a-si tft 中文意思是什麼
a-si tft
解釋
非晶硅薄膜晶體管-
Comparing to a - si tft, p - si tft has the merits such as high field effect mobility, high integration and high speed, high definition display, n channel and p channel capability, low power consumption and self - aligned structures. with these good characteristics, p - si tft lcd could provide brighter and stable image
相對于a - sitft ， poly - sitft有其明顯的優勢:高遷移率、高速高集成化、 p型和n型導電模式、自對準結構以及耗電省、解析度高等優點，能夠提供更亮、更精細的畫面。 -
Poly - crystallization silicon thin film transistor ( p - si tft ) addressing liquid crystal display has been currently the research and development focus in the field of flat panel displays, as it is most feasible approach to high resolution, high integration and low power consumption as a result of its high aperture ration. there are less number interface of the crystal grain, lower metal impurity and higher mobility in the electric current director, the milc p - si tft has been the research focus in the fields of amlcd, projection display, oled etc. there are vast dangling bonds and bug
多晶硅薄膜晶體管（ p - sitft ）液晶顯示器可以實現高解析度、高集成度、同時有效降低顯示器的功耗，因而成為目前平板顯示領域主要研究方向;而以橫向晶化多晶硅為有源層的tft由於在導電方向有更少的晶界、更低的金屬雜質污染、更高的載流子遷移率而成為目前有源矩陣液晶顯示領域、投影顯示、 oled顯示等領域研究的熱點。 -
Finally the method of preparation of p - si tft and some useful dates were given. the dissertation includes seven chapters. the first chapter introduces the development of tft ; the second chapter introduces the principle of tft and its structure ; the third chapter provides the reason of superposition capacitance between s, d and gate ; the fourth chapter introduce the deposition and test method of sinx ; the fifth chapter introduces the fabrication of p - si ; the sixth chapter studies the fabrication techniques of p - si tft and some parameters ; the seventh chapter is a conclusion of the research
本文一共分為七章:第一章介紹了本論文的研究背景、研究意義、主要工作以及國內外的研究進展;第二章介紹了tft的結構和工作原理;第三章介紹了柵極與源、漏極之間疊加電容產生的原因和自對準工藝;第四章介紹了氮化硅的制備方法和測試方法;第五章介紹了多晶硅tft有源層的制備方法並對各種晶化機理做了介紹;第六章主要對利用自對準工藝制備tft的工藝進行研究，並對制備出來的樣品進行了測試;第七章對全文進行總結。 -
With the development of display technology and the fabrication technique, high electric performance poly - si tfts were used broadly and considered as the perfect substitute for a - si tft
近年來，隨著多晶硅tft技術的不斷發展，其應用也越來越廣泛，並被視為a - sitft的理想替代品。
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