高場遷移率 的英文怎麼說

中文拼音 [gāochǎngqiānyílǜ]
高場遷移率 英文
high-field mobility
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 場 : 場Ⅰ名詞1 （平坦的空地 多用來翻曬糧食 碾軋穀物） a level open space; threshing ground 2 [方言] （...
  • 遷 : Ⅰ動詞1. （遷移） move 2. （轉變） change 3. （古時指調動官職） be appointed to a certain post Ⅱ名詞（姓氏） a surname
  • 移 : Ⅰ動詞1. （移動） move; remove; shift 2. （改變; 變動） change; alter Ⅱ名詞（姓氏） a surname
  • 率 : 率名詞（比值） rate; ratio; proportion
  • 高場 : gaochang
  • 遷移 : move; remove; migrate; shift; transport; migration; transference; removal
  1. For strained si pmosfets, the hole mobility is not only determined by the tensity of strain, but also related to the strain types, which are uniaxial compressive strain and biaxial tensile strain. when electric field is high enough, the hole mobility will be deteriorated in pmosfets under biaxial tensile strain, however, in the case of uniaxial compressive strain, the deterioration will never occur

    經模型分析發現，應變硅pmosfet空穴遷移率與應力作用方式有如下關系:當橫向電場較高（ > 5 105v / cm ）時，雙軸張應力作用下的應變硅pmosfet的空穴遷移率將發生退化，而單軸壓應力器件則不會受到影響。
  2. We can lessen the dangling bonds and bug in order to improve the ion / ioff 、 vth by hydrogenation. in general, hydrogenation is prepared after completing of tft, in this way, we need more radio frequency power and time, so the cost of hydrogenation will raise

    而通過氫化可以大大降低多晶硅薄膜晶粒邊界中的懸掛鍵和界面陷阱，從而顯著提高tft的場效應遷移率和開態電流，減少關態電流，提高tft的電學性能。
  3. For the application of sic devices to radiation fields, it is important to know the irradiation effects and characteristics of sic materials and devices. the main contributions in this thesis are as following : temperature - and electric field - dependent electron transport in 6h - s1c is studied by single - particle monte carlo technique. the physical model used in the simulation is developed considering the main scattering mechanisms in details

    為了能充分發揮sic抗輻照的優勢和潛力，本文首先對sic區別于常規半導體的特性作了系統的研究：用單粒子montecarlo方法研究了6h - sic的電子輸運規律，模擬的結果體現了6h - sic具有良好的高溫和高場特性以及遷移率的各項異性，其橫向遷移率和縱向遷移率相差近5倍。
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