靶材 的英文怎麼說

中文拼音 [bǎcái]
靶材 英文
target
  • 靶 : 1. （射擊的目標） target 2. （轡革; 韁繩） bridle; halter; reins
  • 材 : 名詞1 （木料） timber 2 （泛指可以直接製成成品的東西; 材料） material 3 （供寫作或參考的資料） ma...
  1. : mainly used in ito target, alloy and photoelectricity components

    ：主要用於製作ito靶材、合金及光電元器件等。
  2. By hot pressing, the licoo _ 2 target was produced. different moulds were used in the hot pressing including the graphite mould and the sic mould

    在熱壓法制備licoo _ 2靶材的過程中，使用了石墨模具，碳化硅模具。
  3. Target material was hexagonal boron nitride ( hbn ) and working gas was pure argon

    用射頻濺射法在si襯底上制備立方氮化硼，靶材為hbn ， 。工作氣體為氬氣。
  4. Boron nitride ( bn ) thin films were deposited on si substrates using the conventional radio - frequency ( rf ) sputtering system, with hexagonal boron nitride ( hbn ) target and working gas of argon ( or mixture of nitrogen and argon )

    使用射頻濺射（ rf ）系統，靶材為燒結的六角氮化硼（ hbn ） ，工作氣體為氬氣（或氬氣和氮氣的混合氣） ，在硅襯底上沉積氮化硼薄膜。
  5. 1 successively depositing cbn thin films on si substrates which reaches international advanced level, the impact of negative substrate bias voltage and rf powers on the formation of cbn thin films were studied. boron nitride ( bn ) films were deposited on ( 100 ) - oriented p - type silicon substrate ( 8i sqcm ) with rf sputtering system. the target was hexagonal boron nitride ( hbn ) of 4n purity, and the working gas was the mixture of nitrogen and argon

    研究了襯底負偏壓和射頻功率對制備立方氮化硼薄膜的影響立方氮化硼薄膜沉積在p型si （ 100 ） （ 8 15 cm ）襯底上，靶材為h - bn靶（純度達99 . 99 ） ，濺射氣體為氬氣和氮氣混合而成，制樣過程中，襯底加直流負偏壓。
  6. In this dissertation, a special shape cylindrical target of ybco is designed and sintered for the inverted cylindrical dc sputtering ( icds ) device. then, the thickness distribution of the 3 inch size thin films has been simulated

    本文針對3英寸ybco高溫超導雙面薄膜的制備技術，研究了靶材燒制、薄膜膜厚分佈、加熱器設計與製作，制備出了具有87k超導性的3英寸ybco雙面薄膜樣品。
  7. In this thesis, all the targets were made by ourselves. the materials of carbon target and several kinds of compound electrical idiocratic film were made mainly by straw pole which is of significance in environment protected and resource used repeatedly

    本文特別指出，所用靶材料均是自製的，碳基復合靶材和制備的復合電特性膜材料主要取自於秸稈廢棄物，因此具有環保意義和資源再生的意義。
  8. In the hipib film deposition, high purity graphite was employed as target. relations between process parameters and the microstructure, as well as different physical properties of diamond - like carbon ( dlc ) film deposited by hipib ablated plasma were studied by adjusting the distance between target and substrate, which affects the intensity and ion energy of hipib ablated plasma, and the temperature of substrate in the film deposition processes. the mechanism of film deposition by hipib ablated plasma was explored also

    在薄膜沉積方面，利用高純石墨作靶材，調整薄膜沉積過程中的靶基距（燒蝕等離子體密度、離子能量）和基片溫度，研究實驗工藝對hipib燒蝕等離子體方法制備的dlc薄膜的微觀結構和宏觀物理性能的影響，探討了hipib燒蝕等離子體沉積dlc薄膜的成膜機理。
  9. In the experiment of one - mension material growth induced by metal, nanoparticles are obtained by laser ablation fe target

    在金屬誘導一維sic生長的實驗中，我們採用激光濺射鐵靶材來獲得納米鐵顆粒。
  10. In this paper, several thin films samples of vanadium oxide were got by high - frequency magnetron sputter with pure metal vanadium as sputter source

    本文以高純金屬釩作為靶材，採用磁控濺射工藝制備氧化釩薄膜。
  11. In this paper, the time - resolved spectrum measurement instrument has been improved and optimized based on what we have done, the real experiments for measuring time - resolved spectrum of xe flash - lamp and time - resolved spectrum of matter under pulse laser shocking were made

    本文在本科研組已有工作基礎上改進和優化了時間分辨譜測量方法和裝置，對xe閃光燈脈沖時間分辨光譜進行了成功的實測，對脈沖激光沖擊靶材的輻射譜進行了時間分辨測量。
  12. Magnetron sputtering is common method for preparating metal film resistor. by this method, the target is very important for the performance of the resistor

    在金屬膜電阻器的生產過程中，靶材是非常關鍵的，它制約著金屬膜電阻器的精度、可靠性、電阻溫度系數等性能。
  13. For the common purpose of improving the stability of metal film resistor, this paper includes two parts. the preparation of the target has been studied in the first part, the proportion of the material of the target has been studied and the optimal proportion has been confirmed

    針對提高金屬膜電阻器的穩定性這一共同的目的，本文分為兩個部分，第一部分是金屬膜電阻器高阻靶材的研製；第二部分是金屬膜電阻器專用塗料基體的研究。
  14. There are better performances in the films prepared by ba2ca2cu3ox target than by ba2cacu2ox target. the single - phase tl2ba2cacu2o8 hts thin film was obtained with a tc0 of 107k at the optimal tl2o partial pressure and thallination temperature 750. on excursion from the optimal conditions, there exist some impurities in the resultant films resulting in a reduction in tc0 and surface quality with change in the microstructure morphology

    研究結果表明，採用成分為ba2ca2cu3ox的靶材制備的薄膜性能要優于成分為ba2cacu2ox的靶材；使用組成式為tl1 . 9ba2ca2cu3oy的鉈片做鉈源時，形成的tl2o分壓達到最佳值；在最佳tl2o分壓和最佳鉈化溫度750的條件下，制備出了純相完全c軸取向的tl2ba2cacu2o8高溫超導薄膜，其tc0高達107k ，膜面均勻平整光滑，呈圓片狀組織；偏離最佳制備工藝參數的條件下，制得的薄膜中都含有一定量的雜相，雜相的生成使得tc0值下降，薄膜表面質量下降，薄膜組織形貌發生變化。
  15. Aluminum alloy films and sputtering targets for semiconductor integrated circuit wiring and electrodes

    集成電路電極布線用鋁合金薄膜及其濺射靶材
  16. Manufactures and fabricates high quality cadmium telluride, cadmium zinc telluride and related single crystal substrates

    -主要從事光電晶體系列材料濺射靶材的制備和光學元器件研發與生產。
  17. Uniform and compact plzt and sno _ 2 ceramic targets, which diameter were 212mm and 221mm, respectively, had been successfully fabricated. ( 2 ) a rotating magnetic field rf magnetron sputtering system had been designed and set up, which showed high utilization efficiency of target, high films uniformity, and high deposition rate, etc. ( 3 ) the plzt and sno _ 2 thin films were investigated by afm, xrd, sem, and spectral photometer. the optimized processing parameters of preparing these films had been found

    並以此為基礎分別制備了緻密、均勻、平整、直徑為212mm的plzt和221mm的sno _ 2陶瓷濺射靶材; （ 2 ）為克服現有磁控濺射設備的不足，提出了一種新的磁控濺射方案，採用該方案的設備具有:靶材利用率高、鍍膜均勻、成膜速度快等特點; （ 3 ）運用afm 、 xrd 、 sem以及雙光路分光光度計等分析手段對plzt和sno _ 2薄膜的微結構和性能進行研究，找到了制備plzt電光薄膜和sno2透明電極材料的最佳工藝條件。
  18. In this article, by rf sputtering the licoo _ 2 film was produced. by hot pressing and cold pressing ( and sintering ), the licoo _ 2 targets used in the rf sputtering were produced differently. both technics of the preparation of the licoo _ 2 film and the licoo _ 2 target were studied

    本文使用熱壓燒結方法和冷壓后燒結方法制備了磁控濺射用的licoo _ 2靶材，並使用磁控濺射方法制備了licoo _ 2薄膜，對兩者的制備工藝進行了研究。
  19. While adding 1 % binder the preferable target was produced, and the density was 4. 89g. cm - 3, which was 88 % of the theoretic density of the licoo _ 2 with ar as the sputtering gas, the technics of rf sputtering to produce the licoo _ 2 film were studied systematically

    在冷壓燒結方法制備licoo _ 2靶材的過程中，燒結前添加了不同量粘結劑，就綜合純度和粘結性能兩方面考慮，加入1 %的粘結劑較為理想。所制備的licoo _ 2靶材密度為4 . 89g / cm3 ，達到licoo _ 2理論密度的88 % 。
  20. In this paper, such three points are studied as : a ) the angular distributions of the hot electrons emission under laser irradiation at different incidence angles and at different polarization direction, the angular distribution of the hot electrons in the different energy range, and the effects of laser prepulse on the angular distributions of the hot electrons emission ; b ) the energy distribution of the hot electrons at different directions, from the metallic targets and the dielectric targets, in the different energy range of the hot electrons, and the effects of the atomic number z on the energy distribution of hot electron generated by the metallic targets ; and c ) the energetic proton emission resulting from the interaction of the us - ui laser pulse with plasma

    本論文進行了三個方面的研究：第一，超熱電子角分佈的研究，包括不同激光入射角下超熱電子的角分佈；激光不同偏振態下超熱電子的角分佈；激光預脈沖對超熱電子角分佈的影響；不同能段的超熱電子的角分佈。第二，超熱電子能量分佈的研究，包括不同方位超熱電子的能量分佈，金屬與非金屬靶材的超熱電子的能量分佈，金屬原子序數z對超熱電子能量分佈的影響以及不同能段超熱電子的能量分佈。第三，研究了超短超強激光與固體靶相互作用所產四川大學博士學位論文生的高能質子發射和能譜。
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