高頻放大 的英文怎麼說

中文拼音 [gāobīnfàng]
高頻放大 英文
high frequency amplification
  • : Ⅰ形容詞1 (從下向上距離大; 離地面遠) tall; high 2 (在一般標準或平均程度之上; 等級在上的) above...
  • : Ⅰ形容詞(次數多) frequent Ⅱ副詞(屢次) frequently; repeatedly Ⅲ名詞1 [物理學] (物體每秒鐘振動...
  • : releaseset freelet go
  • 高頻 : high frequency
  • 放大 : amplify; magnify; boost; enlarge; blow up; gain; amplification; enhancement; multiplication; magn...
  1. In the blue print of the analog, author utilize the big dynamic vga to realize the if amplifier and use the audion to carry out the 80db agc, through the improvement of the traditional detect circuit, extend the dynamic range of the detector

    在模擬方案中,筆者採用了動態的vga實現中;利用三極體檢波實現了80db的agc控制;通過對傳統二極體檢波電路改進,提了檢波器的動態范圍。
  2. The experimental result expresses that the frequency doubler - power amplifier sets of ka - band can supply good local oscillation source for " millimeter - wave front - end of " lmds " ". the model has the advantages of low cost, small size and high reliability

    實驗結果表明,倍組件能夠為lmds毫米波前端提供很好的本振源,並且具有成本低、體積小、可靠性等優點。
  3. A uhf sensor is designed and fabricated, which mostly consists of antenna, uhf amplifier, high pass filter, and broadband wave detector

    通過與華無線電廠合作,研製了超傳感器,其主要由天線、超高頻放大器、通濾波器、寬帶檢波器等組成。
  4. Through analysising the characteristics of the power system with floating neutral point deeply, the paper puts forward a new plan of single - phase to ground fault line selection on the base of s ' s signal injecton method and gives the hardware and software design. in this design, the high speed sampling and data processing is carried out through using dsp processor ; the large electrice current is drived through the application of a high - performance audio power amplifier and transformer ; the communication between host computer and detectors is realized through rs485 bus technology ; the difference multilevel frequency - selected amplifier is designed and the feeble signal of space is sampled on the base of the theory of magnetic induction ; the interface between dsp and exterior chip and rs485 interface logical is designed through using fpga ; the using of lcd module and keyboard interfacing chip makes the interface between human and machine ; the programme of host computer and detectors is designed through using blocking design method

    在本設計中,採用速的dsp處理器,實現了對故障特徵信息的速採集與處理;採用功率的功晶元與變壓器配合的方法,實現了電流信號的驅動輸出;採用485總線技術,組建了裝置主機與多探測器之間的主從式通訊網路,實現了多干擾條件下裝置主機與多探測器的可靠通訊;設計了差分式多級選電路,採用磁感應的方法實現了對空間微弱信號的接收;利用fpga技術,實現了控制器與多外設的介面及數字信號的串並轉換;採用了先進的lcd液晶顯示模塊及鍵盤介面晶元,設計了人機信息交互的介面;採用了模塊化的軟體設計方法,開發了裝置主機及探測器的軟體程序。
  5. In wavelength conversion based on four - wave mixing ( fwm ) in soa, balance efficiency can be obtained in larger range when increasing saturation power of the optical amplifier and decreasing the saturation power of spectral hole burning and carrier heating

    而在基於soa的四波混( fwm )波長轉換中,在提器飽和功率的同時減小光譜燒孔( shb )和載流子加熱( ch )飽和功率可有效提率間隔處的轉換效率,並保持其在較率失諧范圍內的效率均衡。
  6. In active section, in order to meet performance of out put power above 10dbm, the power amplifier module of ka - band is fabricated by using hmc283 to achieve the 14db conversion gain. there are five parts that include of waveguide - to - microstrip ? mixer ? filter ? power amplifier and waveguide - to - microstrip. input signal ' s power is 10dbm, after it pass waveguide - to - microstrip, it ' s frequency is escalate from 30ghz to 35ghz

    該組件由五個部分組成:功率為10dbm信號經過波導? ?微帶過渡,然後混,濾波將30ghz提到35ghz濾除不需要的諧波鏡以及三階交調信號,為了彌補混濾波的變損耗,加一級功率器,此器採用hittle公司hmc283晶元,此上變組件完成了上變?濾波?功能。
  7. The class - d voltage switching amplifier technology is adopted to develop the rf amplifier

    器採用效率的class - d開關技術。
  8. In the thesis, a high efficiency linear am amplifier is developed, which is based on the basic theory of eer linearization amplifier technique [ 1 ]. the high efficiency digital audio amplifier technology [ 2 ] is adopted to develop the power supply modulator and the class - d switching amplifier technology [ 3 ] is adopted to develop the high efficiency rf amplifier

    本論文利用eer ( envelopeeliminationandrestoration )線性功技術的基本原理[ 1 ] ,採用數字音技術[ 2 ]實現效率電源調制器,採用class - d開關技術[ 3 ]實現效率載器,開發了一個集am調制和於一體的效率線性功率器。
  9. Blank detail specification - case - rated bipolar transistors for high frequency amplification ; german version en 150007 : 1991

    空白詳細規范.高頻放大額定功率雙極晶體管
  10. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  11. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  12. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  13. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  14. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section 4 : blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件.分立器件.第7部分:雙極晶體管.第4節:高頻放大雙極晶體管的空白詳細規范
  15. Semiconductor devices - discrete devices. part 7 : bipolar transistors. section four - blank detail specification for case - rated bipolar transistors for high - frequency amplification

    半導體器件分立器件第7部分:雙極型晶體管第四篇高頻放大管殼額定雙極型晶體管空白詳細規范
  16. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低高頻放大用額定周圍環境的雙極晶體管
  17. Semiconductor devices ; discrete devices ; part 7 : bipolar transistors ; section one : blank detail specification for ambient - rated bipolar transistors for low and high - frequency amplification

    半導體器件.分立器件.第7部分:雙極性晶體管.第1節:低高頻放大用的額定環境晶體管的空白詳細規范
  18. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  19. Simultaneously we append a high frequency amplifier in the high frequency sector, in order to recover the reduction of the gain in the new system

    同時,在改進后雷達的部分增加高頻放大器,以抵消天線改進后引起的增益下降。
  20. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低高頻放大用環境溫度額定雙極晶體管
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