點缺陷 的英文怎麼說

中文拼音 [diǎnquēxiàn]
點缺陷 英文
point defect
  • 點 : Ⅰ名詞1 （液體的小滴） drop （of liquid） 2 （細小的痕跡） spot; dot; speck 3 （漢字的筆畫「、」）...
  • 缺 : Ⅰ動詞1 （缺乏; 短少） be short of; lack 2 （殘缺） be missing; be incomplete 3 （該到而未到） be ...
  • 陷 : Ⅰ名詞1 （陷阱） pitfall; trap2 （缺點） defect; deficiency Ⅱ動詞1 （掉進） get stuck or bogged do...
  • 缺陷 : defect; fault; faultiness; vitium; lesion; flaw; disorder; imperfection; drawback; blemish
  1. Theory of reaction kinetics and statistical distribution of point defect of n - type metal oxide

    型金屬氧化物點缺陷的統計分佈
  2. Point defect - a crystal defect that is an impurity, such as a lattice vacancy or an interstitial atom

    點缺陷-不純凈的晶缺陷，例如格子空缺或原子空隙。
  3. The most thrilling explanation is, unfortunately, a little defectie

    很不幸，這最令人震驚的解釋有一點缺陷。
  4. The study of the structural water and the point defect related with hydrogen in eclogites from dabieshan

    大別山超高壓榴輝巖中的結構水及其氫點缺陷的研究
  5. Polarons, excitons, superconductivity, dielectric, magnetic materials, point defects, alloys

    偏振子、激子、超導、介電子、磁性材料、點缺陷、合金。
  6. The part text separate into five sections, in each section a certain study has been made respectively from value basis, systematic function, procedure feature to defect analysis. to further consummate the second instance procedure, some relevant suggestions has been raised

    正文部分分為五節，各節分別從價值基礎、制度功能、程序特點、缺陷分析上對第二審程序制度進行了一定的研究，並就進一步完善第二審程序提出了相關建議。
  7. The reason that the internal defects little occur at the center points and fissure takes an annular form during three - roll rolling was expounded based on the state of stress and strain at the center of rolled pieces

    根據軋件內部的應力應變狀態，闡述了三輥軋制軋件中心點缺陷產生可能性較小和斷裂呈環向裂紋的原因。
  8. The uniform spotting droplets were obtained by means of the controls of micro - fluid viscosity, micro - injection speed and micro - injection distance for eliminating the defects of droplet

    通過微流體粘度控制、微噴射速度和微噴射距離的控制消除樣點缺陷，獲得了均勻的點樣樣點。
  9. In this paper, the relationship of the thermal donor with point defects was investigated by injection of different concentration and distribution vacancy via 1250 ?, rtp preannealing in different gases ( n2 o2, ar ). the influence of rtf preannealing on generation at 450 ? and annihilation at 650 ? of thermal donors ( td ' s ) was not detected

    本論文通過不同氣氛（ n _ 2 ， o _ 2 ， ar ） 1250 30s高溫rtp預處理在矽片中引入不同濃度和分佈的空位，進而用四探針和擴展電阻研究450不同時間熱施主的生成特性和650熱施主的消除特性，從而確定熱施主和點缺陷之間的關系。
  10. Three parts are discussed, respective, ( 1 ) the nanostructure in the perfect of single crystal copper structure and perfect titanium structure. ( 2 ) the tensile deformation mechanism and stress analysis of the point defects effects. ( 3 ) the significance of effect as size reduced

    本論文所探討的內容可分為三部分，分別為： （ 1 ）針對完美單晶銅結構與完美鈦結構的拉伸變形研究（ 2 ）包含了空孔點缺陷的拉伸變形結構研究（ 3 ）針對尺寸縮小后所造成的表面效應影響作一探討。
  11. Firstly, the influence of point defects on the density of states and conductance for metallic carbon nanotubes is studied based on the tight - binding model

    首先，基於緊束縛模型研究了非磁性點缺陷對金屬型單壁碳納米管態密度和電導的影響。
  12. Associated point defect

    締合點缺陷
  13. Through green ’ s function method, we find that a virtual bound state is induced by a point defect

    格林函數方法計算態密度的結果表明，單個點缺陷在碳納米管中引起準束縛態。
  14. In addition, the method is applied to discuss the situation of two defects in carbon nanotubes

    態密度與電導的計算還被推廣到兩個點缺陷的情況。
  15. The electronic properties of hg _ ( 1 - x ) mn _ ( x ) te are dominated by defects, including native point defects ( vacancies, interstitials, antisites, and complexes ), extended defects ( all types of dislocations, grain boundaries, precipitates, melt spots, etc. ), and undesired impurities

    Hg _ （ 1 - x ） mn _ xte晶體的電學性能受缺陷的影響很大。晶體的缺陷主要有：原生點缺陷（空位、間隙原子、反位原子和復合體） 、擴散缺陷（各種位錯、晶界、沉澱相、低熔點相等）以及一些雜質。
  16. In this article, low temperature photoluminescence measurements have been performed on as - irradiated and postannealed n - type 6h - sic, the postannealing temperature is up to 1650 ?. three sharp lines at 478 ^ 483. 3 and 486. 1nm respectively were observed for the first time in the as - irradiated samples and argued to be due to vacancy - like induced by irradiation

    對經輻照后未退火的n型樣品的低溫光致發光實驗中，首次觀察到三條尖銳的譜線，分別位於478 . 6 、 483 . 3和486 . 1nm位置，該系列譜線可能與輻照誘生的點缺陷有關。
  17. Ok, have little blemish and can do not have a relation with mother milk

    可以啊，有一點點缺陷和可不可以母乳沒有關系的
  18. We consider that the complexes of bmon ( m, n > 1 ) or the point defects induced by heavily boron doping may be involved in the nucleation of oxygen precipitates at high temperature range of crystal cooling. therefore it is reasonably deduced that the density of voids in hb cz silicon increases and the size of voids decreases due to the reduction of vacancy concentration as a result of heavy boron - doping enhanced oxygen precipitation prior to the void formation

    在實驗事實的基礎上，我們認為在重摻硼硅單晶生長過程中， bmon （ m ， n 1 ）復合體或摻b引起的點缺陷能在晶體冷卻過程中的較高溫度階段形成，且在隨后的退火過程中能穩定存在，作為氧沉澱形核的核心，從而促進了氧沉澱，減小了大直徑硅單晶中void缺陷的尺寸，增加其密度。
  19. By studying the luminescence mechanism and the optical spectra, the two reasons for the diminish of light yield are given : the absorption of the fluorescence by the point defects when that produced and the scatter of the fluorescence by the macroscopic defects when that transmitting. in ce : yap scintillators, the available approach to improve the light yield is to diminish the self - absorption of the point defects

    通過光譜分析和對發光機制的研究，指出在產生熒光輻射過程時晶體中的點缺陷對熒光的吸收以及熒光收集過程中宏觀缺陷對熒光的散射是造成晶體光產額減小的原因，通過減小晶格缺陷是提高晶體光產額的有效途徑。
  20. Some deficiencies in law of administrative reconsideration in china and its improvement

    我國行政復議法的幾點缺陷及完善
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