高壓集成電路 的英文怎麼說

中文拼音 [gāoyājíchéngdiànlù]
高壓集成電路 英文
high voltage integrated circuit
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 壓 : 壓構詞成分。
  • 集 : gatherassemblecollect
  • 成 : Ⅰ動詞1 （完成; 成功） accomplish; succeed 2 （成為; 變為） become; turn into 3 （成全） help comp...
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 路 : 1 （道路） road; way; path 2 （路程） journey; distance 3 （途徑; 門路） way; means 4 （條理） se...
  • 高壓 : 1 （殘酷迫害; 極度壓制） high handed 2 [氣象學] （高氣壓） high pressure3 （高電壓） high tension...
  • 集成 : integration集成晶體管 integrated transistor; 集成元件 integrated component
  • 電路 : [訊] circuit （ckt）; electric circuit; electrocircuit電路板 circuit board; 電路保持 guard of a c...
  1. Dds951 series electronic single - phase electric meter is the most advanced static electronic meter in china. the meter designs use large - scale intergated circuit. high reliability step motor, it can the ac single - phase active energv voltage rating : 220v : frequency 50hz, positive and negative two directions and accumulates in one direction. the test singnal is isolated by phototransistor : it also has the function of anti - fraud, and indicates it s operation situation on flash light, so it could be managed very easy

    Dds951單相電子電能表，是金雀儀表公司開發的新型電度表。該產品是採用規模專用集成電路，高可靠性步進電機等先進技術製造的國內最新電能試題新產品，用來計量額定電壓為220v ，頻率為50hz的交流單相有功電能，該產品能夠精確計量正負兩方向的有功電能，且以同一個方向累計。
  2. The macro model of drift region resistance was established based on the solution of poisson ’ s equations and continuity equations. by the combination of spice mos ( level = 3 ) and the macro model, the complete dddmos model was then obtained, which accords well with simulated data. by simulating and comparing different devices of different process parameters, the model is applicable for different bias regions and can be useful in the power integrated circuit research in future

    首先介紹了器件建模的基本原理及相關模擬技術，然後利用工藝模擬軟體生成器件基本結構，並對其基本特性進行了分析;分析了業內和學術界比較通用的高壓器件建模的方法，隨后在模擬實驗的基礎上著重分析了dddmos的物理特性，在求解泊松方程、連續性方程等基本方程的基礎上，建立有物理意義的漂移區電阻的宏模型;隨后結合spicemos （ level = 3 ）模型而得到完整的dddmos模型，此模型與模擬數據符合得比較好，通過對不同工藝參數的器件進行模擬比較，該模型能夠覆蓋不同的工作偏壓范圍，具有較明確的物理意義，對今後的功率集成電路的研發有一定的參考意義。
  3. With the advance of semiconductor manufacturing, circuits with increasingly higher speed are being integrated at an increasingly higher density, which makes analysis and verification of power grid integrity more important. power grid integrity includes four issues, namely, ir drop analysis, ground bounce analysis, ldi / dt from the pin inductance and em analysis

    隨著超大規模集成電路集成度和工作頻率的不斷提高，電源網格完整性分析變得越來越重要，一般有四個關鍵問題： ir電壓降分析、接地點電勢上升（ groundbounce ）分析、來自引腳電感的ldi / dt分析和電子遷移率em分析。
  4. An entirely new structure of high voltage soi ldmos with located charge trenches in vertical and a lateral trench with a shape of u was studied. with lots of analysis on this new compound structure, the breakdown voltage was raised 30 % and size was reduced to 60 % of the common soi ldmos

    這樣，該復合結構不僅可突破普通高壓soimosfet器件的耐壓極限，同時也可以使器件尺寸減少30 %以上；是與國際水平同步的一項重要研究，對soi器件及其功率集成電路的研發具有重要的意義。
  5. In early prototypes the voltage needed to switch ion flow on and off was 75 volts, far too high to incorporate into modern integrated circuits

    在初期原型產品中，用以開關離子流的電壓為75伏特，遠高於目前集成電路所能承受的限度。
  6. This product, adopted pwm integrated circuit and mosfet, igbt that were imported from the overseas, has the following merits : quick - response, strong interfere - proof, stable frequency and voltage, low consumption when light loading, high efficiency and reliable performance, it can be applicable to the family use, pasture region, work with the wind generator and some other places where the power failure often occurs

    本品採用pwm （脈寬調制）集成電路和進口大功率mosfet 、 igbt等器件，具有應變快、抗干擾、自動穩定頻率和電壓、空載損耗低、效率高、性能可靠，是家庭，牧區，風力發電機配套以及其它野外經常停電地區提供交流電的必備的電器。
  7. According to the thickness of the soi film, high voltage ic based on soi material ( soi - hvic ) can be divided into thin - film and thick - film. for thin - film soi - hvic, linear drift region doping profile is adopted to satisfy a certain breakdown - voltage, but this process is too complex and its self - heating effect is obvious ; for thick - film soi - hvic, it can take advantage of cmos technology on silicon to obtain the high voltage

    Soi高壓集成電路根據頂層硅厚度可分為厚膜和薄膜兩大類。為了滿足一定的擊穿電壓，薄膜soi高壓電路一般採用漂移區線性摻雜技術，但其工藝復雜，且自熱效應嚴重;而厚膜soi高壓集成電路可以通過移植體硅cmos技術來實現高壓，但是由於其硅膜較厚，介質隔離成為厚膜soi高壓集成電路的關鍵技術。
  8. With the development of manufacturing technology of digital integrated circuit, the voltage test method based on stuck - at fault model can not detect all the faults in modern integrated circuit

    隨著集成電路製造技術的發展，基於固定型故障模型的電壓測試技術越來越不能滿足高性能集成電路的需求。
  9. This noncontact distributor assembly, which deletes mechanical breaker contact, utilizes ic ignition module assembly free of burn out of contact. therefore it has a higher ignition voltage, higher ignition volume, as well as functions of overvoltage protection, low speed & low voltage protection and power cut upon shut down. these functions are of benefit to improvement to the motive performance, economical efficiency and start up ability of engine while reduce waste exhaust

    該無觸點分電器總成取消了機械斷電器觸點，採用了集成電路組成的點火模塊總成，不存在觸點的燒蝕，因此點火電壓高，點火能量大，並具有過壓保護、低速低壓啟動、停車斷電等多項功能，有利於改善發動機的動力性，經濟性和起動性能，減少了排氣污染。
  10. Especially in cmos n - well integrated circuits technology, the body effect will cause the nmos threshold voltage following the pumping voltage to be lifted and then the highest pumping voltage will be limited

    特別是在n阱集成電路工藝，體效應使得每一階nmos管的閾值電壓都不斷抬升，以至於電荷泵的最高輸出電壓受到限制。
  11. Third, the circuit configuration and design principle of hall 1c fabricated in si bipolar process were considered. through analyzing and simulation, we understand the basic design technology of integrated hall switches. as a result, we designed the layout of a si bipolar integrated hall switch

    論文對si雙極型霍爾開關集成電路的工作原理其中包括穩壓電路、放大電路和觸發電路等進行了認真的分析和模擬，重點研究了溫度補償、電阻修調等關鍵技術，並完成了高精度si雙極型霍爾開關集成電路的版圖設計。
  12. This article describes the plc ’ s using enviroment and the users ’ needs in details, and then tells the differences between the dplc and the troditional plc. it also describes how to decimation and compress the tele - voice, how to deal with the data tunnels, and the multiplex data through the the line which ’ s bandwidth is changeable between 10. 8bps and 28. 8kbps this project uses the programmable vopp chips, the cpld for bus controlling, the fpga and the mcu with high processing ability. all of these ensure the high ability to process the signals and the operations

    本文詳細介紹了高壓電力線載波機的使用環境和用戶需求，全數字電力載波機和傳統模擬載波的的差異;按電力調度的需求設計完整的兩路語音、兩路數據的電力線載波通訊機。詳細描述電話語音的采樣，壓縮;數據通道的處理;及在10 . 8kbps 28 . 8kbps可變線路速率通道上的數據復接處理。從實現方法上看，該項目採用專用可編程vopp語音處理晶元， cpld晶元做為總線控制，大規模fpga集成電路，高處理能力的mcu 。
  13. In the electronic industry today, the combination of increasing complexity of todays asic and systems designs and relentless time - to - market ( ttm ) pressures has resulted in verification, especially functional verification, jumping to the top of the list of bottlenecks in the design and development of electronic products utilizing soc

    近幾年來隨著專用集成電路（ asic ）和系統晶元（ soc ）的復雜度的不斷提高，以及來自面市時間的巨大壓力，晶元驗證，尤其是功能驗證正日益成為電子產品開發和設計的「瓶頸」 。
  14. The paper is to propose a novel soi high - voltage structure and to design a soi power switch ic based on epitaxial simox substrate for an institute, which will be used on firing controlling system

    本文目的是為某軍工電路研究所設計，應用於某軍工系統研究所的火炮控制系統的soi高壓器件及功率開關集成電路。
  15. Owing to the requirement of big current and high voltage, the design of power devices is the key point in the research on power integrated circuit, and it has directly influenced the development of power integrated circuit

    功率集成電路中的高壓器件由於高壓大電流的性能要求一直是研發功率集成電路中的關鍵和難點，並直接影響著功率集成電路的發展。
  16. As one of the key device in soi hvic, soi lateral high voltage device has been deeply investigated in this field

    Soi高壓橫向耐壓器件是高壓集成電路的核心和關鍵，受到了國際上眾多學者的關注。
  17. With its high reliability, small area, high - speed performance and low power dissipation, the high voltage integrated circuit ( hvic ) has unchangeable effect in the area of military affairs, aviation and nuclear energy

    高壓集成電路hvic （ highvoltageintegratedcircuits ）具有可靠性高、體積小、速度快、功耗低等優點，在軍事、航空航天及核能等領域有著不可替代的作用。
  18. Soi hvic ( silicon on insulator high voltage integrated circuit ) is the mainstream and trend of the power integrated circuit ( pic ) due to the improved no latch - up, reduced leakage current, perfect irradiation hardness, and improved insulation

    Soi （ silicononinsulator ）高壓集成電路具有無閂鎖、漏電流小、抗輻射、隔離性能好等優點，已成為功率集成電路（ powerintegratedcircuit ）的重要發展方向。
  19. And then some terminal techniques on pic, devices simulation theory, resurfs effect and medici software are presented. at last three kinds of high voltage power devices have been designed and simulated. based on the analysis of the breakdown voltage and electric field distribution of the high power devices, the key physics and structural parameters effects on the breakdown voltage are found

    本文首先介紹了國內外功率集成電路的發展狀況，然後介紹了高壓集成電路中的幾種終端技術、 resurf效應、器件模擬的基本理論和medici器件模擬軟體，最後對三種型號的高壓功率器件的擊穿特性進行了分析和計算機模擬，指出了影響器件電壓的關鍵的物理和結構參數，並對這三種型號的器件進行模擬，得出的電特性曲線和參數基本上與公司給出的一致。
  20. With the technique, the new production provide advanced performance, smaller size, and reduced cost in this paper, the present status of motor control techniques, the present status of micro - electronics techniques, and the present status of integrated circuit techniques are reviewed. present some samples of ac motor driver ( dsp motor controllers, microprocessor controllers, motor control 1c controllers ). compare the performances of these ac motor drivers with each other

    本文查閱了大量的有關高壓集成電路技術、電子系統裝聯技術、電力電子器件、微電子技術、集成電路技術和交流異步電機變頻調速技術等方面的文獻，研製了三種具有代表性的交流異步電機變頻調速，從技術上論證了小型交流電機變頻調速系統集成化的可行性，對集成化過程中可能遇到幾個主要問題提出了解決方法。
分享友人
分享到 Line

分享到臉書