電遷移率 的英文怎麼說

中文拼音 [diànqiānyílǜ]
電遷移率 英文
electromobility
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. The results showed that inclpc nanoparticles were ball - shaped with a size of 25 - 50 run, that their diffraction peaks become broader, and that the blue - shift in uv / vis absorption was also observed. the photoconductivity of inclpc nanoparticles in single - layered p

    本章的研究旨在對有機電子傳輸材料進行初步的探索，為今後新型的高遷移率有機電子傳輸材料的合成和表徵，以及應用等方面積累經驗。
  2. There were some degration in the purified protein, but gst - ap - 2 a still had the dna binding activity in the gel shift assay. the gst - testin and gst - antn1 were used for immunolize rabbits

    雖然所提取的融合蛋白gst - ap - 2出現較多降解，但是電泳遷移率變動分析顯示其仍然具有良好的dna結合活性。
  3. Here the conductance, carrier concentration and hall mobility ect parameters of er doped cdte films have been given. using seto model, we calculate the grain - boundary barrier of er doped cdte films and analyze the varing dose influence on the grain - boundary resistance

    討論了不同er離子注入量對硅基底上沉積的cdte薄膜結構和光電性能的影響，並具體給出了摻雜cdte多晶薄膜的電導、載流子濃度及遷移率等參數值。
  4. The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed

    與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。
  5. Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices

    Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。
  6. A model of the interface state density distribution near by valence band is presented, and the dependence of the threshold voltage on temperature, the c - v characteristics and the subthreshold characteristics are predicted exactly with this model ; the effects of s / d series resistance on the output characteristics, transfer characteristics and effective mobility of sic pmosfets are analyzed. thirdly, the output characteristics and the drain breakdown characteristics are modeled with the procedure medici. the output characteristics in the room temperature and 300 ? are simulated, and the effects of gate voltage. contact resistance, interface state and other factors on sic pmos drain breakdown characteristics are analyzed

    提出了一個價帶附近的界面態分佈模型，用該模型較好地描述了sicpmos器件閾值電壓隨溫度的變化關系、 c - v特性曲線以及亞閾特性曲線；分析了源漏寄生電阻對sicpmos器件輸出特性、轉移特性以及有效遷移率的影響；論文中用模擬軟體medici模擬了sicpmos器件的輸出特性和漏擊穿特性，分別模擬了室溫下和300時sicpmos器件的輸出特性，分析了柵電壓、接觸電阻、界面態以及其他因素對sicpmos擊穿特性的影響。
  7. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  8. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  9. Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image

    相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。
  10. It was found that, the as grown crystal of mnxcd1 - xin2te4 is p type semiconductor, both the charge density and the resistivity increase with x value, while the carrier mobility decreases with x

    晶體的電學性能，發現生長態的mncd晶體均為p型半導體。隨著組分x值的增大，載流於的濃度np減小，遷移率p 。
  11. In this article, we microinjected camp ( as activator of pka ) and protein kinase inhibitor ( pki ) ( as inhibitor of pka ) into mouse 1 - cell stage fertilized eggs, the camp concentration, pka and mpf activaty were detected, also the cdc25c, cdc2 phosphorylated state and the concentration of ptyr15 for cdc2, cyclin b1. materials females of 4 - 5 week - old kuming mice and males of 8 week - old kuming mice were supplied from the department of laboratory animals, china medical university

    本實驗應用pka激動劑camp及抑制劑pki顯微注射入小鼠二一細胞期受精卵並觀察卵細胞m期形態學變化及pka對mpf活性的影響以及cdc25c ， cdcz電泳遷移率， cdcz的磷酸酪氨酸ptyrl及周期素b含量，為揭示pka在哺乳動物細胞周期調控機制，對生長、發育、癌變、死亡的研究提供理論依據。
  12. The filled skutterudite compounds attract aboard attention owing to their high mobilities and relatively large seebeck coefficients in the middle temperature range of 600 - 800k. but their thermal conductivities are very high, so the problem how to decrease their lattice thermal conductivities and improve their zt values becomes a research hotspot

    填充式skutterudite化合物由於在中溫領域（ 600 800k ）具有很高的載流子遷移率和較大的seebeck系數而引起人們的廣泛關注；但其熱導率k較高，因而如何降低晶格熱導率kl ，提高其熱電性能指數zt值已成為研究的熱點。
  13. The enhanced photoconductive effect from small amount of tnf facilitates the preparations of new organic photoconductive devices under the drive of low fields. in the fourth chapter, inclpc nanoparticles embedded in poly ( n - vinylcarbzaole ) ( pvk ) were prepared successfully by dissolving inclpc in aprotic organic solvent / lewis acid with great concentration for the formation of electron donor - acceptor complexes, i. e., the method of complexation - mediated solubilization. the fabricated inclpc nanoparticles were characterized by means of uv / vis absorption, x - ray diffraction pattern, and tem

    論文的最後一章中，我們合成了具有較好的電子傳輸性能的化合物』一二苯基四竣酸花酚亞胺（ ddp ） ；研究了其溶解性、熱穩定性、晶體結構、紅外光譜、紫外吸收光譜和蒸鍍薄膜的屬性，並用量子化學計算方法模擬其單分子的空間構型；載流子遷移率測試的結果約為ix10 「 、 m 』 v 」 』 ? s 「 』 。
  14. As the only one among nearly 200 polytypes of different crystalline sic, which has a cubic crystalline structure, p - sic is an excellent candidate for fabrication of high power devices because of its high values of saturated electron drift velocity and electron mobility in comparison with the other sic polytypes

    碳化硅是碳化硅近200種不同結晶形態中唯一的純立方結構晶體，載流子遷移率高，電子飽和漂移速度大，更適合於製造電子器件特別是電力電子器件之用。
  15. Measured results showed that the dl - a device with its structure as following ito / npb / alq / mg : ag was far more superior to sl device with the structure of ito / alq / mg : ag because the dl - a device better balanced energy band between each each layer and the mobility of carriers ( electrons and holes ), which led to the combination of carriers taking place in the bulk of emitter and avoided the excitons being eliminated by the electrodes which easily occurs in sl devices. as to the doped devices, measurements demonstrated an excellent device with its maximum brightness was 25000cd / m2

    研究結果表明， dl - a型雙層結構器件ito / npb / alq / mg : ag的各項性能指標明顯優于單層器件ito / alq / mg : ag ，因為前者有更好的載流子遷移率匹配以及能帶匹配，因此平衡了復合的載流子數目，並且能將復合區有效控制在發光層內部，有效避免了表面的大量缺陷以及電極猝滅效應，提高了載流子的復合效率，從而提高了器件的發光性能。
  16. Test method for characterization of proteins by electrophoretic mobility

    電泳遷移率法測定蛋白質特性的測試方法
  17. 6. emsa with coincubation of specific antibodies to the p50 or p65 subunits of nf - b showed a distinct retardation in the mobility with the p65 antibody and a reduction in the intensity of the shifted band with the p50 antibody

    6 ，加入抗nf一kbp65和p50的抗體進行電泳遷移率改變實驗，證實nf一kb形成p50 / 65異二聚體參與mbd3基因的轉錄調節。
  18. In order to study the expression of 3 - defensins in liver as acute phase response proteins, a murine systemic acute phase responsive model was established by intraperitoneal injection o f lipopolysaccharide ( lps ) in our study. the mbd3 cdna sequence ( 145 - 169 bp ) was labled with [ - 32p ] atp as a probe to detect mbd3 mrna in different tissues by northern blot and analyze the time - and dose - dependant expression caused by lps. the 5 " flanking sequence ( - 167 - 179 bp ) of the mbd3 gene was designed as the probe and labled with [ - 32p ] dctp to investigate the binding of transcriptional factors to this region by electrophoretic mobility shift assay ( emsa ) and south - western blot

    以小鼠mbd3基因145 ? 169bpcdna序列合成探針，經[ - ~ （ 32 ） p ] atp標記后通過northernblot方法檢測mbd3在肝臟中的表達，同時分析了mbd3基因誘導表達的組織特異性，劑效和時效關系；結合mbd3基因啟動子區序列分析，以- 164 ? - 179bp雙鏈dna序列合成探針，經[ - ~ （ 32 ） p ] dctp標記后通過電泳遷移率改變實驗（ emsa ）和south ? westernblot方法對參與mbd3在肝臟中誘導表達調節的轉錄因子進行分析。
  19. The results of emsa showed the obvious retardant bands, which suggest that some proteins in nuclei can bind to the specific dna sequence of mbd3 gene after lps treatment. 5. the molecular mass of this dna binding protein was assessed between 43. 0 - 66. 2 kd by south - western blot

    4 .電泳遷移率改變實驗有明顯的滯后帶形成，表明lps刺激后，肝臟組織的細胞核內有轉錄因子與mbd3基因特異的dna序列結合，參與mbd3基因的誘導表達5 . south一westemblot進一步確定此轉錄因子分子量在43 . 0一「 . 2kd之間。
  20. Mobility of ions

    離子的電遷移率
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