驅動能力 的英文怎麼說
中文拼音 [qūdòngnénglì]
驅動能力
英文
drive capability-
The hetrojunction device fabricated with sige material has shown great advantages over bulk sample in many aspects : higher carrier mobility, larger transconductance, stronger drive capability and hence faster circuit speed
與體si器件相比，採用sige材料的異質結器件已經在許多方面顯示出了強大的優勢:譬如更大的載流子遷移率，更大的跨導，更強的電流驅動能力以及更快的電路速度等等。Strained - soi mosfet, which appears recently, takes both the advantages of soi ( silicon on insulator ) and sige ( silicon germanium ). it has shown advantages over bulk sample in enhanced carriers mobility, as well as higher transconductance, stronger drive capability and reduced parasitic capacitances. these properties make it a promising candidate for improving the performance of microelectronics devices
Strained - soimosfet是最近幾年才出現的新型器件，它將soi材料和sige材料結合在一起，與傳統體硅器件相比，表現出載流子遷移率高、電流驅動能力強、跨導大、寄生效應小等優勢，特別適用於高性能、高速度、低功耗超大規模集成電路。By comparing and analyzing the advantages and disadvantages of three kinds of voltage reference circuits, type of current density ratio compensation 、 weak inversion type and type of poly gate work function, a cascode structure of type of current density ratio compensation is chosen to form the core of voltage reference circuit designed in this paper. applying the negative feedback technology, an output buffer and multiply by - 2 - circuits are designed, which improve the current driving capability
然後通過比較和分析電流密度比補償型、弱反型工作型和多晶硅柵功函數差型三種帶隙電壓基準源電路結構的優缺點，確定了電流密度比補償型共源共柵結構作為本設計核心電路結構，運用負反饋技術設計了基準輸出緩沖電路、輸出電壓倍乘電路，改善了核心電路的帶負載能力和電流驅動能力。Based on the hydrodynamic energy transport model, the influence of variation of negative junction depth caused by concave depth on the characteristics of deep - sub - micron pmosfet has been studied. the results are explained by the interior physical mechanism and compared with that caused by the source / drain depth. research results indicate that with the increase of negative junction depth ( due to the increase of groove depth ), the threshold voltage increases, the sub - threshold characteristics and the drain current driving capability degrade, and the hot carrier immunity becomes better in deep - sub - micron pmosfet. the short - channel - effect suppression and hot - carrier - effect immunity are better, while the degradation of drain current driving ability is smaller than those with the increase of depth of negative junction caused by source / drain junction shallow. so the variation of concave depth is of great advantage to improve the characteristics of grooved - gate mosfet
基於能量輸運模型對由凹槽深度改變引起的負結深的變化對深亞微米槽柵pmosfet性能的影響進行了分析，對所得結果從器件內部物理機制上進行了討論，最後與由漏源結深變化導致的負結深的改變對器件特性的影響進行了對比.研究結果表明隨著負結深（凹槽深度）的增大，槽柵器件的閾值電壓升高，亞閾斜率退化，漏極驅動能力減弱，器件短溝道效應的抑制更為有效，抗熱載流子性能的提高較大，且器件的漏極驅動能力的退化要比改變結深小.因此，改變槽深加大負結深更有利於器件性能的提高This arrangement lets an op - amp capable of driving a few tens of milliamps control an amp or so of current across the pass transistor
這樣的安排可以讓一個運放有幾十毫安的驅動能力來控制一個放大器或者控制調整管的電流。Digital to analog converter, analog integrated filter, bandgap reference and high drive capability operational amplifier are indispensability basic circuit of communication system
數模轉換器、模擬集成濾波器、基準電壓源和高驅動能力運放等電路是通信系統中不可缺少的基本電路。The procedure of the test is as follows : first, the piezoelectric stack has been examined to test the performance parameters of the piezoelectric material ; second, the 2 - x actuator has been functioned with different static voltage to test its capability ; last, function the 2 - x actuator with voltage with different frequencies to test its dynamic properties. all the output of the actuator has been measured by the laser vibration measurement
首先對壓電堆進行試驗，驗證壓電材料的性能參數;再對推挽式雙x驅動器施加不同的靜電壓驅動它，驗證作動器的驅動能力，最後對推挽式雙x驅動器輸入不同頻率的電壓驅動，測量該驅動機構的動態特性，試驗均採用激光測試儀測量推挽式雙x驅動器的輸出特性。From computer directly, the device can get data from two specifically wav files which have double channels of data, and whose sample rate are 44100, and whose resolution are 16. then it makes digital signals convert into anolog signals and amplify them at the same time. at last, according to actual need, it can supply continuous anolog audio output of enough power and high fidelity at different speed
該設備可以直接從計算機獲取兩個雙聲道、 16位解析度、 44100hz采樣率的wav （ waveform ）聲音文件的數據，並同時將兩個聲音文件的數據進行數模轉換和信號放大，最終以能滿足實際生產需求的較高速率連續地輸出具有足夠驅動能力和高保真度的模擬信號，為終端高速磁帶復錄子機提供穩定可靠的音源。After structure design aimed to high transconductance, parameters of device structure are modified in detail. the simulation results of soi nmos with strained si channel show great enhancements in drain current, effective mobility ( 74 % ) and transconductance ( 50 % ) beyond conventional bulk si soi nmosfet. the strained - soi nmosfet fabrication process is proposed with lt - si ( low temperature - si ) technology for relaxed sige layer and simox technology for buried oxide
其次，根據器件參量對閾值電壓和輸出特性的影響，以提高器件的跨導和電流驅動能力為目的設計了strained - soimosfet器件結構，詳細分析柵極類型和柵氧化層厚度、應變硅層厚度、 ge組分、埋氧層深度和厚度以及摻雜濃度的取值，對器件進行優化設計。What matters most in this case is the high - transient - drive capability of the output
在這種情況下，重要的是輸出端要有高的瞬態驅動能力。In this case, what matters most is the high transient - drive capability of the output
在這種情況下，重要的是輸出端要有高的瞬態驅動能力。Be self - motivated and proactive, sense of responsibility and able to work under pressure
很強的自律與自我驅動能力，認真負責，能承擔工作壓力。Stn panels are superior to tn panels in more duty cycles and excellent opto - electro functions
Stn比tn具有更高路數的驅動能力和優異的電光性能。To further enhance its drive capabilities, twin line now includes a fourth product family, the tlc 63
為了進一步提高其驅動能力， twinline現在有了第4個產品系列： tlc63 。Because twist angle can stay at 180o 240ofor stn type this type is applicable to higher drive fstn type
Stn顯示模式中液晶分子的扭曲角為180o 240o ，因此可以適應更高的驅動能力A connector soldered to the printed circuit board the type of the pin : 2. 54mm, 2. 0mm, 1. 8mm. it can be used to such thick glasses : 1. 1mm, 0. 7mm, 0. 55mm
Stn顯示模式中液晶分子的扭曲角為180o 240o ，因此可以適應更高的驅動能力But its limited hardware structure and driving ability make it difficult to build up remote one - wire systems. fieldbus is often adopted in the construction of large - scale dcs
但是受總線的硬體結構、驅動能力及其作用距離的限制，遠程單總線測控系統的實現有一定的難度。It has better output current accurate than normal 8 - channel - led driver ic with constant current, more output channels and better output current regulate accurate
它相比以往常用的8通道led恆流驅動器，具有更強的多通道驅動能力、更優的輸出電流調節精度以及更高的電流匹配精度。If the chip remains sending state, it will take the data spread spectrum and modu - late, then sent forth by ad9768. the chip can be controlled throug h writing data in the interior 87 registers. secondly, this paper designed control system of twice civil air defense alarm system. because the scm " s port number was limited and port driving power is feebleness, this design realizes nixie tube ' s display drive with keyboard management chip max7219 and realizes true time display with ds1302, which can economize scm i / o port and make circuit connection simplicity
通過對其內部87個寄存器寫入數據可對其進行控制。其次，本文對二次人防警報系統控制系統進行設計，針對單片機埠數目有限、埠驅動能力較弱等問題，使用鍵盤管理晶元max7219實現數碼管顯示驅動，用ds1302實現真時鐘顯示，節省了單片機i / o口，電路連接簡單。Adaptive structures with distributed piezoelectric systems are widely applied in many industries, such as aerospace industry. in this paper, the main achievements include : first, the laws and properties of piezoelectrics are discussed in detail and the selection of piezoelectric actuator is presented
壓電自適應結構是利用壓電材料的性能，使結構具有承載、傳感和驅動能力，在航空航天等領域有著重要的應用前景。分享友人