高能位錯 的英文怎麼說

中文拼音 [gāonéngwèicuò]
高能位錯 英文
dislocation of high energy
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 能 : 能名詞（姓氏） a surname
  • 位 : Ⅰ名詞1 （所在或所佔的地方） place; location 2 （職位; 地位） position; post; status 3 （特指皇帝...
  • 錯 : Ⅰ形容詞1 （錯誤; 不正確） wrong; mistaken; erroneous 2 （用於否定: 壞; 差） bad; poor 3 （交叉; ...
  • 高能 : high energy高能等離子體 energetic plasma; 高能點火 [航空] high energy ignition; 高能電池（組） hi...
  1. " yes, for you who detest those unhappy princes, beauchamp, and are always delighted to find fault with them ; but not for me, who discover a gentleman by instinct, and who scent out an aristocratic family like a very bloodhound of heraldry.

    「在你看來是這樣，你厭惡那些倒霉的親王，總是很高興能在他們身上發現過錯，但在我則不然，我憑本能就能辨別一位紳士，能象一隻研究家譜學的獵犬那樣嗅出一個貴族家庭的氣息。 」
  2. Thirdly, the paper discusses the driver of the peripheral equipment, how to port the uc / os - n and uclinux, h. 323 protocol and the application of the system in the digital speech classroom. also some software and hardware measure are adopted to enhance the system stability. at last, the shortcoming and the something to be improved are given. dsp can be used to realize real - time speech coding algorithm, and after porting ( ac / os - n, arm can manage the keyboard, the lcd and the ethernet peripheral etc. then the embedded network system with specific purpose can be used in others fields, such as pda, set of top, web tv, ect

    在實際設計實現中，為提高系統軟、硬體整體穩定性和可靠性，使用了以下幾種方法： （ 1 ）低電壓復位、抗電源抖動能力、增加時鐘監測電路、抗電磁干擾能力、散熱等技術； （ 2 ）多層pcb設計，線路板結構緊湊，電源部分採用數字5v 、 3 . 3v 、 3v 、 1 . 8v和模擬5v多電源供電； （ 3 ）選用表面貼和bga封裝的器件； （ 4 ）按照軟體工程的要求進行系統分析，規劃系統框圖、流程分析、模塊劃分，減小了不同模塊的相關性，從而最大限度避免了錯誤的發生。
  3. Duty field competition is fiercer and fiercer, a lot of people hope to be able to find oneself suit, salary is high, welfare works well, but, the footing that is in a company, like diligent, ability of course strong, suit the new employee of post, this article about blood type and job, your scarcely that serves as boss wants to miss

    職場競爭越來越厲害，很多人都希望能夠找到一份自己適合的，待遇高，福利好的工作，但是，在公司的立場而言，當然喜歡勤快、能力強，適合崗位的新員工，這篇關于血型與工作的文章，作為上司的你一定不要錯過哦！
  4. In addition, the exchange was configured with no m1 byte, and could not support far - end error indication on the multiplexing segment and low - order and high - order channels

    無m1位元組，不支持復用段遠端差錯指示功能，不支持高階通道遠端差錯指示功能、低階通道遠端差錯指示功能和低階通道遠端失效指示功能。
  5. Also it could realize the call processing function in cooperation with other exchanges via its stm - 1 interface. we suggest that ericsson further improve the frame synchronization detection feature and the s1 byte display feature on its stm - 1 exchange interface, and add far - end error indication on the multiplexing segment and low - order and high - order channels and far - end out - of - work indication on the low - order channel

    建議愛立信交換機stm - 1介面完善其幀同步檢測功能和s1位元組顯示功能，並增加復用段遠端差錯指示功能、高階通道遠端差錯指示功能、低階通道遠端差錯指示功能和低階通道遠端失效指示功能等傳輸告警功能。
  6. The exchange could not terminate m1 bytes, high - order channel far - end error indication signals, n1 bytes, low - order far - end error indication signals, n2 bytes, k4 bytes and low - order channel far - end out - of - work indication. instead, it could only send those bytes back to the originating side

    上海貝爾p3s交換機不能終結m1位元組、高階通道遠端差錯指示信號、 n1位元組、低階通道遠端差錯指示信號、 n2位元組、 k4位元組、低階通道遠端失效指示，而是將這些位元組回傳給發送端。
  7. It was proved that shanghai bell s p3s exchange could not terminate some alarm overhead bytes. instead, it sent back those bytes to mistake local errors for far - end faults. we suggest that shanghai bell terminate such bytes, improve the frame synchronization detection function and the processing of s1 bytes, and add far - end error indication on the multiplexing segment and low - order and high - order channels and far - end out - of - work indication on the low - order channel

    測試結果表明，上海貝爾p3s交換機不能夠終結某些告警開銷位元組，而是將這些位元組進行回傳，從而將本端的錯誤誤認為是遠端的錯誤，建議上海貝爾p3s交換機按終結方式處理這些位元組，完善幀同步檢測功能和對s1位元組的處理，並增加復用段遠端差錯指示功能、高階通道遠端差錯指示功能、低階通道遠端差錯指示功能和低階通道遠端失效指示功能等傳輸告警功能。
  8. At last, vibration can make dislocation of metal slip and climb, which dissipate the vibration energy to reduce noise while cutting

    此外，由於夾層b為高塑性金屬，振動使其內部的位錯產生滑移和攀移，以消耗部分振動能，也是降低噪聲的原因之一。
  9. Basic interoperability test is designed to check alarms on physical connections, the error rate of information delivery and the 2mbits cross - connect state when stm - 1 signals pass the transmission system. high - level interoperability test is to check the consistency of generated against readout overhead bytes, alarms and the performance monitoring as well as the synchronization, protection rotation, the interworking possibility of nm information and the o & m capability

    基本互通能力測試包括：檢查物理連接是否告警，檢查信息傳送有無差錯，交換機stm - 1經過傳輸系統進行2mbits交叉連接的測試；高層次互通能力測試包括：開銷位元組產生和讀出的一致性，告警一致性，性能監視一致性，同步，保護倒換，網管信息互通的可能性及維護操作能力的測試等。
  10. In angle measuring, an antenna configuration and interferometer ambiguity - resolving algorithm are proposed, and to eliminate the error caused by carrier phase error, a correction method is introduced, through which all ambiguity - resolving error can be recognized and he corrected even when the error probability is up to 0. 42

    在測角中，提出了一種干涉儀天線陣結構和干涉儀解模糊演算法，針對通道載波相位誤差可能引起的解模糊錯誤，又提出了一種糾正方法，模擬顯示，在發生解模糊錯誤的概率高達0 . 42的情況下，該方法仍然可以識別並糾正所有解模糊錯誤。
  11. At the same time, water quenching at 190 aging exhibit the highest damping capacities. compared with furnace cooling which show the highest damping capacities in five heat treatments, it show higher damping capacities when tempera ture is under 120 and above 290. further more, it show constantly damping value ( tan above 0. 004 ), but the damping value of furnace cooling is just 0. 0015 under 75

    水淬試樣在190的時效溫度下有最高的阻尼性能，通過與爐冷試樣的阻尼性能（五種熱處理制度爐冷試樣的阻尼性能較高）對比發現，在溫度低於120 、高於290范圍，水淬試樣在190時效溫度下的阻尼性能均高於爐冷試樣的阻尼性能，在120 290之間，它的阻尼性能低於爐冷試樣的阻尼性能，而此溫度區間正好是位錯內耗峰出現的溫度范圍。
  12. From discussing the factors that influence the quality of the single - crystal, a positive method using the floating - boat method from the british mr corp. to control the diameter of the single - crystal was determined, and produced the highest quality low epd single - crystals international

    該實驗討論了各種因素對拉制磷化鎵單晶的影響。並確定了一套較優越的拉制方法，制備出了國際上現階段所能達到的最高水平的低位錯單晶。
  13. In this project we use etching method x - ray transmission and tem observe and study the form mechanism of cell structure and linear structure ; use sem observe cell structure directly and evaluate effect to the electrical properties of substrate ; at last, use high resolution tem and eds to observe and identify the nature of microdefects

    發現幾乎所有高位錯密度的si - gaas單晶的表層都具有網路狀胞狀結構或系屬結構，首次對該胞狀結構和系屬結構的形成機制進行了研究；直接觀察微缺陷，配合eds （能量色散譜）鑒定si - gaas中微缺陷的物理本質，同時分析其產生原因，討論與位錯的相互作用。
  14. It is indicated that the relaxation of elastic energy stored during the forward martensitic transformation is responsible for the expansion of transformation hysteresis, which is in good agreement with experimental results associated with the hysteresis enlargement by deformation of niti, niti - based and cualni shape memory alloys

    結果表明，塑性變形產生的位錯以及變形的第二相顆粒對逆馬氏體相變溫度的提高具有一定作用，但塑性變形導致應變能釋放才是形變提高形狀記憶合金相變滯后的主導因素。
  15. The dislocation - free, low defects densities crystal are acquired, in which the impurities concentration is decreased, their distribution are uniform, and the gaas crystal has high uniform and purity characteristics

    利用m - lec法可以消除單晶中的位錯，降低缺陷密度，降低單晶中的雜質含量，並能使雜質在晶體中的分佈均勻，得到晶體均勻性、純凈度都高的gaas單晶。
  16. What ' s more, the amount of oxygen precipitates, dislocations in silicon and the orientation of the pressed surface also influence the fracture strength. stress - strain curves were studied at room temperature. in another experiment, brittle - ductile transition ( bdt ) of ncz and cz were studied for first time

    常溫下氮硅單晶（ ncz ）及普通硅單晶（ cz ）的斷裂強度研究發現，氮的摻入提高了機械性能，並且不同氧沉澱量、位錯的存在及不同晶向對硅材料機械強度也有較大影響。
  17. The high density dislocations behave like deep - level donors and the dislocations scattering is considerable at low temperature especially. besides, when the insb buffer layer thickness became 80nm, the roughness of insb epilayer increased. the initial stage of insb growth on gaas substrate is

    透射電子顯微鏡發現，在insb / gaas薄膜的界面處分佈有間距為3 . 5nm的失配位錯陣列，界面處的高密度位錯可體現出類似深能級施主的特性，尤其在低溫下對載流子散射更加顯著。
  18. The experimental results showed that firstly, the distribution of resistiveity, mobility, carrier concentration, epd and ab - epd in gaas substrate was not uniform ; secondly, the distribution of electrical parameters depended on that of epd and ab - epd ; thirdly, mesfet devices performance correlated with ab microdefects ; last, as shown by pl mapping results, it is substrate with better parameters quality that could provide more chance to fabricate good mesfet devices

    實驗結果表明， lecsi - gaas的電阻率、遷移率、載流子濃度、位錯密度和ab微缺陷分佈都不是均勻的，且電參數的分佈與ab - epd 、位錯密度分佈有關。製作的mesfet器件的性能參數分佈與ab微缺陷有明顯聯系。從plmapping測量結果可以看出材料的襯底參數好，則pl譜的強度高， pl譜均勻性也好，器件參數也好，就有可能製作出良好的器件與電路。
  19. The dislocation stress fields and dislocation energy in polymer materials

    高分子材料中的位錯應力場及位錯能量
  20. The study indicated that intensity of materials was enhanced because tic and zrc diffused in cu matrix, and counterworked the motion of dislocation. the cu - based composite materials that prepared in situ synthesis have more fine capability. the upper density was gained when pressing pressure was increasing, and sintering temperature was 800

    研究表明， zrc 、 tic在銅基體中形成彌散強化，阻礙位錯移動，提高材料的強度；用原位合成的cu - 50 tic粉末做原料制備的銅基復合材料具有相對優良的綜合性能；提高壓制壓強，在800燒結可得到較高的緻密度，而材料緻密度的提高會提高材料的各項性能。
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