高頻放電 的英文怎麼說

中文拼音 [gāobīnfàngdiàn]
高頻放電 英文
high frequency discharge
  • 高 : Ⅰ形容詞1 （從下向上距離大; 離地面遠） tall; high 2 （在一般標準或平均程度之上; 等級在上的） above...
  • 頻 : Ⅰ形容詞（次數多） frequent Ⅱ副詞（屢次） frequently; repeatedly Ⅲ名詞1 [物理學] （物體每秒鐘振動...
  • 放 : releaseset freelet go
  • 電 : Ⅰ名詞1 （有電荷存在和電荷變化的現象） electricity 2 （電報） telegram; cable Ⅱ動詞1 （觸電） give...
  • 高頻 : high frequency
  • 放電 : [物理學] （electric） discharge; electro-discharge; discharging
  1. In the blue print of the analog, author utilize the big dynamic vga to realize the if amplifier and use the audion to carry out the 80db agc, through the improvement of the traditional detect circuit, extend the dynamic range of the detector

    在模擬方案中，筆者採用了大動態的vga實現中頻放大;利用三極體檢波實現了80db的agc控制;通過對傳統二極體檢波電路改進，提高了檢波器的動態范圍。
  2. This paper described that the working theory and characteristics by high frequency argon discharge gas chromatograph, application of analysis cum in high purity argon product

    摘要本文敘述了高頻氬放電離子氣相色譜的工作原理、特點；以及在高純氬氣產品分析中的應用。
  3. In recent years, the longitudinal pulsed - discharge gas lasers with diffusive cooling have received renewed interests. a compact low power pulsed laser with high repetition rate has potential importance in laser exploration, fine mechanical processing, photochemistry and so on

    近年來，縱向放電的脈沖氣體激光器重新受到了人們的重視，一種小型的低功率的高重復頻率脈沖激光器在激光探測、精細加工和光化學等許多應用領域，有重要的應用前景。
  4. The way of taking one nth out of capacitor ' s the first harmonic capacitive reactance as its nth harmonic impedance is verified whit the data from tang7c. according to the approximately estimating method, the first harmonic impedance of 220kv system is calculated. on the basis of the models, this paper gives the harmonic equivalent circuit of substation and gives the b ( n ) function of the harmonic time n. when the capacitors has different combination, b ( n ) ' s value will also change, with the inputting local measurement data, the paper studies the series and parallel resonance at the substation, and deduces that the reason the capacitor ' s fuse of tang6c is frequently interrupted is that its capacitor current contains a large number of 5th harmonics, and that the reason the discharging pt of tang7c capacitor being exploded is also that the 7th and 9th harmonic currents are amplified

    據此，對該站進行了串聯諧振分析和並聯諧振分析，並結合測試數據和有關變電站的運行記錄，指出了導致該站電容器湯6c頻繁燒保險的主要原因是5次諧波電流含量偏高，引起湯7c放電pt爆炸也是因為7次和9次諧波電流被放大。針對這些導致湯陰變電站補償電容器故障的原因，提出了相應的諧波治理措施，包括針對湯6c電容器5次諧波電流含量偏高的原因，提出了停運湯6c電容器或者通過把湯sc電容器的部分容量併入湯6c電容器（湯sc其餘部分停運）以增加湯6c諧波承受能力的措施;針對# 2變低壓側7次和9次諧波電流被放大的現象，提出了在湯7c電容器上加裝一定百分比的串聯電抗器的措施。
  5. The factors limiting the frequency band of the wide - band amplifier are introduced. through analyzing the effects of the intrinsic parameters and parasitical on the frequency characteristics, a method of improving fr of mosfet by using short channel device and making mosfet work at the saturation region through raising vgs is put forward ; the effects of different kinds of circuit configurations on the frequency characteristics and the junction voltage on the voltage pattern circuit, current pattern circuit and frequency characteristics are analyzed. according to the linear theory of transconductance which is applied in the bit circuit, the current pattern amplifier circuit, current transfer circuit and output circuit which consist of mosfet and the wide - band amplifier composed of them are put forward

    介紹了限制寬帶放大器頻帶寬度的因素，通過分析mosfet的本徵參數、寄生參數對頻率特性的影響，提出了採用短溝器件、使mosfet工作在飽和區、抬高柵源電壓等提高mosfet特徵頻率的方法；分析了不同電路組態對放大器頻率特性的影響、節點電壓對電壓模電路、電流模電路頻率特性的不同影響，根據應用於雙極晶體管電路的跨導線性原理，提出了採用mosfet構成的電流模放大電路、電流傳輸電路、輸出電路以及由它們所組成的寬帶放大器，獲得了良好的頻率響應。
  6. The second, at the high frequency primary coil, when switch turn on with control signal ( the spwm pulse is modulated ), in the positive or negative semi - period of low frequency modulation signal, transformer coil with same direction voltage. the magnetic flux of transformer core will increase step by step. at the end, it leads to magnetic flux saturation

    二、在高頻變壓器原邊，當開關管接收控制信號脈沖列（經調制的spwm波列）導通時，在低頻調制信號的正半周或負半周內，施加在變壓器繞組上的是同一方向的電壓，變壓器磁芯中的磁通可能將級進地逐漸增加，導致磁芯飽和，造成磁偏或單向磁化，導致低頻電信號放大失真或由於很大的磁化電流而無法正常工作。
  7. The development of an electrosurgical apparatus with puls e width control

    一種脈寬控制的高頻電刀功率放大器的研製
  8. Based on an analysis of uhf ( ultra - high - frequency ) characteristic of pd ( partial discharge ) in power transformer, using mixing technique, a signal disposal cell has been devised for the sake of facilitating common data sampling card

    摘要在分析了電力變壓器局部放電的超高頻特性的基礎上，利用混頻技術，設計了局部放電超高頻信號的信號調理單元，方便普通數字採集卡採集。
  9. Compound pattern ( 6. 4 % ), its scatter map of isi series displayed two or more oscillation patterns. 4. after the bath in 1. 8 - 3 u mol / l veratridine, touch or pressure on the l5 receptive fields could trigger some primary silent drg neurons to produce high - frequency firing, termed triggered oscillation, whose interspike intervals ( isi ) showed u - type or other types of oscillations

    在部分靜息神經元lsdrg浸浴壹蘆堿后，觸壓該神經元的皮膚感受野，可以觸發產生持續數秒至數十秒的高頻放電，在散點圖上，其isi序列形成u字形或彌散形等型式的振蕩，稱之為觸發振蕩。
  10. A uhf sensor is designed and fabricated, which mostly consists of antenna, uhf amplifier, high pass filter, and broadband wave detector

    通過與大華無線電廠合作，研製了超高頻傳感器，其主要由天線、超高頻放大器、高通濾波器、寬帶檢波器等組成。
  11. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1162

    電子元器件詳細規范. 3da1162型硅npn高頻放大管殼額定的雙極型晶體管
  12. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da1722

    電子元器件詳細規范. 3da1722型硅npn高頻放大管殼額定的雙極型晶體管
  13. Detail specification for electronic components. case rated bipolar transistor for silicon npn high - frequency amplification for type 3da 2688

    電子元器件詳細規范. 3da2688型硅npn高頻放大管殼額定的雙極型晶體管
  14. Specification for harmonized system of quality assessment for electronic components - blank detail specification : case - rated bipolar transistors for high frequency amplification

    電子元器件質量評定協調體系規范.空白詳細規范.高頻放大用管殼額定雙極晶體管
  15. Specification for harmonized system of quality assessment for electronic components - blank detail specification : ambient - rated bipolar transistors for low and high frequency amplification

    電子元器件用質量評估協調體系規范.空白詳細規范.低頻與高頻放大用額定周圍環境的雙極晶體管
  16. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - case - rated bipolar transistors for high - frequency amplifications

    電子元器件質量評估協調體系.半導體分立器件.空白詳細規范.高頻放大用外殼溫度額定雙極晶體管
  17. High - frequency discharge lamp

    高頻放電管
  18. Based on the requirement of electrica l power plants, we designed a new type of sensors for stator winding partial discharge measurement online. the sensors are of good insulation, high sensitivity, easy installation on site, and good safety, suitable for on - site application

    根據現場的要求，本文研製出一種非接觸式空氣電容傳感器，它具有頻帶寬、絕緣性能好、靈敏度高的特點，可以在高壓端測量高頻放電脈沖，可以代替各種接觸式傳感器在發電機高壓母線端進行在線局部放電監測。
  19. It compares and analyses the equipment test voltage emendated to standard atmosphere conditions with the equipment nominal withstanding voltage. and then it concluded that : the emendation value educed by " humidity ratio " integrated emendation method is basically equal or close to the equipment nominal withstanding voltage ; but the values by two traditional emendation methods are mostly higher. it also proves that, " humidity ratio " integrated emendation method is more perfect than any other methods, and it can reflect the influence degree of atmospheric parameters on electrical equipment outer insulation discharge voltage actually

    文中選擇「比濕」綜合校正法和兩種傳統校正法，分別對西高所為羊八井、拉薩、羊湖110kv變電所設備所做的人工氣候室模擬試驗數據及雲南中試所做的zs - 110工頻放電電壓試驗數據進行校正計算，將試驗電壓的校正值與試驗設備的標稱耐受電壓水平進行比較分析；認為： 「比濕」綜合校正法的校正值與設備耐受電壓水平基本相等或接近，而兩傳統校正法的校正值大多高於設備耐受電壓水平；進一步證明， 「比濕」綜合校正法是目前諸多校正法中較為完善的，能真實地反映大氣參數對電氣設備外絕緣放電電壓的影響程度的校正法，在高海拔電力工程設計中應推廣應用。
  20. Specification for harmonized system of quality assessment for electronic components - semiconductor discrete devices - blank detail specification - ambient - rated bipolar transistors for low and high - frequency amplification

    電子元器件質量評估的協調體系.半導體分立器件.空白詳細規范.低頻和高頻放大用環境溫度額定雙極晶體管
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