非本徵性導電 的英文怎麼說

中文拼音 [fēiběnzhǐxìngdǎodiàn]
非本徵性導電 英文
extrinsic conduction
  • 非 : Ⅰ名詞1 （錯誤） mistake; wrong; errors 2 （指非洲） short for africa 3 （姓氏） a surname Ⅱ動詞1 ...
  • 本 : i 名詞1 （草木的莖或根）stem or root of plants 2 （事物的根源）foundation; origin; basis 3 （本錢...
  • 徵 : 名詞[音樂] （古代五音之一 相當于簡譜的「5」） a note of the ancient chinese five tone scale corre...
  • 性 : Ⅰ名詞1 （性格） nature; character; disposition 2 （性能; 性質） property; quality 3 （性別） sex ...
  • 導 : 動詞1. （引導） lead; guide 2. （傳導） transmit; conduct 3. （開導） instruct; teach; give guidance to
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  1. In this paper, they are set forth at first that the kinds of computer - simulation of electronic devices, the development and the requirements of mosfet ' s model and the way of gain the models " parameters, the dc models have been bui it in chapter 2 and the models of big signals have been deduced in chapter 3, they are different from the equivalent circuit models in the traditional software pspice that they come from the numer i ca i - s i mu i at i on wh i ch is based on the essence equat i on, so the precision of simulation is enhanced ? mosfet ' s small signal models of low frequency, intermediate frequency and high frequency have been built in chapter 4 and chapter 5, although the equivalent circuit models in pspice are used for reference to bui id them, they have their own characteristics which are analyzed at a i i kinds of situations, so that the simulation software for mosfet can be written according them and it i s a i so benef i c i a i for us to catch the gen i us character i st i cs of mosfet and to d esign all kinds of applicable devices the correctness of the models is simply proved in chapter 6

    本文首先介紹了電子器件計算機模擬的分類、 mosfet的建模發展動態、對器件模型的要求以及模型參數的提取方法。在第二章中建立了mos晶體管在直流端電壓條件下的工作模型；第三章推導了mosfet的大信號模型，這兩類模型不同於傳統模擬軟體例如pspice中的等效電路模型，而是從模型方程出發，採用數值模擬的方法，提高了模擬的精度。第四章和第五章分別建立了mos晶體管低頻、中頻、高頻的小信號模型，雖然借鑒了pspice模擬軟體中用等效電路模型的方法，但是本文分別討論了準靜態和非準靜態時器件的本徵部分以及包含非本徵部分工作于低頻、中頻和高頻條件時的模型，可以根據這些模型編寫相應的模擬軟體，這樣在做器件的模擬分析與器件設計的時候，就可以利用模擬軟體逐步深入地分析器件在不同的條件下和器件的不同部分在工作時的各種小信號特性，有利於抓住器件工作的本質特性，設計出符合要求的各類通用和特殊器件。
  2. The results suggested that the macroscopic nonlinear conduction might originate from a combination of microscopic conduction processes, which involves the electronic transporting across the intrinsic nonlinear microscopic components and tunneling or hoping across thin polymer bridges present on the conducting network

    因此認為，尼龍6納米石墨復合體系的宏觀非線性電導為微觀電導過程的綜合結果。其中包括本徵非線性組合元件的電導貢獻以及發生在導電網路中的聚合物橋鏈上的隧道和躍遷效應。
  3. In this context, the nlo properties of three kinds of essa ultrathin films are investigated systematically in terms of experiment and theory. the main contents are list in the following : based on the traditional z - scan theory and the huygens - fresnel ( h - f ) diffraction integral principle, we present a double - sided film z - scan theory that is suitable to characterize the nlo properties of the double - sided nonlinear mediums

    本論文從實驗和理論上系統地研究了三類靜電自組裝超薄膜的光學非線性，主要研究內容如下:在已有的z - scan理論基礎之上，基於惠更斯-菲涅耳衍射積分原理推導出了適合於表徵雙面非線性介質光學非線性的雙面膜z - scan理論。
  4. The natures of the probe and formation mechanisms in these techniques are different ; therefore, the images of spm can reflect different properties of sample surface. in this work, related properties of ferroelectric thin film were investigated as followed : the main factors determining the image formation of piezoresponse force microscopy ( pfm ) and scanning nonlinear dielectric microscopy ( sndm ) were studied. to avoid the misreading of the same conductive tip with different state, a new method of polarization distribution mapping with nonconductive tip was proposed, and the result of experiment demonstrated that the polarization distribution of ferroelectric thin films could be characterized well by the new approach

    本工作主要分為以下幾個部分:從研究鐵電薄膜的壓電響應力顯微鏡（ pfm ）和掃描非線性介電顯微鏡（ sndm ）成像的影響因素入手，討論了針尖對成像質量的影響;為降低實驗成本、減小導電探針針尖狀態變化對鐵電薄膜微區電性能測試的負面影響，提出了以非導電探針檢測微區極性分佈的方法，並在現有spa - 300hv型spm的實驗平臺上以pfm模式成功實現了新方法對鐵電薄膜極性分佈的表徵。
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