面雙晶 的英文怎麼說
中文拼音 [miànshuāngjīng]
面雙晶
英文
plane twin-
Blue romantic barrette swarovski austrian crystal
藍色浪漫雙面發夾奧地利水晶Elegant bowknot barrette swarovski austrian crystal
閃亮蝴蝶結雙面發夾奧地利水晶In the section 3, we calculated the threshold and efficiency of double resonance oscillator ( dro ) in plane wave of clbo ; we also got the efficiency curves of clbo in gaussian beam
第三章分析和數值模擬計算了平面波雙諧振情況下clbo晶體的振蕩閾值和轉換效率曲線，同時給出了高斯光束的轉換效率曲線並與bbo晶體進行了比較。Hetero - junction bipolar transistor hbt
異質接面雙載子晶體管Bipolar junction transistor
雙極面結型晶體管His solemn eyes were too bright. and down one cheek was a track of wetness.
他那嚴肅的雙眼異常晶亮，一邊面頰上還有潤濕的痕跡。This thesis was divided into eight chapters, and the main results and innovations obtained here can be summarized as follows : ( 1 ) the physics model of tsrs in frequency conversion crystals has been built up firstly. based on quantum - mechanical viewpoints and the following physical processes and parameters : the two - photo interaction of light with matter, paraxial diffraction of stokes, langevin noise sources, reflection at the faces and the edges of crystals, gain coefficient, beam aperture, pulse width and fluence of 3, the physics model of tsrs in kdp and kdp crystals acting as high - fluence frequency convector and the paraxial operator maxwell - bloch - langevin equations have been built up
全文共分八章，取得的主要成果及創新點如下： （ 1 ）首次建立了諧波轉換晶體的tsrs物理模型本文根據量子力學原理，在考慮如下物理過程和參量的基礎上：光與物質的雙光子相互作用； stokes光的傍軸衍射； langevin （郎茲萬）噪聲源；晶體表面反射和端面反射；增益系數、光束口徑、脈寬和三倍頻光能量密度，推導出高通量激光在kdp和kd ~ * p諧波轉換晶體中的tsrs物理模型和空間上的近軸算符maxwell - bloch - langevin方程組。A arming control system of synchronous fitting missle is brough forward in this paper of which the arming control unit composes of the high speed digital signal processing chip dsp and fpga, and has better performance in speed and precision
本文提出了一種雙聯裝導彈瞄準系統，其瞄準控制部分由高速數字信號處理晶元dsp和現場可編程門陣列fpoa構成，使得整個系統在速度和精度方面都具有較好的性能。In the paper we mainly researched space gainp2 / gaas / ge high efficiency tandem cells " making process by home - made low pressure mocvd technology and new solar concentrators. firstly, we presented reseached and development of solar cells in china and foreign countries ; secondly, on the basis of fundamental priciples and theories, we discussed some factors of influcing conversion efficiency of solar cells, and analysed the i - v output feature of two - junction tandem cells ; then the design concept of gainp2 / gaas / ge two - junction tandem cells was discussed, the detailed aspects of gainp2 / gaas / ge tandem cells epitaxy growth by low pressure mocvd was studied, and some questions on epitaxy growth ( such as crystal qualities, interface stress, element interdiffusion, n - and p - type doping et all ) were solved ; after that, the cell fabrication process was described ; finally, we reseached the hot pressing and mould process technology of an arched line - focus fresnel lens made by pmma, designed and fixed new solar concentrators
本文致力於用自製的低壓mocvd裝置進行cainp _ 2 / gaas / ge空間用高效級聯太陽能電池製作的工藝以及聚光太陽能電池組件的研究。首先，介紹了國內外太陽能電池的研究現狀及應用情況；其次，運用太陽能電池基本原理討論影響電池轉換效率的因素，分析了級聯電池的伏安特性；隨后，討論了cainp _ 2 / gaas / ge雙結級聯電池的結構設計理念，研究了採用低壓mocvd技術生長cainp _ 2 / gaas / ge級聯太陽電池材料的工藝過程，解決了異質材料生長的結晶質量、界面應力、材料互擴散以及材料n 、 p型摻雜等一系列問題；然後總結了級聯電池的后工藝製作；最後，研究了以pmma為材料的菲涅耳線聚焦透鏡的熱壓成型工藝及其模具的加工工藝，設計並安裝完成新型聚光太陽能電池組件。In order to make the sensitivity of 2 - demension accelerometer along the two main arbors almost identical, symmetric four - beam structure that embeds a double - sides interdigitated differential capacitive with puckered beam in two directions was used as sensitive component. in addition, the differential capacitive accelerometer fabricated by bulky silicon micromechanical technique has high sensitivity, wide measurement scope, less nonlinear error, and simple converting circuit. then, the structure parameters of the sensitive component were calculated and stimulated, which results in a set of the optimized structure design parameters, main fabrication procedure and several key fabrication technology
為使二維振動傳感器在兩主軸方向的靈敏度大致相同，敏感元件採用高度對稱的四梁結構，其中每個軸向上均採用帶折疊梁的雙側叉指電容結構，採用體硅微機械工藝製作的高深寬比叉指電容式敏感元件，具有高靈敏度、寬量程、非線性誤差小、外圍電路簡單等優點;對設計的敏感元件結構參數進行了計算，並利用有限元法進行了模擬分析，根據模擬結果得出了優化參數;在確定敏感結構的基礎上，研究了敏感元件採用體硅微機械加工工藝製作的工藝流程和關鍵工藝技術;對敏感晶元內部的c - v介面電路進行了原理設計與分析，利用差動測量技術得到由振動引起的微小電容變化量，經c - v介面電路進行相位調制處理，然後通過解調輸出與加速度成正比的電壓信號。Simulation result shows that nearly 100 % breakdown voltage of the plane junction can be realized
模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100 %達到平行平面結的理想值。Abstract : a vertical sandwich deep trench with a field limiting ring is proposed to improve the breakdown voltage of power devices and high voltage devices. simulation result shows that nearly 100 breakdown voltage of the plane junction can be realized
文摘:提出一種二氧化硅/多晶硅/二氧化硅夾心深槽場限制環新結構來提高晶體管的擊穿電壓.模擬結果顯示，該結構可以使射頻功率雙極性晶體管的擊穿電壓幾乎100達到平行平面結的理想值Today, liquid crystal, a new functional material, has been applied more and more widely. on the side of display, owing to stable frarne, absolute environmental protecting, save electric energy and no tire for user, liquid crystal display keeps ahead among the range of display. with the developing of the technology of liquid crystsl, lcd will must substitute for crt and become the chief in market. in additin, liquid crystsl light filers which have been used in optic communicatins and light information handling, emply th e technical of combining the birefringence of liquid crystsl and fabry - petrot - type cavity. they manifest a series of merit, such as narrow band wide, deterioration low, wide tuning domain, simple structure and low cost, so liquid crystal light filter draw attention of many country
現在，液晶作為一種新型功能材料越來越得到廣泛的應用，在電子顯示裝置中，液晶顯示器以其畫面平穩、真正安全環保、省電和使用者不易疲勞等優點領先於顯示器的行列中。隨著液晶技術的發展，液晶顯示器將取代crt顯示器逐步成為未來市場的主流。此外，應用於光通信和光信息處理中的電調諧液晶濾光片，採用液晶材料的雙折射和電光效應與傳統f - p腔相結合，表現出窄帶寬、低損耗、調諧范圍寬、驅動電壓低、結構簡單、低成本等一系列優點，而日益受到各國研究部門的關注。The tail gas absorption solution is returned to the crystallizer, thereby adjusting the liquid - solid ratio, and improving the phosphogypsum crystals with the entrained ammonium ions, with the result that the available components are recovered, and clean production and economic benefit are realized
同時，尾氣吸收液返回結晶槽一方面可以調節液固比，另一方面帶入的銨根離子可以改善磷石膏的結晶，既回收了有效成分，又實現了清潔生產與經濟效益雙豐收。Fluorite is found in various parts of the world, especially in england, germany, mexico, and in kentucky and illinois in the united states
瑩石晶體常呈立方體八面體或立方體的穿插雙晶，集合體呈粒狀或塊狀。With optimized buffer layer growth parameters, gan epilayer with improved quality has been grown, whose fwhm of ( 0002 ) plane dc - xrd rocking curve is 6 arcmin
以優化的緩沖層生長條件得到質量有明顯改善的gan外延層， gan薄膜的（ 0002 ）面雙晶dc - xrd掃描的半高寬為6arcmin 。Heterojunction bipolar transistor, hbt
異質接面雙載子晶體管Not only the top surfaces of emitter, base and collector but also the sidewalls of emitter and base are completely passivated by the proposed full sulfur treatment
最後，在本文中，將提供一個全面性表面硫化披覆方式之異質接面雙極性電晶體。In addtion, the growth rate of low temperature insb buffer layer was 0. 26 m / h, which was obtained by rheed intensity oscillation curves. growth temperature of insb epilayers were investigated with sem and dcxrd, and it was found that the optimum temperature was 440. a 2. 1 m insb layer grown at 440 had an x - ray rocking curve of 412 arcsec, the strain relaxtion was about 99. 02 %
通過掃描電鏡形貌觀察與能譜分析發現:溫度較低時sb的表面遷移率低，容易在表面堆積;結合x射線雙晶衍射分析，確定高溫insb外延生長的最佳襯底溫度為440 ，該溫度下生長2 . 1 m的樣品x射線半高峰寬為412 ，應變弛豫99 . 02 % 。Molecular beam epitaxy ( mbe ) has been used to grow insb heteroepilayer on gaas ( 001 ) substrate with optimized low temperature buffer layer. the surface morphology and crystal quality of insb epilayers have been investigated by means of atomic force microscope ( afm ), scanning electron microscopy ( sem ) and double crystals x - ray diffraction ( dcxrd )
本文採用分子束外延（ mbe ）方法在gaas （ 001 ）襯底上優化低溫緩沖層生長條件制備了異質外延insb薄膜，採用原子力顯微鏡（ afm ） 、掃描電鏡（ sem ）與x射線雙晶衍射（ dcxrd ）等方法研究了insb / gaas薄膜的表面形貌與結晶質量。分享友人