額外形成層 的英文怎麼說

中文拼音 [éwàixíngchéngcéng]
額外形成層 英文
supernumerary cambium layer
  • : 名詞1 (額頭) forehead:寬額 a broad forehead2 (牌匾) a horizontal tablet 3 (規定的數目) a sp...
  • : Ⅰ名詞1 (外面) outside; external side 2 (外國) foreign country 3 (以外) besides; beyond; in ...
  • : Ⅰ動詞1 (完成; 成功) accomplish; succeed 2 (成為; 變為) become; turn into 3 (成全) help comp...
  • : i 量詞1 (用於重疊、積累的東西 如樓層、階層、地層) storey; tier; stratum 2 (用於可以分項分步的...
  • 額外 : (超出規定數量或范圍的) extra; additional; added
  1. Sige simox : oxygen ions with high dose were implanted into sige grown directly on silicon substrate for the first time, and sige - oi novel structure was formed successfully with additional high temperature annealing ; it has been confirmed that oxygen implantation with 45kev, 3 1017cm - 2 and annealing at 12500c in ar + 5 % o2 for 5 hours, are fit for the formation of sige - oi structure ; ge loss during the high temperature annealing has been observed, which is originated from ge volatility and ge diffusion ; it has been proposed to use nanoporous layer induced by h + / he + implantation to surppress ge diffusion and to use surface oxidation to overcome the upper limit of sige simox. sige smart - cut : hydrogen ions were implanted into sige material and followed by high temperature process ( 4000c to 7000c ) ; blistering study was done and suggested the possibility of sige layer transfer by smart - cut technology ; it is concluded that the bubble formation is easier in sige than in si, and the strain in sige / si and the difference of binding energy in sige and in si could possibly contribute to this effect. behavior of sige / si implanted with hydrogen : gave a detailed study on sige implanted by beamline or phi hydrogen implantation ; it has been found that great strain is introduced into sige by hydrogen implantation and this strain could be alleviated by high temperature annealing ; both for conditional beamline implantation and piii hydrogen implantation, 600 is appropriate for the post - implantation treatment

    Sige - simox工藝方面:首次採用硅( 100 )襯底上直接延的100nm厚sige的樣品中注入高劑量的o離子,通過退火處理功制備了sige - oi新結構,即sige - simox工藝,證實了以45kev注入3 10 ~ ( 17 ) 7cm ~ ( - 2 )劑量的氧離子,隨后在氧化的保護下經1250 , ar + 5 o _ 2氣氛的高溫退火( 5小時)過程,可以制備出sige - oi新型材料;實驗中觀察到退火過程中的ge損失現象,分析了其原因是ge揮發( ge通過表面氧化以geo揮發性物質的式進入退火氣氛)和ge擴散( ge穿過離子注入的氧化埋而進入si襯底中) ,其中ge擴散是主要原因;根據實驗結果及實驗中出現的問題,對下一步工作提出兩個改進的方案:一是通過在si襯底中注入適量h ~ + / he ~ +納米孔來阻斷ge擴散通路,二是可以通過控製表面氧化來調節安止士淤丈撈要表面sige中的ge組分,從而部分解決sige
  2. Listed companies have great sum of capital by collecting funds publicly from society, whose capital has been socialized and scale is far lager than traditional companies, thus impact the society widely. high managers of listed companies have become more and more professional, and selected more from specialists out of the companies. besides stockholders, the employers, customers, suppliers, governments and communities outside listed companies have formed into groups of stakeholders, who are directly or indirectly related to listed companies

    上市公司的股權高度社會化,股東人數眾多;上市公司股權高度證券化,其資本證券具有極強的社會流通性;上市公司向社會公開募集資金,資本數龐大,實現資本的社會化,公司規模遠遠超過傳統的公司、企業,具有廣泛的社會影響;上市公司高級管理人員日益專業化、職業化和部化,職業經理人階;除了公司股東之,上市公司的雇員、顧客、供應商、政府和社區等公司部主體已經利益相關者集團,與公司存在直接或間接的利益關系。
  3. Dividend policy is that policy - making body of dividend adopts some tactics related to dividend policy which contain five of types : stable dividend policy, stable pay - out ratio policy, ladder dividend policy, residual dividend policy and regular dividend plus extras policy. the dividend policy of the listed company is influenced by many factors such as law, contracts, conditions inside the enterprises, shareholder wills, administration and supervision authorities etc.

    上市公司股利政策受法律、契約、企業內部條件、股東意願和管理等多種因素影響,了包括穩定的股利政策、固定比率股利政策、階梯式的股利政策、剩餘股利政策及低正常股利加股利政策五種類型的股利政策。
  4. Dental sealants can provide a further layer of protection against cavities. the plastic coating is painted on the grooved chewing surfaces of the back teeth

    牙科封閉劑可以的保護以抵禦齲壞。方法是在後牙的窩溝表面塗布樹脂覆蓋料。
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