semiconductor materials. from 1990 ' s, gan has attracted more and more attention and advanced rapidly, mainly due to its direct transition, wide band gap ( ~ 3. 4ev ) and other excellent characters

    Gan是直接躍遷的寬帶隙材料，具有禁帶寬度大（ 3 . 4ev ，遠大於si的1 . 12ev ，也大於sic的3 . 0ev ） ，電子漂移飽和速度高，介電常數小，導熱性能好等特點，在光電子器件和電子器件領域有著廣泛的應用前景。
  16. Excited with 228nm, the emission bands centered at about 365nm and 460nm originate from the electron transitions of 1d2 - 1s0 and 3d - 1s0 in ag + respectively, and the emission band at 400nm results from the surface plasma resonance of the silver nanoparticles, which aggregated near the surface of the films

    在228nm光激發下，復合膜中ag ~ +的電子的~ 1d _ 2 ~ 1s _ 0躍遷和~ 3d ~ 1s _ 0躍遷分別在365和460nm附近發光，聚集在復合膜表面的納米銀粒子的表面等離激元共振導致了400nm附近的發光。
  17. The energy level structures of the 4d core excited configuration 4d 5s25p5, final radiative configuration 4d105s25p4 and final auger configurations 4d105s25p3 and 4d105s15p4 of csv ion and all possible decay dynamics processes related to these configurations are all determined by mcdf method. we also compared the present results of radiative transition, oscillator strength and the line width with the results obtained by experimental spectra and the quasi - relativistic configuration interaction method and got a good agreement. we also make prediction for some dominant features of the auger electron spectrum emitted by the auger decay process of the 4d95s25p6 core excited states

    論文第三章中詳細的介紹了cs離子的4d內殼層電子激發組態4d ~ 95s ~ 25p ~ 5 、輻射末態4d ~ （ 10 ） 5s ~ 25p ~ 4及auger末態4d ~ （ 10 ） 5s ~ 25p ~ 3和4d ~ （ 10 ） 5s5p ~ 4的能級結構及各種可能的輻射和auger衰變過程，獲得了與已有的實驗結果和相關的半經驗準相對論組態相互作用計算結果相符的輻射躍遷能、振子強度以及線寬，預言了4d ~ 95s ~ 25p ~ 5態的以auger衰變為主的auger電子譜的特性。
  18. Gan has d1rect, wide bandgap und is one of the ii1ost promising lnateria1. 1t ' s good e1ectrica1, opt ica1 characteristi cs and excel1ent lllecllaniczl1 properties make it one of the most ideal choices for short wave photoe1ectron devices, such as u1 travio1et photodetectors

    Gan是最有前景的直接躍遷寬帶隙半導體材料之一，它具有優良的光電性質和優異的機械性能，被認為是制備短波長光電子器件的最佳材料之一。
  19. It is reported that an increase in the zr content induces a reduction in the average grain size, decreases the dielectric constant, and maintains a leakage current low and stable. this is possible because the zr4 + ion has lager ionic size than ti4 +

    Zr4 +離子取代ti4 +離子之後將會抑制ti4 +離子與ti3 +離子的電子躍遷，從而減小了薄膜的漏電流，同時還有助於減小平均晶界體積，降低介電常數。
  20. This makes the system of orbitals unstable and an electron from an orbital further out rapidly fills the hole

    這使得軌道系統不穩定，外一層軌道的電子會迅速躍遷到內層空軌道上，填補空穴。
分享友人
分享到 Line

分享到臉書